Abstract:Diamond color centers have proven to be versatile quantum emitters and exquisite sensors of stress, temperature, electric and magnetic fields, and biochemical processes. Among color centers, the silicon-vacancy (SiV[Formula: see text]) defect exhibits high brightness, minimal phonon coupling, narrow optical linewidths, and high degrees of photon indistinguishability. Yet the creation of reliable and scalable SiV[Formula: see text]-based color centers has been hampered by heterogeneous emission, theorized to originate from surface imperfections, crystal lattice strain, defect symmetry, or other lattice impurities. Here, we advance high-resolution cryo-electron microscopy combined with cathodoluminescence spectroscopy and 4D scanning transmission electron microscopy (STEM) to elucidate the structural sources of heterogeneity in SiV[Formula: see text] emission from nanodiamond with sub-nanometer-scale resolution. Our diamond nanoparticles are grown directly on TEM membranes from molecular-level seedings, representing the natural formation conditions of color centers in diamond. We show that individual subcrystallites within a single nanodiamond exhibit distinct zero-phonon line (ZPL) energies and differences in brightness that can vary by 0.1 meV in energy and over 70% in brightness. These changes are correlated with the atomic-scale lattice structure. We find that ZPL blue-shifts result from tensile strain, while ZPL red shifts are due to compressive strain. We also find that distinct crystallites host distinct densities of SiV[Formula: see text] emitters and that grain boundaries impact SiV[Formula: see text] emission significantly. Finally, we interrogate nanodiamonds as small as 40 nm in diameter and show that these diamonds exhibit no spatial change to their ZPL energy. Our work provides a foundation for atomic-scale structure-emission correlation, e.g., of single atomic defects in a range of quantum and two-dimensional materials.

Formation of GeV, SiV, and NV Color Centers in Single Crystal Diamond Needles Grown by Chemical Vapor Deposition

Single nitrogen vacancy centers in chemical vapor deposited diamond nanocrystals

The Surface Effect on the Growth of Related Color Centers in Diamond

Creation of color centers in diamond by recoil implantation through dielectric films

Effect of Reactive Ion Etching on the Luminescence of GeV Color Centers in CVD Diamond Nanocrystals

Growth of polycrystalline and single-crystal CVD diamonds with bright photoluminescence of Ge-V color centers using germane GeH4 as the dopant source

Enhanced conversion efficiency of vacancy-related color centers in diamonds grown on a patterned metal surface by chemical vapor deposition

CVD-growth of ultra-pure diamond, generation of NV centers by ion-implantation and their spectroscopic characterization for quantum technological applications

Vacancy–impurity centers in diamond: prospects for synthesis and applications

Perfect alignment and preferential orientation of nitrogen-vacancy centers during CVD growth of diamond on (111) surfaces

Germanium-Vacancy Single Color Centers in Diamond

25-nm diamond crystals hosting single NV color centers sorted by photon-correlation near-field microscopy

Single Color Centers Implanted in Diamond Nanostructures

Creation of nitrogen-vacancy centers in chemical vapor deposition diamond for sensing applications

Stabilizing shallow color centers in diamond created by nitrogen delta-doping using SF$_6$ plasma treatment

Optically Coherent Nitrogen-Vacancy Centers in HPHT Treated Diamonds

Fabrication of Diamond Nanoneedle Arrays Containing High‐Brightness Silicon‐Vacancy Centers

Fabrication of high-density nitrogen-vacancy (NV) center-enriched diamond particles through methyl trityl amine (C20H19N) seeding

Generation of Nitrogen-Vacancy Centers in Diamond with Ion Implantation

Unraveling sources of emission heterogeneity in Silicon Vacancy color centers with cryo-cathodoluminescence microscopy