Abstract:Sulphur-doped and boron-sulphur co-doped diamond thin films were prepared by using chemical vapour deposition on p-type Si (100) and HTHP-diamond (100) substrates. The structures and properties of CVD diamond films were investigated with atom force microscope (AFM), Raman spectrum, sanning tunneling microscopy (STM) and current imaging tunneling current spectroscopy (CITS). Comparing the structures and properties of the doped diamond films grown on Si and HTHP diamond substrates, we find that the films deposited on Si substrates are composed of spherical grains with size of one hundred nanometer, the doped diamond films on Si substrates consist of large grains with a high fraction of grain boundaries due to the successive secondary nucleation,and the roughness of the films is estimated to be around 18.5nm. The doped diamond films on HTHP diamond substrates are composed of nanometer crystal grains with the sizes of 10—50nm and the film surface is flat with the roughness estimated to be around 1.8nm. Raman and resistivity measurements reveal that the films deposited on HTHP diamond substrates have much higher quality, fewer defects and lower stress, and higher conductivity than the films grown on Si substrates. Current imaging tunnelling current spectroscopy (CITS) images indicate that some grain boundaries and crystalline facets near the grain boundaries are he high electron emission regions. However, the grain boundaries and crystalline facets of the doped diamond films on HTHP diamond substrates have uniform electron emission currents, which indicates that the doped atoms are uniformly distributed in that films. The local I-V characteristics for films deposited on Si or HTHP diamond substrates indicate the n-type conduction.

Surface morphology and surface p-channel field effect transistor on the heteroepitaxial diamond deposited on inclined β-SiC(001) surfaces

Heteroepitaxial growth of smooth and continuous diamond thin films on silicon substrates via high quality silicon carbide buffer layers

Epitaxial growth of SiC on (100) Diamond

Scanning Tunneling Microscopy Study of Antiphase Boundaries on the (001) Surface of Homoepitaxial Diamond Films

Step-edge-guided nucleation and growth mode transition of α-Ga 2 O 3 heteroepitaxy on vicinal sapphire

Coalescence and overgrowth of diamond grains for improved heteroepitaxy on silicon (001)

Highly oriented diamond (111) films synthesized by pulse bias-enhanced nucleation and epitaxial grain selection on a 3C-SiC/Si (111) substrate

Epitaxially Oriented Growth of Diamond on Silicon by Hot Filament Chemical Vapor Deposition

Influence of substrate holder configurations on bias enhanced nucleation area for diamond heteroepitaxy: Toward wafer-scale single-crystalline diamond synthesis

Characterization of homoepitaxial and heteroepitaxial diamond films grown by chemical vapor deposition

NV-doped microstructures with preferential orientation by growth on heteroepitaxial diamond

Local Heteroepitaxial Diamond Formed Directly on Silicon-Wafers and Observed by High-Resolution Electron-Microscopy

Diamond Schottky barrier diode fabricated on high-crystalline quality misoriented heteroepitaxial (001) diamond substrate

The Crystallographic Relationship of Heteroepitaxial Diamond Films on Scratched Silicon Substrates

Diamond/Ir/SrTiO3: A material combination for improved heteroepitaxial diamond films

Study Of Antiphase Boundaries And Local 3x1 Configuration On The (001) Surface Of Homoepitaxial Diamond Films By Scanning Tunneling Microscopy

Step-edge-guided Nucleation and Growth Mode Transition of Α-Ga2o3 Heteroepitaxy on Vicinal Sapphire

45-degree rotated epitaxial nucleation of diamond on silicon using chemical vapor deposition

The effects of self-assembling off-angles on the homoepitaxial lateral outward growth of single-crystal diamond

Growth and characterization of heteroepitaxial (001) and (111) diamond on Ir/sapphire structures

Thickness Impact on the Morphology, Strain Relaxation and Defects of Diamond Heteroepitaxially Grown on Ir/Al2O3 Substrates