Abstract:Advances in applications of nitrogen-vacancy (NV) spin centers in diamond for sensing and quantum metrology depend critically on the NV fabrication methods. One such technique combines epitaxial diamond growth and electron or ion irradiation (He, C, etc.), where NVs are activated by vacancy trapping at the nitrogen donor atoms upon thermal diffusion. In this work we study the efficiency of such method by analyzing NV depth profiles created by 340keV and also 4keV He irradiation in high purity CVD and HPHT diamond crystals and subjected to sequent annealing at 950◦C and 1200◦C temperatures. This analysis is coupled with the measurement of NV density in the bulk of CVD diamonds with nitrogen doping at low-ppb and low-ppm levels, exposed to MeV electrons in a wide range of the doses. For data analysis we developed an atomistic model based on probabilistic atomic jumps in a crystal lattice, which considers competitive trapping between di-(V 2 ) or multi-vacancy defects compared to that of NVs. The efficiency of NV formation was defined as a ratio of the corresponding capture cross sections: σ NV vs. σ V 2 . Applying this model to the experimental data, the σ NV / σ V 2 ratio was estimated about 0.1-to-0.5, where the activation energy of vacancy diffusion of about 1.7 eV was evaluated by 3-D localization of individual NVsin depth profiles in a confocal microscope and sampling their spin coherence properties (T 2 ). In addition, we noted two subsidiary effects also discussed here: (i) reduction of NV density within the stopping range of the implanted He atoms after 1200◦ annealing and, (ii) partial suppression of NVs at near-surface areas visible only at low-dose electron exposures. The results of this study could be helpful to optimize the NV fabrication process reducing the density of "collateral" lattice damage.

Stability of near surface nitrogen vacancy centers using dielectric surface passivation

Stability of Near-Surface Nitrogen Vacancy Centers Using Dielectric Surface Passivation

Impact of surface and laser-induced noise on the spectral stability of implanted nitrogen-vacancy centers in diamond

Surface effects on nitrogen vacancy centers neutralization in diamond

Controlled Surface Modification to Revive Shallow NV- Centers

Enhanced quantum properties of shallow diamond atomic defects through nitrogen surface termination

Effect of Low-Damage Inductively Coupled Plasma on Shallow Nitrogen-Vacancy Centers in Diamond

Mitigation of Nitrogen Vacancy Ionization from Material Integration for Quantum Sensing

Subsurface nitrogen bonding, thermal stability, and retention of 200 eV N 2 + implanted polycrystalline diamond studied by in situ X-ray photoelectron spectroscopy

Towards optimized surface $δ$-profiles of nitrogen-vacancy centers activated by helium irradiation in diamond

Influence of (N,H)-terminated surfaces on stability, hyperfine structure, and zero-field splitting of NV centers in diamond

Creation of NV centers in diamond under 155 MeV electron irradiation

Nitrogen-Vacancy Centers in Diamond: Nanoscale Sensors for Physics and Biology

Effect of Low-Damage Inductively Coupled Plasma on Shallow NV Centers in Diamond

Depth profiling of microwave nitrogen-terminated polycrystalline diamond surfaces by energy-dependent X-ray photoelectron spectroscopy

Nondecaying Long Range Effect of Surface Decoration on the Charge State of NV Center in Diamond.

Creation of nitrogen-vacancy centers in chemical vapor deposition diamond for sensing applications

NV centres by vacancies trapping in irradiated diamond: Experiments and modelling

Selective measurement of charge dynamics in an ensemble of nitrogen-vacancy centers in nano- and bulk diamonds

An efficient and low-cost method to create high-density nitrogen-vacancy centers in CVD diamond for sensing applications

Characterisation of CVD diamond with high concentrations of nitrogen for magnetic-field sensing applications