Abstract:Diamond has great potential applications in high-power, high-frequency semiconductor devices because of its wide band gap (5.5 eV), high thermal conductivity (22W/(cm·K)), and high carrier mobility (4500 cm2/(V·s) for electron, and 3800 cm2/(V·s) for hole). It has been widely considered as an ultimate semiconductor. From the analysis of our previous work, we find that the output current of field effect transistor based on hydrogen-terminated polycrystalline diamond is usually larger than that based on single crystal diamond, and that the preferential orientations of the polycrystalline diamond are mainly \begin{document}$ \langle 110\rangle $\end{document} and \begin{document}$ \langle 111\rangle $\end{document} shown by XRD results. Therefore, in order to further analyze the effect of surface orientation on the device performance of hydrogen-terminated diamond field effect transistor (FET), we study the devices fabricated respectively on the (110) plane and (111) plane single crystal diamond plates obtained from a single 3.5-mm-thick single crystal diamond grown by the microwave plasma chemical vapor deposition on the high-pressure high-temperature synthesized diamond substrate. Prior to processing the device, these diamond plates are characterized by atomic force microscope, Raman spectra and photoluminescence (PL) spectra. The results of Raman and PL spectra show that (110) plane and (111) plane plates originating from the same CVD single crystal diamond have no significant difference in optical property. Then the normally-on hydrogen-terminated diamond FET with a gate length of 6 μm is achieved. The device on (111) plane delivers a saturation drain current of 80.41 mA/mm at a gate voltage VGS = –4 V, which is approximately 1.4 times that of the device on (110) plane. Meanwhile, the on-resistance of the device on (111) plane is 48.51 Ω·mm, and it is only 67% of the device on (110) plane. Analyses of the capacitance-voltage show that the hole concentration of the gated device on (110) plane and (111) plane are 1.34 × 1013 cm–2 and 1.45 × 1013 cm–2, respectively, approximately at the same level. In addition, the hole density of the device on both (110) and (111) plane increase near-linearly with the increase of gate voltage from the threshold voltage to – 4 V, indicating that the control effect of the gate on the carrier in the channel is uniform. The possible reason for the higher saturation drain current as well as the lower on-resistance of the device on (111) plane is that its sheet resistance is lower.

Low dimensionality of the diamond surface conductivity

Seebeck Measurements of N-Doped Diamond Thin Film

Surface transfer doping of hydrogen-terminated diamond probed by shallow nitrogen-vacancy centers

Low-Temperature Transport Properties of Holes Introduced by Ionic Liquid Gating in Hydrogen-Terminated Diamond Surfaces

Characteristics of H-terminated Single Crystalline Diamond Field Effect Transistors

Mobility of Two-Dimensional Hole Gas in H-Terminated Diamond

Temperature dependence of two-dimensional hole gas on hydrogen-terminated diamond surface

Orientation-dependent electric transport and band filling in hole co-doped epitaxial diamond films

Analysis of the Mobility-Limiting Mechanisms of the Two-Dimensional Hole Gas on Hydrogen-Terminated Diamond

Transport Properties of the Two-Dimensional Hole Gas for H-Terminated Diamond with an Al<sub>2</sub>O<sub>3</sub> Passivation Layer

Conductivity of Dirac-like surface states in correlated honeycomb transition metal oxide Mott insulators

Two-dimensional Ambipolar Carriers of Giant Density at the Diamond/cubic-BN (111) Interfaces: Toward Complementary Logic and Quantum Applications

Origin of two-dimensional hole gas formation on Si-treated diamond surfaces: Surface energy band diagram perspective

High elastic moduli, controllable bandgap and extraordinary carrier mobility in single-layer diamond

Growth and Surface Structrue Research of Hydrogen Terminal Diamond Thin Films

Superconductivity and Metallic Behavior in Heavily Doped Bulk Single Crystal Diamond and Novel Transportation Behavior at Graphene/Diamond Heterostructure

High Conductivity Hydrogenated Boron and Silicon Co-Doped Diamond with 0.46 Ω·mm Ohmic Contact Resistance

Characteristics of Hydrogen-Terminated Single Crystalline Diamond Field Effect Transistors with Different Surface Orientations

The Microstructures of the Diamond (100) Surfaces with Different Density of Hydrogen Adsorption

Phononic and electronic features of diamond nanowires

Room temperature operational single electron transistor on the macroscopic surface of hydrogenated diamond like carbon