Morphological Diversification of Fish as a Consequence of the Divergence of Ontogenetic Trajectories

M. V. Mina

DOI: https://doi.org/10.1023/A:1012842221732

2001-11-01

Russian Journal of Developmental Biology

Abstract:

What problem does this paper attempt to address?

[Physiopathological and clinical correlations between the digestive system and cardiac insufficiency].

G. Dogliotti,A. Allodi

Abstract:
Epitaxial growth of SiC on (100) Diamond

A. Tsai,A. Aghajamali,N. Dontschuk,B. C. Johnson,M. Usman,A. K. Schenk,M. Sear,C. I. Pakes,L. C. L. Hollenberg,J. C. McCallum,S. Rubanov,A. Tadich,N. A. Marks,A. Stacey

DOI: https://doi.org/10.48550/arXiv.2002.07314

2020-02-18

Abstract:We demonstrate locally coherent heteroepitaxial growth of silicon carbide (SiC) on diamond, a result contrary to current understanding of heterojunctions as the lattice mismatch exceeds $20\%$. High-resolution transmission electron microscopy (HRTEM) confirms the quality and atomic structure near the interface. Guided by molecular dynamics simulations, a theoretical model is proposed for the interface wherein the large lattice strain is alleviated via point dislocations in a two-dimensional plane without forming extended defects in three dimensions. The possibility of realising heterojunctions of technologically important materials such as SiC with diamond offers promising pathways for thermal management of high power electronics. At a fundamental level, the study redefines our understanding of heterostructure formation with large lattice mismatch.

Materials Science,Computational Physics
High Resolution Transmission Electron Microscopy Study Of The Initial Growth Of Diamond On Silicon

T Lin,K.P Loh,A.T.S Wee,Z.X Shen,J Lin,C.H Lai,Q.J Gao,T.J Zhang

DOI: https://doi.org/10.1016/S0925-9635(00)00303-4

IF: 3.806

2000-01-01

Diamond and Related Materials

Abstract:A polycrystalline diamond film grown by hot filament CVD was ion-milled and thinned to the diamond/silicon-substrate interface and the structures formed during the initial stages of diamond nucleation were studied by high resolution transmission electron microscopy (HRTEM). At the interface, isolated polycrystalline islands (15-35 nm) consisting primarily of mixed phase beta-SiC and nanocrystalline diamond could be observed. The beta-SiC phase occurred mainly as isolated nano-sized domains with no evidence of a larger micron-scale coalescence. In addition to co-existing with beta-SiC in the polycrystalline islands, nanocrystalline diamond was also observed to nucleate in the amorphous carbon matrix. The density of the nanocrystalline diamond in the amorphous carbon matrix was observed to be at least an order of magnitude higher than that in the polycrystalline beta-SiC phase. The total nanocrystalline diamond nucleation density was found to be several orders of magnitude higher than the growth density of the micron-sized diamond crystallites that ultimately evolved from the interface at longer growth times. (C) 2000 Elsevier Science S.A. All rights reserved.
Epitaxially Oriented Growth of Diamond on Silicon by Hot Filament Chemical Vapor Deposition

QJ Chen,LX Wang,Z Zhang,J Yang,ZD Lin

DOI: https://doi.org/10.1063/1.116451

IF: 4

1996-01-01

Applied Physics Letters

Abstract:Expitaxially oriented growth of diamond film on Si(001) was achieved using hot filament chemical vapor deposition. The epitaxial relationship between the film and the substrate was confirmed by the observation through scanning electron microscopy and high-resolution transmission electron microscopy (HRTEM) as follows: Dia(001)//Si(001) and Dia〈110〉//Si〈110〉 with a misorientation angle of 9° between Dia(001) and Si(001). This reports the HRTEM observation of the largest area of the diamond/Si interface (larger than 880 Å). It demonstrates that the intermediate β-SiC layer is unnecessary for achieving diamond epitaxy on Si. Discussion reveals that the value of the misorientation angle between Dia(001) and Si(001) is not unique and should be controlled to deposit single-crystal diamond films on Si.
Heteroepitaxial nucleation of diamond on Si(001) in hot filament chemical vapor deposition

