Abstract:Single-crystal diamond substrates presenting a high concentration of negatively charged nitrogen-vacancy centers (NV-) are on high demand for the development of optically pumped solid-state sensors such as magnetometers, thermometers or electrometers. While nitrogen impurities can be easily incorporated during crystal growth, the creation of vacancies requires further treatment. Electron irradiation and annealing is often chosen in this context, offering advantages with respect to irradiation by heavier particles that negatively affect the crystal lattice structure and consequently the NV- optical and spin properties. A thorough investigation of electron irradiation possibilities is needed to optimize the process and improve the sensitivity of NV-based sensors. In this work we examine the effect of electron irradiation in a previously unexplored regime: extremely high energy electrons, at 155 MeV. We develop a simulation model to estimate the concentration of created vacancies and experimentally demonstrate an increase of NV- concentration by more than 3 orders of magnitude following irradiation of a nitrogen-rich HPHT diamond over a very large sample volume, which translates into an important gain in sensitivity. Moreover, we discuss the impact of electron irradiation in this peculiar regime on other figures of merits relevant for NV sensing, i.e. charge state conversion efficiency and spin relaxation time. Finally, the effect of extremely high energy irradiation is compared with the more conventional low energy irradiation process, employing 200 keV electrons from a transmission electron microscope, for different substrates and irradiation fluences, evidencing sixty-fold higher yield of vacancy creation per electron at 155 MeV.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is how to efficiently generate nitrogen - vacancy (NV) centers in diamond through high - energy electron irradiation at 155 MeV, in order to improve the sensitivity of NV - center - based solid - state sensors (such as magnetometers, thermometers or electric field meters). Specifically, the research aims to: 1. **Develop new simulation tools**: To evaluate the number of vacancies generated by high - energy electrons with energy exceeding 100 MeV in diamond, thereby optimizing the irradiation parameters. 2. **Experimental verification**: Prove through experiments that 155 MeV electron irradiation can significantly increase the NV− concentration without significantly affecting the crystal structure and the optical and spin properties of NV−. 3. **Compare the effects of irradiations with different energies**: Compare 155 MeV high - energy electron irradiation with traditional low - energy (200 keV) electron irradiation and explore the influence of different - energy irradiations on the generation of NV centers. ### Key issues - **NV - center generation mechanism**: NV centers are formed by the combination of nitrogen atoms at substitutional sites and vacancies. Naturally occurring nitrogen atoms can be easily found in commercial diamond samples, but the generation of vacancies requires additional processing, usually achieved through ion or electron irradiation. - **Selection of irradiation energy**: Traditionally, low - energy electron irradiation (such as 200 keV) has been widely studied and applied, but the irradiation effect of high - energy electrons (such as 155 MeV) has not been fully explored. High - energy electrons may generate more NV centers within a larger volume, thereby improving the sensitivity of the sensor. - **Post - irradiation treatment**: The annealing process after irradiation is crucial for making vacancies move and combine with nitrogen atoms to form NV centers. The annealing temperature is usually above 600 °C to ensure the migration of vacancies. ### Research objectives - **Increase NV− concentration**: Through 155 MeV electron irradiation, the research team has successfully increased the NV− concentration by more than three orders of magnitude, reaching 0.6 ppm. - **Maintain crystal quality**: The experimental results show that high - energy irradiation has not significantly reduced the crystal quality of diamond, and the ODMR contrast and line width have not been affected either. - **Optimize irradiation parameters**: Through simulation and experimental data, the research team has determined the optimal irradiation flux and energy to achieve the highest NV - center generation efficiency. ### Application prospects This research provides a new method for the mass production of high - density NV centers, especially suitable for macroscopic - volume quantum sensing applications. Through 155 MeV electron irradiation, vacancies can be efficiently generated at a depth of more than 10 cm, thereby significantly reducing costs and improving production efficiency.

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