Abstract:Sulphur-doped and boron-sulphur co-doped diamond thin films were prepared by using chemical vapour deposition on p-type Si (100) and HTHP-diamond (100) substrates. The structures and properties of CVD diamond films were investigated with atom force microscope (AFM), Raman spectrum, sanning tunneling microscopy (STM) and current imaging tunneling current spectroscopy (CITS). Comparing the structures and properties of the doped diamond films grown on Si and HTHP diamond substrates, we find that the films deposited on Si substrates are composed of spherical grains with size of one hundred nanometer, the doped diamond films on Si substrates consist of large grains with a high fraction of grain boundaries due to the successive secondary nucleation,and the roughness of the films is estimated to be around 18.5nm. The doped diamond films on HTHP diamond substrates are composed of nanometer crystal grains with the sizes of 10—50nm and the film surface is flat with the roughness estimated to be around 1.8nm. Raman and resistivity measurements reveal that the films deposited on HTHP diamond substrates have much higher quality, fewer defects and lower stress, and higher conductivity than the films grown on Si substrates. Current imaging tunnelling current spectroscopy (CITS) images indicate that some grain boundaries and crystalline facets near the grain boundaries are he high electron emission regions. However, the grain boundaries and crystalline facets of the doped diamond films on HTHP diamond substrates have uniform electron emission currents, which indicates that the doped atoms are uniformly distributed in that films. The local I-V characteristics for films deposited on Si or HTHP diamond substrates indicate the n-type conduction.

Heteroepitaxial growth of smooth and continuous diamond thin films on silicon substrates via high quality silicon carbide buffer layers

Coalescence and overgrowth of diamond grains for improved heteroepitaxy on silicon (001)

Epitaxially Oriented Growth of Diamond on Silicon by Hot Filament Chemical Vapor Deposition

Oriented and textured growth of (111) diamond on silicon using hot filament chemical vapour deposition

Growth of well-adhered and smooth diamond thin films on fused silica substrates

Novel pathway to the growth of diamond on cubic beta-SiC(001)

Surface morphology and surface p-channel field effect transistor on the heteroepitaxial diamond deposited on inclined β-SiC(001) surfaces

Heteroepitaxial nucleation of diamond on Si(001) in hot filament chemical vapor deposition

A nucleation site and mechanism leading to epitaxial growth of diamond films

Approach of selective nucleation and epitaxy of diamond films on Si(100)

Highly oriented diamond (111) films synthesized by pulse bias-enhanced nucleation and epitaxial grain selection on a 3C-SiC/Si (111) substrate

Epitaxial growth of SiC on (100) Diamond

Local Heteroepitaxial Diamond Formed Directly on Silicon-Wafers and Observed by High-Resolution Electron-Microscopy

Homoepitaxial overgrowth of (111) diamond films on Au-coated and Ni-coated substrates

Characterization of homoepitaxial and heteroepitaxial diamond films grown by chemical vapor deposition

The Crystallographic Relationship of Heteroepitaxial Diamond Films on Scratched Silicon Substrates

Growth and characterization of heteroepitaxial (001) and (111) diamond on Ir/sapphire structures

Characterization of an Epitaxial-Growth Diamond Thin Film

Growth of GaN epitaxial films on polycrystalline diamond by metal-organic vapor phase epitaxy

Fast Homoepitaxial Growth of 4H-Sic Films on 4° Off-Axis Substrates in a SiH 4 -C 2 H 4 -H 2 System

45-degree rotated epitaxial nucleation of diamond on silicon using chemical vapor deposition