Abstract:Nitrogen-vacancy (NV) and silicon-vacancy (SiV) color defects in diamond are promising systems for applications in quantum technology. The NV and SiV centers have multiple charge states, and their charge states have different electronic, optical and spin properties. For the NV centers, most investigations for quantum sensing applications are targeted on the negatively charged NV (NV$^{-}$), and it is important for the NV centers to be in the NV$^{-}$ state. However, it is known that the NV centers are converted to the neutrally charged state (NV$^{0}$) under laser excitation. An energetically favorable charge state for the NV and SiV centers depends on their local environments. It is essential to understand and control the charge state dynamics for their quantum applications. In this work, we discuss the charge state dynamics of NV and SiV centers under high-voltage nanosecond pulse discharges. The NV and SiV centers coexist in the diamond crystal. The high-voltage pulses enable manipulating the charge states efficiently. These voltage-induced changes in charge states are probed by their photoluminescence spectral analysis. The analysis result from the present experiment shows that the high-voltage nanosecond pulses cause shifts of the chemical potential and can convert the charge states of NV and SiV centers with the transition rates of $\sim$ MHz. This result also indicates that the major population of the SiV centers in the sample is the doubly negatively charged state (SiV$^{2-}$), which is often overlooked because of its non-fluorescent and non-magnetic nature. This demonstration paves a path for a method of rapid manipulation of the NV and SiV charge states in the future.

Charge-State Stability of Color Centers in Wide-Bandgap Semiconductors

Computing Using Shallow NV-Center Charges in Diamond

Identifying and mitigating charge instabilities in shallow diamond nitrogen-vacancy centers

Wavelength dependence of nitrogen-vacancy center charge cycling

Probing NV and SiV charge state dynamics using high-voltage nanosecond pulse and photoluminescence spectral analysis

Semiempirical $\textit{ab initio}$ modeling of bound states of deep defects in semiconductor quantum technologies

Group III Quantum Defects in Diamond are Stable Spin-1 Color Centers

Accurate and convergent energetics of color centers by wavefunction theory

Rapid, in-situ neutralization of nitrogen- and silicon-vacancy centers in diamond using above-band-gap optical excitation

A theoretical study of de-charging excitations of the NV-center in diamond involving a nitrogen donor

Dopant-assisted stabilization of negatively charged single nitrogen-vacancy centers in phosphorus-doped diamond at low temperatures

Nondecaying Long Range Effect of Surface Decoration on the Charge State of NV Center in Diamond.

Imaging dark charge emitters in diamond via carrier-to-photon conversion

Charge and Spin Dynamics and Destabilization of Shallow Nitrogen-Vacancy Centers under UV and Blue Excitation

Probing metastable space-charge potentials in a wide bandgap semiconductor

Electrical Charge State Manipulation of Single Silicon Vacancies in a Silicon Carbide Quantum Optoelectronic Device

How carbon vacancies can affect the properties of group IV color centers in diamond: A study of thermodynamics and kinetics

Probing Metastable Space-Charge Potentials in a Wide Band Gap Semiconductor

Modeling temperature-dependent population dynamics in the excited state of the nitrogen-vacancy center in diamond

Theoretical Investigation of Charge Transfer Between Two Defects in a Wide-Bandgap Semiconductor

Charge state dynamics of the nitrogen vacancy center in diamond under 1064 nm laser excitation