Surface and Size Effects of Nitrogen-vacancy Centers in Diamond Nanowires

Hu Wei,Liu Xiaofeng,Li Zhenyu,Yang Jinlong
DOI: https://doi.org/10.7503/cjcu20210135
2021-01-01
Abstract:To control the electronic structures and stability of nitrogen-vacancy (NV) center in diamond is crucial for their practical applications. The surface and size effects on the structural, electronic, magnetic properties and stability of NV centers doped in diamond nanowires (DNs) were systematically investigated via large-scale spin-polarized density functional theory calculations. We theoretically design several types of DNs with different surface modifications (clean, hydrogenated and fluorinated) and the diameter sizes up to hundreds of atoms. It demonstrated that the electronic structures of neutral NV0 and negative NV- centers are not affected by semiconducting surface modifications and diameter sizes of DNs, but the stability are sensitive to these two effects. Furthermore, we find that the surface modifications induce a size-independent and long-range effect on the stability of the NV- center doped in DNs due to the cylindrical surface electric dipole layer in DNs. In particular, the NV- center doped in DNs can be stabilized for n-type fluorinated diamond surfaces, while NV0 is relatively more stable for p-type hydrogenated surfaces. Therefore, surface modification provides a precise and effective way to control the electronic structures and stability of charged defects in semiconductors.
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