Characterisation of CVD diamond with high concentrations of nitrogen for magnetic-field sensing applications
Andrew M Edmonds,Connor A Hart,Matthew J Turner,Pierre-Olivier Colard,Jennifer M Schloss,Kevin S Olsson,Raisa Trubko,Matthew L Markham,Adam Rathmill,Ben Horne-Smith,Wilbur Lew,Arul Manickam,Scott Bruce,Peter G Kaup,Jon C Russo,Michael J DiMario,Joseph T South,Jay T Hansen,Daniel J Twitchen,Ronald L Walsworth
DOI: https://doi.org/10.1088/2633-4356/abd88a
2021-03-19
Materials for Quantum Technology
Abstract:Abstract Ensembles of nitrogen-vacancy (NV) centres in diamond are a leading platform for practical quantum sensors. Reproducible and scalable fabrication of NV-ensembles with desired properties is crucial, as is an understanding of how those properties influence performance. This work addresses these issues by characterising nitrogen-doped diamond produced by the chemical vapour deposition (CVD) method across a range of synthesis conditions. This is shown to produce material with widely differing absorption characteristics, which is linked to the level of defects other than substitutional nitrogen (N S ) and NV. In such material, the achievable concentration of NV − ([NV − ]) is found to be influenced by the as-grown properties. At the 10–20 ppm level for [N S ], the production of CVD-grown material with strain levels sufficient not to limit achievable device sensitivity is demonstrated and a favourable product of [NV − ] and T 2 * is obtained. Additionally, reproducible properties over a batch of 23 samples from a single synthesis run are achieved, which appears promising for the scalability efforts underway in this area of research.