Abstract:Advances in applications of nitrogen-vacancy (NV) spin centers in diamond for sensing and quantum metrology depend critically on the NV fabrication methods. One such technique combines epitaxial diamond growth and electron or ion irradiation (He, C, etc.), where NVs are activated by vacancy trapping at the nitrogen donor atoms upon thermal diffusion. In this work we study the efficiency of such method by analyzing NV depth profiles created by 340keV and also 4keV He irradiation in high purity CVD and HPHT diamond crystals and subjected to sequent annealing at 950◦C and 1200◦C temperatures. This analysis is coupled with the measurement of NV density in the bulk of CVD diamonds with nitrogen doping at low-ppb and low-ppm levels, exposed to MeV electrons in a wide range of the doses. For data analysis we developed an atomistic model based on probabilistic atomic jumps in a crystal lattice, which considers competitive trapping between di-(V 2 ) or multi-vacancy defects compared to that of NVs. The efficiency of NV formation was defined as a ratio of the corresponding capture cross sections: σ NV vs. σ V 2 . Applying this model to the experimental data, the σ NV / σ V 2 ratio was estimated about 0.1-to-0.5, where the activation energy of vacancy diffusion of about 1.7 eV was evaluated by 3-D localization of individual NVsin depth profiles in a confocal microscope and sampling their spin coherence properties (T 2 ). In addition, we noted two subsidiary effects also discussed here: (i) reduction of NV density within the stopping range of the implanted He atoms after 1200◦ annealing and, (ii) partial suppression of NVs at near-surface areas visible only at low-dose electron exposures. The results of this study could be helpful to optimize the NV fabrication process reducing the density of "collateral" lattice damage.

Diamond-defect engineering of NV- centers using ion beam irradiation

Creation of NV centers in diamond under 155 MeV electron irradiation

NV centres by vacancies trapping in irradiated diamond: Experiments and modelling

Efficient fabrication of high-density ensembles of color centers via ion implantation on a hot diamond substrate

Creation of ensembles of nitrogen-vacancy centers in diamond by neutron and electron irradiation

A window into NV center kinetics via repeated annealing and spatial tracking of thousands of individual NV centers

Insight into the Nitrogen-Vacancy Center Formation in Type-Ib Diamond by Irradiation and Annealing Approach

Impact of Annealing and Nanostructuring on Properties of NV Centers Created by Different Techniques

Efficient conversion of nitrogen to nitrogen-vacancy centers in diamond particles with high-temperature electron irradiation

CVD-growth of ultra-pure diamond, generation of NV centers by ion-implantation and their spectroscopic characterization for quantum technological applications

Impacts of Nitrogen Concentration and Electron Irradiation Fluence on the Formation of Nitrogen-Vacancy Defects in Diamond

Creation, Control, and Modeling of NV Centers in Nanodiamonds

Generation of Nitrogen-Vacancy Centers in Diamond with Ion Implantation

Positron Annihilation Study For Enhanced Nitrogen-Vacancy Center Formation In Diamond By Electron Irradiation At 77 K

Hot ion implantation to create dense NV center ensembles in diamond

Enhancing the Fabrication Yield of NV Centers in Diamond by Pre-Doping Using Molecular Dynamics Simulation

Optical and spin properties of nitrogen vacancy centers formed along the tracks of high energy heavy ions

Molecular Dynamics Simulation Study of Nitrogen Vacancy Color Centers Prepared by Carbon Ion Implantation into Diamond

Hot ion implantation to create dense NV centre ensembles in diamond

Enhancement of concentration of XeV and GeV centers in nanocrystalline diamond through He+ irradiation

Towards optimized surface $δ$-profiles of nitrogen-vacancy centers activated by helium irradiation in diamond