Abstract:Diamond is a semiconductor material with remarkable structural, thermal, and electronic properties that has garnered significant interest in the field of electronics. Although hydrogen (H) and oxygen (O) terminations are conventionally favored in transistor designs, alternative options, such as silicon (Si) and germanium (Ge), are being explored because of their resilience to harsh processing conditions during fabrication. Density-functional theory was used to examine the non-oxidized and oxidized group-IV (Si and Ge)-terminated diamond (100) surfaces. The (3 × 1) reconstructed surfaces feature an ether configuration and show relative stability compared with the bare surface. Hybrid-functional calculations of the electronic properties revealed reduced fundamental bandgaps (<1 eV) and lower negative electron affinities (NEAs) than those of H-terminated diamond surfaces, which is attributed to the introduction of unoccupied Si (Ge) states and the depletion of negative charges. Furthermore, oxidation of these surfaces enhanced the stability of the diamond surfaces but resulted in two structural configurations: ether and ketone. Oxidized ether configurations displayed insulating properties with energy gaps of ∼4.3 ± 0.3 eV, similar to H-terminated diamond (100) surfaces, whereas bridged ether configurations exhibited metallic properties. Oxidization of the metallic ketone configurations leads to the opening of relatively smaller gaps in the range of 1.1-1.7 eV. Overall, oxidation induced a shift from NEAs to positive electron affinities, except for the reverse-ordered ketone surface with an NEA of -0.94 eV, a value comparable to the H-terminated diamond (100) surfaces. In conclusion, oxidized group-IV-terminated diamond surfaces offer enhanced stability compared to H-terminated surfaces and display unique structural and electronic properties that are influenced by surface bonding.

Origin of two-dimensional hole gas formation on Si-treated diamond surfaces: Surface energy band diagram perspective

Physical Origin of Hydrogen-Adsorption-induced Metallization of the SiC Surface: N-Type Doping Via Formation of Hydrogen Bridge Bond.

Temperature dependence of two-dimensional hole gas on hydrogen-terminated diamond surface

Amorphous Diamond-Si Semiconductor Heterojunctions

Theoretical study of hydrogenated 3C–SiC(001)-(2×1) surface

Low dimensionality of the diamond surface conductivity

Topological Dirac States Beyond Π Orbitals for Silicene on SiC(0001) Surface

Two-Dimensional Electron or Hole Gas at Zno/6h-Sic Interface

Hydrogen Adsorption Induced Metallization of SiC Surface

Theoretical Investigation of the Ammonia Adsorption Process on Si(100)-2×1 Surface

The Surface Termination Effect on the Quantum Confinement and Electron Affinities of 3C-Sic Quantum Dots: A First-Principles Study

First-principles investigation of oxidized Si- and Ge-terminated diamond (100) surfaces

Formation Mechanism of SiV in Diamond from Unintentional Silicon Doping by Microwave Plasma Chemical Vapor Deposition

Investigating the energetic band diagrams of oxygen-terminated CVD grown e6 electronic grade diamond

First-principles Studies of the Effect of H and F Decoration on the Growth of Silicon Vacancy on (100) Surface in Diamond

Theoretical study of isolated dangling bonds, dangling bond wires and dangling bond clusters on H:Si(100)-(2$\times$1) surface

Hydrogen inserted into the Si(100)-2x1-H surface: A first-principles study

Surface potential pinning study for oxygen terminated IIa diamond

Metallization of the β-SiC(100) 3\times2 Surface: a DFT Investigation

Tip-induced Band Bending on Sr/Si(100)-2×3 Reconstructed Surface

Electronic Properties of Hydrogen- and Oxygen-Terminated Diamond Surfaces Exposed to the Air