Abstract:Diamond color centers have proven to be versatile quantum emitters and exquisite sensors of stress, temperature, electric and magnetic fields, and biochemical processes. Among color centers, the silicon-vacancy (SiV[Formula: see text]) defect exhibits high brightness, minimal phonon coupling, narrow optical linewidths, and high degrees of photon indistinguishability. Yet the creation of reliable and scalable SiV[Formula: see text]-based color centers has been hampered by heterogeneous emission, theorized to originate from surface imperfections, crystal lattice strain, defect symmetry, or other lattice impurities. Here, we advance high-resolution cryo-electron microscopy combined with cathodoluminescence spectroscopy and 4D scanning transmission electron microscopy (STEM) to elucidate the structural sources of heterogeneity in SiV[Formula: see text] emission from nanodiamond with sub-nanometer-scale resolution. Our diamond nanoparticles are grown directly on TEM membranes from molecular-level seedings, representing the natural formation conditions of color centers in diamond. We show that individual subcrystallites within a single nanodiamond exhibit distinct zero-phonon line (ZPL) energies and differences in brightness that can vary by 0.1 meV in energy and over 70% in brightness. These changes are correlated with the atomic-scale lattice structure. We find that ZPL blue-shifts result from tensile strain, while ZPL red shifts are due to compressive strain. We also find that distinct crystallites host distinct densities of SiV[Formula: see text] emitters and that grain boundaries impact SiV[Formula: see text] emission significantly. Finally, we interrogate nanodiamonds as small as 40 nm in diameter and show that these diamonds exhibit no spatial change to their ZPL energy. Our work provides a foundation for atomic-scale structure-emission correlation, e.g., of single atomic defects in a range of quantum and two-dimensional materials.

The Surface Effect on the Growth of Related Color Centers in Diamond

First-principles Studies of the Effect of H and F Decoration on the Growth of Silicon Vacancy on (100) Surface in Diamond

Microscopic Origin For The Orientation Dependence Of Nv Centers In Chemical-Vapor-Deposited Diamond

Nondecaying Long Range Effect of Surface Decoration on the Charge State of NV Center in Diamond.

Formation of GeV, SiV, and NV Color Centers in Single Crystal Diamond Needles Grown by Chemical Vapor Deposition

Surface and size effects on the charge state of NV center in nanodiamonds

Perfect alignment and preferential orientation of nitrogen-vacancy centers during CVD growth of diamond on (111) surfaces

Creation of color centers in diamond by recoil implantation through dielectric films

Enhanced conversion efficiency of vacancy-related color centers in diamonds grown on a patterned metal surface by chemical vapor deposition

Surface and Size Effects of Nitrogen-vacancy Centers in Diamond Nanowires

Unraveling sources of emission heterogeneity in Silicon Vacancy color centers with cryo-cathodoluminescence microscopy

Influence of (N,H)-terminated surfaces on stability, hyperfine structure, and zero-field splitting of NV centers in diamond

Characteristics of Diamond Crystals Deposited on Quartz Substrates by Chemical Vapor Deposition

Engineering quantum-coherent defects: The role of substrate miscut in chemical vapor deposition diamond growth

Impact of surface and laser-induced noise on the spectral stability of implanted nitrogen-vacancy centers in diamond

Varying temperature and silicon content in nanodiamond growth: effects on silicon-vacancy centers

Formation Mechanism of SiV in Diamond from Unintentional Silicon Doping by Microwave Plasma Chemical Vapor Deposition

Vertical-Substrate MPCVD Epitaxial Nanodiamond Growth

Towards wafer-scale diamond nano- and quantum technologies

Tailoring of Nitrogen-Vacancy Colour Centers in Diamond Epilayers by in Situ Sulfur and Nitrogen Anion Engineering