Surface transfer doping of hydrogen-terminated diamond probed by shallow nitrogen-vacancy centers

Taisuke Kageura,Yosuke Sasama,Keisuke Yamada,Kosuke Kimura,Shinobu Onoda,Yamaguchi Takahide

DOI: https://doi.org/10.1016/j.carbon.2024.119404

2024-08-01

Abstract:The surface conductivity of hydrogen-terminated diamond is a topic of great interest from both scientific and technological perspectives. This is primarily due to the fact that the conductivity is exceptionally high without the need for substitutional doping, thus enabling a wide range of electronic applications. Although the conductivity is commonly explained by surface transfer doping due to air-borne surface acceptors, there remains uncertainty regarding the main determining factors that govern the degree of band bending and hole density, which are crucial for the design of electronic devices. Here, we elucidate the dominant factor influencing band bending by creating shallow nitrogen-vacancy (NV) centers beneath the hydrogen-terminated diamond surface through nitrogen ion implantation at varying fluences. We measured the photoluminescence and optically detected magnetic resonance (ODMR) of the NV centers, as well as the surface conductivity, as a function of the nitrogen implantation fluence. The disappearance of the conductivity with increasing nitrogen implantation fluence coincides with the appearance of photoluminescence and ODMR signals from negatively charged NV centers. This finding indicates that band bending is not exclusively determined by the work-function difference between diamond and the surface acceptor material, but by the finite density of surface acceptors. This work emphasizes the importance of distinguishing work-function-difference-limited band bending and surface-acceptor-density-limited band bending when modeling the surface transfer doping, and provides useful insights for the development of devices based on hydrogen-terminated diamond.

Materials Science,Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The paper primarily explores the scientific issue of surface conductivity in hydrogen-terminated diamond, particularly the P-type surface conductivity achieved through the surface transfer doping mechanism. The research focuses on identifying the main factors affecting band bending, which is crucial for designing electronic devices based on this material.

Key findings of the paper include:
1. **Experimental Methods**: Researchers created shallow nitrogen-vacancy (NV) centers on the diamond surface by nitrogen ion implantation at different doses, then measured the photoluminescence (PL) and optically detected magnetic resonance (ODMR) signals of these NV centers, as well as the surface conductivity.
2. **Theoretical Simulation**: Researchers used the Schrödinger-Poisson equations to calculate band bending, considering two different boundary conditions: constant surface potential (constant ϕ(0)) and constant surface electric field (constant ϕ'(0)). The former corresponds to band bending determined by the work function difference between the surface acceptor material; the latter corresponds to band bending limited by a finite density of surface acceptors.
3. **Experimental Results and Discussion**: As the nitrogen implantation dose increased, surface conductivity gradually disappeared, while NV centers transitioned from a positive charge state (NV+) to a negative charge state (NV−). This transition coincided with the observed PL and ODMR signals, indicating that band bending is determined not only by the work function difference between the diamond and the surface acceptor material but also by the finite density of surface acceptors.
4. **Conclusion**: The study emphasizes the importance of distinguishing between band bending limited by the work function difference and band bending limited by the surface acceptor density, providing valuable insights for the development of devices based on hydrogen-terminated diamond.

In short, this paper aims to understand the key physical mechanisms affecting the surface conductivity of hydrogen-terminated diamond and provides theoretical and experimental evidence for designing electronic applications of such materials.