Spatial mapping of band bending in semiconductor devices using in-situ quantum sensors

D. A. Broadway,N. Dontschuk,A. Tsai,S. E. Lillie,C. T.-K. Lew,J. C. McCallum,B. C. Johnson,M. W. Doherty,A. Stacey,L. C. L. Hollenberg,J.-P. Tetienne

DOI: https://doi.org/10.1038/s41928-018-0130-0

2018-09-13

Abstract:Band bending is a central concept in solid-state physics that arises from local variations in charge distribution especially near semiconductor interfaces and surfaces. Its precision measurement is vital in a variety of contexts from the optimisation of field effect transistors to the engineering of qubit devices with enhanced stability and coherence. Existing methods are surface sensitive and are unable to probe band bending at depth from surface or bulk charges related to crystal defects. Here we propose an in-situ method for probing band bending in a semiconductor device by imaging an array of atomic-sized quantum sensing defects to report on the local electric field. We implement the concept using the nitrogen-vacancy centre in diamond, and map the electric field at different depths under various surface terminations. We then fabricate a two-terminal device based on the conductive two-dimensional hole gas formed at a hydrogen-terminated diamond surface, and observe an unexpected spatial modulation of the electric field attributed to a complex interplay between charge injection and photo-ionisation effects. Our method opens the way to three-dimensional mapping of band bending in diamond and other semiconductors hosting suitable quantum sensors, combined with simultaneous imaging of charge transport in complex operating devices.

Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is how to accurately measure the spatial distribution of band bending in semiconductor devices. Specifically, existing methods are usually only able to detect the band bending near the surface and are unable to penetrate into the interior of the material or detect charge effects related to crystal defects. Therefore, this paper proposes a new method based on in - situ quantum sensors, using the distribution of nitrogen - vacancy (NV) centers in diamond to image the local electric field, thereby achieving three - dimensional spatial mapping of band bending.

### Main problems and solutions

1. **Limitations of existing methods**:
- Existing methods mainly rely on surface - sensitive techniques and cannot detect band bending in the depth direction.
- For the charge distribution inside complex structures and devices, especially the charge distribution caused by crystal defects, traditional methods are powerless.

2. **Proposed new method**:
- Use nitrogen - vacancy (NV) centers as in - situ quantum sensors. These NV centers can form atomic - level defects in diamond for sensing the local electric field.
- By implanting nitrogen ions at different depths to form uniformly distributed NV centers, three - dimensional spatial mapping of band bending is achieved.
- Use optically detected magnetic resonance (ODMR) spectroscopy to measure the resonance frequency change of NV centers, and then deduce the electric field strength.

3. **Specific applications**:
- This method can be applied in fields such as optimizing field - effect transistors and improving the stability and coherence of qubit devices.
- By comparing hydrogen - terminated and oxygen - terminated diamond surfaces, the influence of different surface treatments on band bending is demonstrated.
- In a two - terminal device, the electric field modulation caused by charge injection and photo - ionization effects is observed, further verifying the effectiveness of this method.

### Explanation of mathematical formulas

The relationship between band bending and the electric field can be expressed by the following formula:

\[
\vec{E}(\vec{r})=\frac{1}{q}\nabla E_V(\vec{r})
\]

where:
- \(\vec{E}(\vec{r})\) is the electric field at position \(\vec{r}\),
- \(E_V(\vec{r})\) is the energy of the valence band top relative to the Fermi level,
- \(q\) is the electron charge.

For the electric field component \(E_z(z)\) perpendicular to the surface, its expression is:

\[
E_z(z)=\frac{1}{q}\frac{dE_V}{dz}
\]

Through this method, researchers can accurately measure the electric field at different depths and draw the spatial distribution map of band bending. This provides new tools and perspectives for understanding the charge distribution in semiconductor materials and its influence on device performance.