F. Stubhan,M. Ferguson,H.-J. Füsser,R. J. Behm,H.‐J. Füsser

DOI: https://doi.org/10.1063/1.113315

IF: 4

1995-04-10

Applied Physics Letters

Abstract:Heteroepitaxial nucleation of diamond on mirror-polished Si(001) substrates was achieved in a conventional hot filament reactor. The key to this achievement was the development of a bias-enhanced nucleation process step analogous to the procedure for heteroepitaxial nucleation in microwave plasma chemical vapor deposition. The nucleation and subsequent growth of diamond were characterized by means of scanning electron microscopy, scanning tunneling microscopy, and Raman spectroscopy. Well-developed diamond (001) crystal faces are observed even for very thin (∼0.3 μm) diamond films. High-resolution scanning electron microscopy investigations of the early stage of growth revealed oriented crystallites on the substrate surface with a nucleation density of 109 cm−2.

physics, applied
Oriented and textured growth of (111) diamond on silicon using hot filament chemical vapour deposition

Qijin Chen,Yan Chen,Jie Yang,Zhangda Lin

DOI: https://doi.org/10.1016/0040-6090(95)07086-9

IF: 2.1

1996-01-01

Thin Solid Films

Abstract:A very low pressure (13 Pa), high substrate temperature and a.c. discharge for the nucleation siage have been applied. Uniformly oriented and textured growth of (111) diamond (dia) with dia(111)//Si(111) and dia<<1(1)over bar>0>//Si<<1(1)over bar>0> has been achieved on not only well polished but also scratched silicon substrates using hot filament chemical vapor deposition. A probable explanation, heteroepitaxy, was hypothesized. The as-grown diamond films were characterized by Raman spectroscopy, scanning electron microscopy, and X-ray analysis.
Approach of selective nucleation and epitaxy of diamond films on Si(100)

X. Jiang,E. Boettger,M. Paul,C.‐P. Klages

DOI: https://doi.org/10.1063/1.112030

IF: 4

1994-09-19

Applied Physics Letters

Abstract:Heteroepitaxial diamond films were selectively nucleated and grown on mirror-polished single crystalline (100) silicon by microwave plasma assisted chemical vapor deposition (MWCVD). The silicon substrates were coated by 0.5 μm thick SiO2 films patterned by a standard photolithography process. The selective nucleation was performed under a negative substrate bias condition. Results show that fine patterns of (100) oriented diamond films can be obtained with high deposition selectivity and fine-line definition. In spite of the relatively large crystal size a structure edge roughness of <0.3 μm was achieved.

physics, applied
Local Heteroepitaxial Diamond Formed Directly on Silicon-Wafers and Observed by High-Resolution Electron-Microscopy

J YANG,ZD LIN,LX WANG,S JIN,Z ZHANG

DOI: https://doi.org/10.1088/0022-3727/28/6/018

1995-01-01

Journal of Physics D Applied Physics

Abstract:Diamond films were synthesized by the hot-filament chemical vapour deposition (HFCVD) method on Si(100) substrates with surface biasing pre-treatment. Evidence has been obtained from high-resolution cross sectional electron microscopy (HREM) that the diamond films grown on Si wafers showed localized epitaxy. There is an angle of approximately 7.3 degrees between Si(100) and D(100) hetero-epitaxial crystalline planes. The same type of twins (coherent twin boundaries of type, Sigma = 3) exists on and near the interface. It is shown that the pre-treatment of the substrate is a key factor for the localized hetero-epitaxy of diamond films on Si wafers.
Enhanced Nucleation and Growth of Diamond Film on Si by CVD Using a Chemical Precursor

R. N. Tiwari,Li-Di Chang,M. Yoshimura,J. Tiwari

DOI: https://doi.org/10.1021/JP2041179

2011-07-21

Abstract:Nucleation of diamond is of great importance for its growth, and a detailed understanding of the nucleation process is, therefore, desired for many applications. The pretreatment of the substrate surface may impact the initial growth period. This study demonstrates the synthesis of diamond films by microwave plasma chemical vapor deposition on a Pt/SiO2/Si substrate. The Pt particles were deposited on the SiO2/Si surface at room temperature, whereas adamantane was seeded on the SiO2/Si surface by ultrasonic treatment. The Pt particles on the SiO2 surface behave as a catalyst, which adsorb hydrocarbons from adamantane contained plasma and give distinct features of carbon in the early stage deposition. The adamantane transforms not only in the nanodiamond phase but also in other carbon phases, which can then act as nuclei for diamond growth. These kinds of phases enhanced the diamond density at partially low temperature deposition. The presence of an oxide intermediate layer between Pt and Si prevents silic...

