Abstract:A mechanistic understanding of interactions be-tween atomically thin two-dimensional (2D) transition-metal dichalcogenides (TMDs) and their growth substrates is important for achieving the unidirectional alignment of nuclei and seamless stitching of 2D TMD domains and thus 2D wafers. In this work, we conduct a cross-sectional scanning transmission electron microscopy (STEM) study to investigate the atomic-scale nucleation and early stage growth behaviors of chemical vapor deposited monolayer (ML-) MoS2 and molecular beam epitaxy ML-MoSe2 on a Au(111) substrate. Statistical analysis reveals the majority of as-grown domains, i.e., similar to 88% for MoS2 and 90% for MoSe2, nucleate on surface terraces, with the rest (i.e., similar to 12% for MoS2 and 10% for MoSe2) on surface steps. Moreover, within the latter case, step-associated nucleation, similar to 64% of them are terminated with a Mo-zigzag edge in connection with the Au surface steps, with the rest (similar to 36%) being S-zigzag edges. In conjunction with ab initio density functional theory calculations, the results confirm that van der Waals epitaxy, rather than the surface step guided epitaxy, plays deterministic roles for the realization of unidirectional ML-MoS2 (MoSe2) domains on a Au(111) substrate. In contrast, surface steps, particularly their step height, are mainly responsible for the integrity and thickness of MoS2/MoSe2 films. In detail, it is found that the lateral growth of monolayer thick MoS2/MoSe2 domains only proceeds across mono-Au-atom high surface steps (similar to 2.4 angstrom), but fail for higher ones (bi-Au atom step and higher) during the growth. Our cross-sectional STEM study also confirms the existence of considerable compressive residual strain that reaches similar to 3.0% for ML-MoS2/MoSe2 domains on Au(111). The present study aims to understand the growth mechanism of 2D TMD wafers.

Scanning Tunneling Microscopy Study of Antiphase Boundaries on the (001) Surface of Homoepitaxial Diamond Films

Study Of Antiphase Boundaries And Local 3x1 Configuration On The (001) Surface Of Homoepitaxial Diamond Films By Scanning Tunneling Microscopy

Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate

The Diamond (111) Surface Reconstruction and Epitaxial Graphene Interface

Surface morphology and surface p-channel field effect transistor on the heteroepitaxial diamond deposited on inclined β-SiC(001) surfaces

Direct imaging of boron segregation at dislocations in B:diamond heteroepitaxial films

Twin-step-related Growth Phenomena of Thick Diamond Film

Atomic observation on diamond (001) surfaces with non-contact atomic force microscopy

Local Heteroepitaxial Diamond Formed Directly on Silicon-Wafers and Observed by High-Resolution Electron-Microscopy

Characterization of an Epitaxial-Growth Diamond Thin Film

Dissociation of {1 1 1} Faces into {1 1 0} Faces in Thick Diamond Films

Surface Morphology of the Interface Junction of CVD Mosaic Single-Crystal Diamond

Growth, stress, and defects of heteroepitaxial diamond on Ir/YSZ/Si(111)

Resolving The One-Dimensional Singularity Edge States Of Bi(111) Thin Films

Morphologic Study of (100) Single-Crystal Diamond Films Epitaxially Grown by Chemical-Vapor-Deposition

Effect of Surface Termination on Electronic Structure of Nano-Crystalline Diamond Film

Epitaxial growth of SiC on (100) Diamond

The Crystallographic Relationship of Heteroepitaxial Diamond Films on Scratched Silicon Substrates

Tunable band gap of diamond twin boundaries by strain engineering

Coalescence and overgrowth of diamond grains for improved heteroepitaxy on silicon (001)

Characterization of homoepitaxial and heteroepitaxial diamond films grown by chemical vapor deposition