Abstract:Advances in applications of nitrogen-vacancy (NV) spin centers in diamond for sensing and quantum metrology depend critically on the NV fabrication methods. One such technique combines epitaxial diamond growth and electron or ion irradiation (He, C, etc.), where NVs are activated by vacancy trapping at the nitrogen donor atoms upon thermal diffusion. In this work we study the efficiency of such method by analyzing NV depth profiles created by 340keV and also 4keV He irradiation in high purity CVD and HPHT diamond crystals and subjected to sequent annealing at 950◦C and 1200◦C temperatures. This analysis is coupled with the measurement of NV density in the bulk of CVD diamonds with nitrogen doping at low-ppb and low-ppm levels, exposed to MeV electrons in a wide range of the doses. For data analysis we developed an atomistic model based on probabilistic atomic jumps in a crystal lattice, which considers competitive trapping between di-(V 2 ) or multi-vacancy defects compared to that of NVs. The efficiency of NV formation was defined as a ratio of the corresponding capture cross sections: σ NV vs. σ V 2 . Applying this model to the experimental data, the σ NV / σ V 2 ratio was estimated about 0.1-to-0.5, where the activation energy of vacancy diffusion of about 1.7 eV was evaluated by 3-D localization of individual NVsin depth profiles in a confocal microscope and sampling their spin coherence properties (T 2 ). In addition, we noted two subsidiary effects also discussed here: (i) reduction of NV density within the stopping range of the implanted He atoms after 1200◦ annealing and, (ii) partial suppression of NVs at near-surface areas visible only at low-dose electron exposures. The results of this study could be helpful to optimize the NV fabrication process reducing the density of "collateral" lattice damage.

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Creation of nitrogen-vacancy centers in chemical vapor deposition diamond for sensing applications

Generation of Nitrogen-Vacancy Centers in Diamond with Ion Implantation

Creation of shallow nitrogen vacancy centers in HPHT diamond surface via catalytic etching of transition metal

Molecular Dynamics Simulation Study of Nitrogen Vacancy Color Centers Prepared by Carbon Ion Implantation into Diamond

An efficient and low-cost method to create high-density nitrogen-vacancy centers in CVD diamond for sensing applications

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Creation of NV centers in diamond under 155 MeV electron irradiation

NV centres by vacancies trapping in irradiated diamond: Experiments and modelling

Effect of Low-Damage Inductively Coupled Plasma on Shallow Nitrogen-Vacancy Centers in Diamond

Highly Coherent Nitrogen‐Vacancy Centers in Diamond via Rational High‐Pressure and High‐Temperature Synthesis and Treatment

Optical and spin properties of nitrogen vacancy centers formed along the tracks of high energy heavy ions

Detecting nitrogen-vacancy-hydrogen centers on the nanoscale using nitrogen-vacancy centers in diamond

Diamond-defect engineering of NV- centers using ion beam irradiation

Efficient Generation of Nanoscale Arrays of Nitrogen-Vacancy Centers with Long Coherence Time in Diamond

Towards optimized surface $δ$-profiles of nitrogen-vacancy centers activated by helium irradiation in diamond

Nanocone Structures Enhancing Nitrogen-Vacancy Center Emissions in Diamonds

High spatial resolution manipulation of the nitrogen vacancy center charge state in diamond

Optically Detected Magnetic Resonance of Nitrogen-Vacancy Centers in Diamond under Weak Laser Excitation