Abstract:Heteroepitaxy provides an effective path for the synthesis of diamond wafers.After more than 20 years of development,the diamond nucleation and growth technology on iridium substrates has enabled to prepare crystals with a maximum diameter of 3.5 inches,which opens a door to application diamond as ultimate semiconductor in the future chip industry.However,a series of problems that occur on heterogeneous substrates,such as surface nucleation,bias process window,and diamond epitaxial growth,need to overcome from the perspective of growth thermodynamics.In this study,aiming at the key issue how diamond can achieve epitaxial nucleation and growth in chemical vapor deposition atmosphere,a simulation study was carried out on the nucleation and growth process of diamond at the atomic scale based on the first-principle calculation.The results show that the adsorption of C atoms on the surface of the Ir substrate is more stable than that on the bulk phase,which indicates that diamond nucleation can only occur on the substrate surface.The number of C atoms of sp3 hybridization in the amorphous hydrogenated carbon layer increases firstly and then decreases with the increase of ion kinetic energy under ion bombardment,confirming the existence of the ion kinetic energy or bias voltage window in the high-density nucleation of diamond.The interfacial binding energy is the lowest(about-0.58 eV/C)when diamond is epitaxially grown along the Ir substrate,meaning that the interface binding energy is the decisive thermodynamic factor for the epitaxial growth.In conclusion,this study clarifies the thermodynamic mechanism of single crystal diamond epitaxial growth under the bias-assisted ion bombardment,and points out a great significant guidance for the growth of diamond and other carbon based semiconductors.

A nucleation site and mechanism leading to epitaxial growth of diamond films

45-degree rotated epitaxial nucleation of diamond on silicon using chemical vapor deposition

Epitaxial growth of SiC on (100) Diamond

Epitaxial Nucleation of Diamond Polytypes on Silicon by Direct Ion Beam Deposition

High Resolution Transmission Electron Microscopy Study Of The Initial Growth Of Diamond On Silicon

Epitaxially Oriented Growth of Diamond on Silicon by Hot Filament Chemical Vapor Deposition

STUDY OF EPITAXIAL GROWTH OF DIAMOND FILM ON HETERO-MATERIAL SUBSTRATE

Direct Local Epitaxy of Diamond on Si(100) and Surface-Roughening-induced Crystal Misorientation

Recent Progress in Hetero-Epitaxial Growth of the Single-Crystal Diamond

Heteroepitaxial nucleation of diamond on Si(001) in hot filament chemical vapor deposition

Heteroepitaxial Diamond Nucleation and Growth on Iridium: First-principle Calculation

Heteroepitaxial Growth of Single Crystal Diamond Films on Iridium: Procedure and Mechanism

High Quality Heteroepitaxial Diamond Films On Silicon: Recent Progresses

Oriented and textured growth of (111) diamond on silicon using hot filament chemical vapour deposition

Bonding Regeneration: the Driving Force of Hetero-Epitaxial Diamond Grain Coalescence on (001) Silicon

Approach of selective nucleation and epitaxy of diamond films on Si(100)

Local Heteroepitaxial Diamond Formed Directly on Silicon-Wafers and Observed by High-Resolution Electron-Microscopy

Enhanced Nucleation and Growth of Diamond Film on Si by CVD Using a Chemical Precursor

Heteroepitaxial growth of smooth and continuous diamond thin films on silicon substrates via high quality silicon carbide buffer layers

Local nucleation of diamond heteroepitaxy on Si(100) in the initial stage and the role of atomic hydrogen

Diamond Epitaxy On (001)Silicon - An Interface Investigation