Materials Science,Engineering,Chemistry
Heteroepitaxial growth of smooth and continuous diamond thin films on silicon substrates via high quality silicon carbide buffer layers

H. Kawarada,T. Suesada,H. Nagasawa

DOI: https://doi.org/10.1063/1.114020

IF: 4

1995-01-30

Applied Physics Letters

Abstract:Smooth and continuous diamond films have been heteroepitaxially grown on β-type silicon carbide (β-SiC) (001) surfaces. The smooth films can be obtained in the thickness of less than 6 μm which is the smallest in heteroepitaxial diamonds. The epitaxial growth is composed of three steps; (i) Bias enhanced nucleation on β-SiC (001) grown on silicon (001), (ii) 〈001〉 fast growth mode for the selection of epitaxially oriented particles, and (iii) 〈111〉 fast growth mode for the smoothing of (001) surface. High quality silicon carbide (001) surface is effective for oriented diamond nucleation. The winnowing process of oriented particles and the surface adjustment are due to the high surface energy of diamond.

physics, applied
Growth of GaN epitaxial films on polycrystalline diamond by metal-organic vapor phase epitaxy

Quanzhong Jiang,Duncan W E Allsopp,Chris R Bowen

DOI: https://doi.org/10.1088/1361-6463/aa60a0

2017-03-16

Abstract:Heat extraction is often essential in ensuring efficient performance of semiconductor devices and requires minimising the thermal resistance between the functional semiconductor layers and any heat sink. This paper reports the epitaxial growth of N-polar GaN films on polycrystalline diamond substrates of high thermal conductivity with metal-organic vapor phase epitaxy, by using a Si x C layer formed during deposition of polycrystalline diamond on a silicon substrate. The Si x C layer acts to provide the necessary structure ordering information for the formation of a single crystal GaN film at the wafer scale. It is shown that a three-dimensional island (3D) growth process removes hexagonal defects that are induced by the non-single crystal nature of the Si x C layer. It is also shown that intensive 3D growth and the introduction of a convex curvature of the substrate can be deployed to reduce tensile stress in the GaN epitaxy to enable the growth of a crack-free layer up to a thickness of 1.1µm. The twist and tilt can be as low as 0.65° and 0.39° respectively, values broadly comparable with GaN grown on Si substrates with a similar structure.

physics, applied
The Surface Effect on the Growth of Related Color Centers in Diamond

Yu Guo,Zhuan Li,Yang Wang,Zhenni He

DOI: https://doi.org/10.1088/1757-899x/452/2/022129

2018-01-01

IOP Conference Series Materials Science and Engineering

Abstract:In this paper, the growth of SiV and NV centers in the different atomic layers of different surface in diamond is studied through first-principles calculations. It is revealed that, the formation energy of SiV and NV centers at the surface is lower than in the bulk. That is to say, SiV and NV centers are formed more easily at the surface, SiV and NV centers in the surface region is more stable than in the bulk. All these results strongly indicate that the interaction between diamond surfaces and the SiV and NV centers play a critical role during the incorporation of SiV and NV centers in the CVD process. It is the significant foundation for improving the growth of related color centers and it is very important for the formation and control of related defects in the epitaxial growth of diamond. Due to the different surface energy and property, the growth of SiV and NV centers is different on different surfaces.
NV-doped microstructures with preferential orientation by growth on heteroepitaxial diamond

Jürgen Weippert,Jan Engels,Patricia Quellmalz,Christian Giese,Tingpeng Luo,Niklas Mathes,Lukas Lindner,Jan Jeske,Peter Knittel,Lutz Kirste,Jan Kustermann,Vadim Lebedev

