Abstract:A quantitative description of the excited electronic states of point defects and impurities is crucial for understanding materials properties, and possible applications of defects in quantum technologies. This is a considerable challenge for computational methods, since Kohn-Sham density functional theory (DFT) is inherently a ground-state theory, while higher-level methods are often too computationally expensive for defect systems. Recently, embedding approaches have been applied that treat defect states with many-body methods, while using DFT to describe the bulk host material. We implement such an embedding method, based on Wannierization of defect orbitals and the constrained random-phase approximation approach, and perform systematic characterization of the method for three distinct systems with current technological relevance: a carbon dimer replacing a B and N pair in bulk hexagonal BN ( CBCN ), the negatively charged nitrogen-vacancy center in diamond ( NV− ), and an Fe impurity on the Al site in wurtzite AlN ( FeAl ). In the context of these test-case defects, we demonstrate that crucial considerations of the methodology include convergence of the bulk screening of the active-space Coulomb interaction, the choice of exchange-correlation functional for the initial DFT calculation, and the treatment of the "double-counting" correction. For CBCN we show that the embedding approach gives many-body states in agreement with analytical results on the Hubbard dimer model, which allows us to elucidate the effects of the DFT functional and double-counting correction. For the NV− center, our method demonstrates good quantitative agreement with experiments for the zero-phonon line of the triplet-triplet transition. Finally, we illustrate challenges associated with this method for determining the energies and orderings of the complex spin multiplets in FeAl . https://doi.org/10.1103/PhysRevB.105.235104 ©2022 American Physical Society

Semiempirical $\textit{ab initio}$ modeling of bound states of deep defects in semiconductor quantum technologies

Theoretical Investigation of Charge Transfer Between Two Defects in a Wide-Bandgap Semiconductor

A realistic dimension-independent approach for charged defect calculations in semiconductors

First-principles Engineering of Charged Defects for Two-dimensional Quantum Technologies

Electronic excitations of the charged nitrogen-vacancy center in diamond obtained using time-independent variational density functional calculations

Identifying and mitigating charge instabilities in shallow diamond nitrogen-vacancy centers

Quantum Spin Probe of Single Charge Dynamics

Quantum Monte Carlo Techniques and Defects in Semiconductors

Vibrational and vibronic structure of isolated point defects: The nitrogen-vacancy center in diamond

Quantum embedding methods for correlated excited states of point defects: Case studies and challenges

Ab initio modelling of quantum dot qubits: Coupling, gate dynamics and robustness versus charge noise

Excited state properties of point defects in semiconductors and insulators investigated with time-dependent density functional theory

To define nonradiative defects in semiconductors: An accurate DLTS simulation based on first-principle

Atomic and electronic structure of defects in hBN: enhancing single-defect functionalities

Charge-State Stability of Color Centers in Wide-Bandgap Semiconductors

Quantum electrometry of non-volatile space charges in diamond

Accurate and convergent energetics of color centers by wavefunction theory

Computing Using Shallow NV-Center Charges in Diamond

Simulating optically-active spin defects with a quantum computer

Calculation of the energies of the multideterminant states of the nitrogen vacancy center in diamond with quantum Monte Carlo