Abstract:Electrical currents flowing inside diamond are detected in three dimensions using the charge state of nitrogen‐vacancy (NV) defects, which act as a trip‐wire detector for hole current. Time‐resolved imaging and direct measurement of photocurrent is combined with optical engineering of nitrogen impurities to reveal the complex dynamics of charge transport in a wide‐bandgap semiconductor. Establishing connections between material impurities and charge transport properties in emerging electronic and quantum materials, such as wide‐bandgap semiconductors, demands new diagnostic methods tailored to these unique systems. Many such materials host optically‐active defect centers which offer a powerful in situ characterization system, but one that typically relies on the weak spin‐electric field coupling to measure electronic phenomena. In this work, charge‐state sensitive optical microscopy is combined with photoelectric detection of an array of nitrogen‐vacancy (NV) centers to directly image the flow of charge carriers inside a diamond optoelectronic device, in 3D and with temporal resolution. Optical control is used to change the charge state of background impurities inside the diamond on‐demand, resulting in drastically different current flow such as filamentary channels nucleating from specific, defective regions of the device. Conducting channels that control carrier flow, key steps toward optically reconfigurable, wide‐bandgap optoelectronics are then engineered using light. This work might be extended to probe other wide‐bandgap semiconductors (SiC, GaN) relevant to present and emerging electronic and quantum technologies.

Quantum electrometry of non-volatile space charges in diamond

Quantum spin probe of single charge dynamics

Probing the Evolution of the Electron Spin Wave Function of the Nitrogen-Vacancy Center in Diamond via Pressure Tuning

Spin-to-Charge conversion with electrode confinement in diamond

Guiding Diamond Spin Qubit Growth with Computational Methods

Identifying and mitigating charge instabilities in shallow diamond nitrogen-vacancy centers

Quantum Sensing of Spin Fluctuations of Magnetic Insulator Films with Perpendicular Anisotropy

Mapping the local spatial charge in defective diamond by means of NV sensors - A "self-diagnostic" concept

Decoherence imaging of spin ensembles using a scanning single-electron spin in diamond

Single-Shot Readout and Weak Measurement of a Tin-Vacancy Qubit in Diamond

The Role of Electrolytes in the Relaxation of Near-Surface Spin Defects in Diamond

Quantum Vibronic Effects on the Excitation Energies of the Nitrogen-Vacancy Center in Diamond

Spatial mapping of band bending in semiconductor devices using in-situ quantum sensors

Quantum Electrometer for Time-Resolved Material Science at the Atomic Lattice Scale

Quantum computing with defects

Selective measurement of charge dynamics in an ensemble of nitrogen-vacancy centers in nano- and bulk diamonds

3D‐Mapping and Manipulation of Photocurrent in an Optoelectronic Diamond Device

Quantum Logic Readout And Cooling Of A Single Dark Electron Spin

Lifetime-Limited and Tunable Emission from Charge-Stabilized Nickel Vacancy Centers in Diamond

Electrical Control of Coherent Spin Rotation of a Single-Spin Qubit