DOI: https://doi.org/10.1063/5.0148067

IF: 2.877

2023-06-16

Journal of Applied Physics

Abstract:For the wafer-scale fabrication of diamond devices, the growth of diamond substrates by heteroepitaxial chemical vapor deposition is the most promising option currently available. However, the transfer of growth and also structuring processes from small homoepitaxial to larger heteroepitaxial samples is not straightforward and requires adaptation. In this study, we present an approach for the fabrication of functional microstructures including pyramids and mesas as well as more complex structures with hollow centers. The associated methods were previously demonstrated by homoepitaxial growth and are now evaluated on heteroepitaxially grown diamond films. After optimizing the growth procedures to ensure a sufficient quality of the bare diamond substrates, precursor structures for overgrowth were fabricated by e-beam lithography and plasma etching. In the overgrowth of nanopillars, a truncated pyramidal shape was achieved. The characterization with scanning electron microscopy revealed the growth of higher-index facets. Nevertheless, photoluminescence spectroscopy reveals localized doping on the sides of the microstructures. In addition, optically detected magnetic resonance reaches a contrast of 6% of one preferred nitrogen vacancy orientation per facet and a transverse relaxation time T2∗ of 96 ns.

physics, applied
Nitrogen overgrowth as a catalytic mechanism during diamond chemical vapour deposition

Lachlan M. Oberg,Marietta Batzer,Alastair Stacey,Marcus W. Doherty

DOI: https://doi.org/10.48550/arXiv.2011.04921

2020-11-10

Abstract:Nitrogen is frequently included in chemical vapour deposition feed gases to accelerate diamond growth. While there is no consensus for an atomistic mechanism of this effect, existing studies have largely focused on the role of sub-surface nitrogen and nitrogen-based adsorbates. In this work, we demonstrate the catalytic effect of surface-embedded nitrogen in nucleating new layers of (100) diamond. To do so we develop a model of nitrogen overgrowth using density functional theory. Nucleation of new layers occurs through C insertion into a C--C surface dimer. However, we find that C insertion into a C--N dimer has substantially reduced energy requirements. In particular, the rate of the key dimer ring-opening and closing mechanism is increased 400-fold in the presence of nitrogen. Full incorporation of the substitutional nitrogen defect is then facilitated through charge transfer of an electron from the nitrogen lone pair to charge acceptors on the surface. This work provides a compelling mechanism for the role of surface-embedded nitrogen in enhancing (100) diamond growth through the nucleation of new layers. Furthermore, it demonstrates a pathway for substitutional nitrogen formation during chemical vapour deposition which can be extended to study the creation of technologically relevant nitrogen-based defects.

Materials Science,Applied Physics
Interfacial study of cubic boron nitride films deposited on diamond

W J Zhang,X M Meng,C Y Chan,K M Chan,Y Wu,I Bello,S T Lee

DOI: https://doi.org/10.1021/jp0517908

2005-08-25

Abstract:We have studied the nucleation and growth of cubic boron nitride (cBN) films deposited on silicon and diamond-coated silicon substrates using fluorine-assisted chemical vapor deposition (CVD). These comparative studies substantiate that the incubation amorphous/turbostratic BN layers, essential for the cBN nucleation on silicon, are not vital precursors for cBN nucleation on diamond, and they are inherently eliminated. At vastly reduced critical bias voltage, down to -10 V, cBN growth is still maintained on diamond surfaces, and cBN and underlying diamond crystallites exhibit an epitaxial relationship. However, the epitaxial growth is associated with stress in the cBN-diamond interfacial region. In addition, some twinning of crystallites and small-angle grain boundaries are observed between the cBN and diamond crystallites because of the slight lattice mismatch of 1.36%. The small-angle grain boundaries could be eliminated by imposing a little higher bias voltage during the initial growth stage. The heteroepitaxial growth of cBN films on different substrate materials are discussed in the view of lattice matching, surface-energy compatibility, and stability of the substrate against ion irradiation.
Validation of an auditory sensory reinforcement paradigm: Campbell's monkeys (Cercopithecus campbelli) do not prefer consonant over dissonant sounds.

