Microscopic Origin For The Orientation Dependence Of Nv Centers In Chemical-Vapor-Deposited Diamond

Yexin Feng,X Z Li,E G Wang,S B Zhang,Lixin Zhang

DOI: https://doi.org/10.1088/0953-8984/26/48/485004

2014-01-01

Abstract:First-principles calculation reveals that hydrogen, which is abundant in chemical vapor deposition (CVD), can significantly improve the uniformity of nitrogen-vacancy (NV) centers in diamond. It shows that the formation of NV centers can be described as a multi-step process: first, a substitutional N (N-C) is preferentially formed at the surface layer over that of either a carbon vacancy (V-C) or an in-pane nitrogen-vacancy-hydrogen (NVH) complex. Second, with the help of H, a V-C is preferentially incorporated in the newly formed topmost layer as a nearest neighbor to the N-C (now buried in the first sublayer). This NVH complex is even more stable than N-C on the same layer. Third, H protects the already formed NV centers by forming low-energy NVHX complexes. These NV centers with their axes pointing along the directions of surface C-H bonds during their incorporation explain the experimental observations by CVD growth on (1 0 0) and (1 1 0) surfaces. Based on the model, we predict that CVD growth on (1 1 1) surface could eliminate the orientation domains to significantly improve the performance of NV centers.