Abstract:Diamond color centers have proven to be versatile quantum emitters and exquisite sensors of stress, temperature, electric and magnetic fields, and biochemical processes. Among color centers, the silicon-vacancy (SiV[Formula: see text]) defect exhibits high brightness, minimal phonon coupling, narrow optical linewidths, and high degrees of photon indistinguishability. Yet the creation of reliable and scalable SiV[Formula: see text]-based color centers has been hampered by heterogeneous emission, theorized to originate from surface imperfections, crystal lattice strain, defect symmetry, or other lattice impurities. Here, we advance high-resolution cryo-electron microscopy combined with cathodoluminescence spectroscopy and 4D scanning transmission electron microscopy (STEM) to elucidate the structural sources of heterogeneity in SiV[Formula: see text] emission from nanodiamond with sub-nanometer-scale resolution. Our diamond nanoparticles are grown directly on TEM membranes from molecular-level seedings, representing the natural formation conditions of color centers in diamond. We show that individual subcrystallites within a single nanodiamond exhibit distinct zero-phonon line (ZPL) energies and differences in brightness that can vary by 0.1 meV in energy and over 70% in brightness. These changes are correlated with the atomic-scale lattice structure. We find that ZPL blue-shifts result from tensile strain, while ZPL red shifts are due to compressive strain. We also find that distinct crystallites host distinct densities of SiV[Formula: see text] emitters and that grain boundaries impact SiV[Formula: see text] emission significantly. Finally, we interrogate nanodiamonds as small as 40 nm in diameter and show that these diamonds exhibit no spatial change to their ZPL energy. Our work provides a foundation for atomic-scale structure-emission correlation, e.g., of single atomic defects in a range of quantum and two-dimensional materials.

First-principles Studies of the Effect of H and F Decoration on the Growth of Silicon Vacancy on (100) Surface in Diamond

The Surface Effect on the Growth of Related Color Centers in Diamond

Formation Mechanism of SiV in Diamond from Unintentional Silicon Doping by Microwave Plasma Chemical Vapor Deposition

Structural and optical characterizations of nanostructured diamond films grown on Si(001) substrates

Fluorine in Silicon: Diffusion, Trapping, and Precipitation

Characteristics of Diamond Crystals Deposited on Quartz Substrates by Chemical Vapor Deposition

Growth of well-adhered and smooth diamond thin films on fused silica substrates

Growth of Diamond Thin Films with Smooth Surface and High Transmittance on Quartz Glass Substrates

Nondecaying Long Range Effect of Surface Decoration on the Charge State of NV Center in Diamond.

Large-scale Fabrication of High-Density Silicon-vacancy Centers via Helium-ion Implantation of Diamond Nucleation Surface

Atomic structure study of the initial stage of diamond deposition on cluster models for 6H-SiC(0001) surface

Enhanced conversion efficiency of vacancy-related color centers in diamonds grown on a patterned metal surface by chemical vapor deposition

Decoration of growth sector boundaries with single nitrogen vacancy centres in as-grown single crystal HPHT synthetic diamond

First-principle Study on the Influence of Common Impurities in Diamond on the Electronic Structure of Ce-related Defects

Varying temperature and silicon content in nanodiamond growth: effects on silicon-vacancy centers

Microscopic Origin For The Orientation Dependence Of Nv Centers In Chemical-Vapor-Deposited Diamond

Oriented and textured growth of (111) diamond on silicon using hot filament chemical vapour deposition

SiV0 centres in diamond: effect of isotopic substitution in carbon and silicon

Unraveling sources of emission heterogeneity in Silicon Vacancy color centers with cryo-cathodoluminescence microscopy

Creation of color centers in diamond by recoil implantation through dielectric films

Divacancy and silicon vacancy color centers in 4H-SiC fabricated by hydrogen and dual ions implantation and annealing