H. Koda,Muriel Basile,Marion Olivier,Kévin Remeuf,S. Nagumo,C. Blois-Heulin,A. Lemasson

DOI: https://doi.org/10.1037/a0031237

2013-04-08

Journal of Comparative Psychology

Abstract:The central position and universality of music in human societies raises the question of its phylogenetic origin. One of the most important properties of music involves harmonic musical intervals, in response to which humans show a spontaneous preference for consonant over dissonant sounds starting from early human infancy. Comparative studies conducted with organisms at different levels of the primate lineage are needed to understand the evolutionary scenario under which this phenomenon emerged. Although previous research found no preference for consonance in a New World monkey species, the question remained opened for Old World monkeys. We used an experimental paradigm based on a sensory reinforcement procedure to test auditory preferences for consonant sounds in Campbell's monkeys (Cercopithecus campbelli campbelli), an Old World monkey species. Although a systematic preference for soft (70 dB) over loud (90 dB) control white noise was found, Campbell's monkeys showed no preference for either consonant or dissonant sounds. The preference for soft white noise validates our noninvasive experimental paradigm, which can be easily reused in any captive facility to test for auditory preferences. This would suggest that human preference for consonant sounds is not systematically shared with New and Old World monkeys. The sensitivity for harmonic musical intervals emerged probably very late in the primate lineage.
Homoepitaxial overgrowth of (111) diamond films on Au-coated and Ni-coated substrates

Kun-An Chiu,Pin-Hsun Wu,Wei-Lin Wang,Lin-Lung Wei,Jr-Sheng Tian,Chun-Yen Peng,Yue-Han Wu,Li Chang

DOI: https://doi.org/10.1016/j.surfcoat.2022.128348

IF: 4.865

2022-05-01

Surface and Coatings Technology

Abstract:Homoepitaxial growth of (111)-oriented diamond films on the Au-coated and Ni-coated diamond substrates by microwave plasma chemical vapor deposition (CVD) has been investigated. The process is involved with overgrowth of CVD diamond on Au and Ni islands formed by hydrogen plasma annealing of the 20 nm Au and Ni film coatings on diamond substrates. Cross-sectional transmission electron microscopy (TEM) observations show that both of the Au and Ni islands as single crystallites are in epitaxy with diamond substrate and no diamond growth occurs on top of those islands in the early stage of diamond deposition. The overgrowth of diamond over the metal islands results in excellent coalescence to form a continuous film with a lower defect density than the film without the metal coating. With such Au and Ni islands, the film stress can be further relaxed as shown with Raman spectroscopy.

physics, applied,materials science, coatings & films
Nucleation growth mechanism of diamond on 4H-SiC substrate by microwave plasma chemical vapor deposition

Xiufei Hu,Yan Peng,Xiwei Wang,Xiaotong Han,Bin Li,Yiqiu Yang,Mingsheng Xu,Xiangang Xu,Jisheng Han,Dufu Wang,Kuan Yew Cheong

DOI: https://doi.org/10.1016/j.mtcomm.2022.103563

IF: 3.8

2022-04-01

Materials Today Communications

Abstract:Diamond was deposited on mirror-like polished, grinded, and grooved 4H-SiC substrates by microwave plasma chemical vapor deposition. The nucleation process and grain morphology varied with different growth time and concentrations of methane in hydrogen were observed by scanning electron microscopy, X-ray diffraction and Raman spectroscopy. It was shown that the nucleation density increased by three orders of magnitude on the grinded substrate, compared with mirror-like polished substrate. The concentration of methane is critical factor that affected the nucleation density, grain size and developing facet. Furthermore, the transformation from nucleation to continuous film was revealed on side wall of the grooved substrate. And the nucleation growth mechanism of diamond on the 4H-SiC substrate was discussed, and a four-stage nucleation growth mechanism has been proposed with the formation of carbon clusters by converting from sp1 to sp2 and sp3 carbon, shaping into preferred crystal planes and forming a well-defined cubo-octahedral diamond grains before producing a compact and coalesced diamond film.

materials science, multidisciplinary
Tailoring of Nitrogen-Vacancy Colour Centers in Diamond Epilayers by in Situ Sulfur and Nitrogen Anion Engineering

L. C. Hao,Y. Shen,X. D. Yang,Y. Bian,Q. Q. Du,D. Y. Liu,W. K. Zhao,J. D. Ye,K. Tang,H. P. Wu,R. Zhang,Y. D. Zheng,S. L. Gu

