Abstract:The performance of nitrogen vacancy (NV$^{-}$) based magnetic sensors strongly depends on the stability of nitrogen vacancy centers near the diamond surface. The sensitivity of magnetic field detection is diminished as the NV$^{-}$ turns into the neutralized charge state NV$^{0}$. We investigate the neutralization of NV$^{-}$ and calculate the ratio of NV$^{0}$ to total NV (NV$^{-}$+NV$^{0}$) caused by a hydrogen terminated diamond with a surface water layer. We find that NV$^{-}$ neutralization exhibits two distinct regions: near the surface, where the NV$^{-}$ is completely neutralized, and in the bulk, where the\ neutralization ratio is inversely proportional to depth following the electrostatic force law. In addition, small changes in concentration can lead to large differences in neutralization behavior. This phenomenon allows one to carefully control the concentration to decrease the NV$^{-}$ neutralization. The presence of nitrogen dopant greatly reduces NV$^{-}$ neutralization as the nitrogen ionizes in preference to NV$^{-}$ neutralization at the same depth. The water layer pH also affects neutralization. If the pH is very low due to cleaning agent residue, then we see a change in the band bending and the reduction of the $2$-dimensional hole gas (DHG) region. Finally, we find that dissolved carbon dioxide resulting from direct contact with the atmosphere at room temperature hardly affects the NV$^{-}$ neutralization.

Nondecaying Long Range Effect of Surface Decoration on the Charge State of NV Center in Diamond.

Surface and size effects on the charge state of NV center in nanodiamonds

Surface and Size Effects of Nitrogen-vacancy Centers in Diamond Nanowires

Influence of (N,H)-terminated surfaces on stability, hyperfine structure, and zero-field splitting of NV centers in diamond

The Surface Effect on the Growth of Related Color Centers in Diamond

Stability of near surface nitrogen vacancy centers using dielectric surface passivation

Effect of fluorinated diamond surface on charge state of nitrogen-vacancy centers

Impact of surface and laser-induced noise on the spectral stability of implanted nitrogen-vacancy centers in diamond

Stability of Near-Surface Nitrogen Vacancy Centers Using Dielectric Surface Passivation

Surface-induced charge state conversion of nitrogen-vacancy defects in nanodiamonds

Stability and electronic structure of NV centers at dislocation cores in diamond

Identifying and mitigating charge instabilities in shallow diamond nitrogen-vacancy centers

Surface effects on nitrogen vacancy centers neutralization in diamond

Depth dependent decoherence caused by surface and external spins for NV centers in diamond

The bulk conversion depth of the NV-center in diamond: computing a charged defect in a neutral slab

First-principles Studies of the Effect of H and F Decoration on the Growth of Silicon Vacancy on (100) Surface in Diamond

Microscopic Origin For The Orientation Dependence Of Nv Centers In Chemical-Vapor-Deposited Diamond

Enhanced quantum properties of shallow diamond atomic defects through nitrogen surface termination

Influence of extended defects on the formation energy, the hyperfine structure, and the zero-field splitting of NV centers in diamond

Computing Using Shallow NV-Center Charges in Diamond

Charge-State Stability of Color Centers in Wide-Bandgap Semiconductors