DOI: https://doi.org/10.1088/1361-6463/ab5908

2019-01-01

Abstract:In this work, a sulfur and nitrogen co-doping technique has been demonstrated for diamond epilayer growth by microwave plasma chemical vapor deposition (MPCVD). Results show that the nitrogen concentration in films could be tailored by co-doping of sulfur. At a certain growth condition, single nitrogen-vacancy (NV) colour centers could be achieved. A competition mechanism between sulfur and nitrogen incorporation in the H-2/CH4 plasma is proposed to explain the efficient suppression of the incorporated nitrogen. Briefly, adding H2S decreases the growth rate and the resulting (S or S-2) species could react with the dissociated nitrogen atoms to form S and N-containing clusters. Hence, the concentration of the NV centers in diamond is decreased. Meanwhile, density functional theory (DFT) calculations indicate an increment of the NV formation energy in the presence of sulfur, which confirms that sulfur has a suppression effect on the formation of the NV centers. This study provides a new method to adjust the concentration of the NV centers in the diamond films.
Characterization of homoepitaxial and heteroepitaxial diamond films grown by chemical vapor deposition

Li Rong-Bin,

DOI: https://doi.org/10.7498/aps.58.1287

IF: 0.906

2009-01-01

Acta Physica Sinica

Abstract:Sulphur-doped and boron-sulphur co-doped diamond thin films were prepared by using chemical vapour deposition on p-type Si (100) and HTHP-diamond (100) substrates. The structures and properties of CVD diamond films were investigated with atom force microscope (AFM), Raman spectrum, sanning tunneling microscopy (STM) and current imaging tunneling current spectroscopy (CITS). Comparing the structures and properties of the doped diamond films grown on Si and HTHP diamond substrates, we find that the films deposited on Si substrates are composed of spherical grains with size of one hundred nanometer, the doped diamond films on Si substrates consist of large grains with a high fraction of grain boundaries due to the successive secondary nucleation,and the roughness of the films is estimated to be around 18.5nm. The doped diamond films on HTHP diamond substrates are composed of nanometer crystal grains with the sizes of 10—50nm and the film surface is flat with the roughness estimated to be around 1.8nm. Raman and resistivity measurements reveal that the films deposited on HTHP diamond substrates have much higher quality, fewer defects and lower stress, and higher conductivity than the films grown on Si substrates. Current imaging tunnelling current spectroscopy (CITS) images indicate that some grain boundaries and crystalline facets near the grain boundaries are he high electron emission regions. However, the grain boundaries and crystalline facets of the doped diamond films on HTHP diamond substrates have uniform electron emission currents, which indicates that the doped atoms are uniformly distributed in that films. The local I-V characteristics for films deposited on Si or HTHP diamond substrates indicate the n-type conduction.

physics, multidisciplinary

Morphological Diversification of Fish as a Consequence of the Divergence of Ontogenetic Trajectories

[Physiopathological and clinical correlations between the digestive system and cardiac insufficiency].

Epitaxial growth of SiC on (100) Diamond

High Resolution Transmission Electron Microscopy Study Of The Initial Growth Of Diamond On Silicon

Epitaxially Oriented Growth of Diamond on Silicon by Hot Filament Chemical Vapor Deposition

Heteroepitaxial nucleation of diamond on Si(001) in hot filament chemical vapor deposition

Oriented and textured growth of (111) diamond on silicon using hot filament chemical vapour deposition

Approach of selective nucleation and epitaxy of diamond films on Si(100)

Local Heteroepitaxial Diamond Formed Directly on Silicon-Wafers and Observed by High-Resolution Electron-Microscopy

Enhanced Nucleation and Growth of Diamond Film on Si by CVD Using a Chemical Precursor

Heteroepitaxial growth of smooth and continuous diamond thin films on silicon substrates via high quality silicon carbide buffer layers

Growth of GaN epitaxial films on polycrystalline diamond by metal-organic vapor phase epitaxy

The Surface Effect on the Growth of Related Color Centers in Diamond

NV-doped microstructures with preferential orientation by growth on heteroepitaxial diamond

Nitrogen overgrowth as a catalytic mechanism during diamond chemical vapour deposition

Interfacial study of cubic boron nitride films deposited on diamond

Validation of an auditory sensory reinforcement paradigm: Campbell's monkeys (Cercopithecus campbelli) do not prefer consonant over dissonant sounds.

Homoepitaxial overgrowth of (111) diamond films on Au-coated and Ni-coated substrates

Nucleation growth mechanism of diamond on 4H-SiC substrate by microwave plasma chemical vapor deposition

Tailoring of Nitrogen-Vacancy Colour Centers in Diamond Epilayers by in Situ Sulfur and Nitrogen Anion Engineering

Characterization of homoepitaxial and heteroepitaxial diamond films grown by chemical vapor deposition