Three-dimensional imaging of integrated-circuit activity using quantum defects in diamond

Marwa Garsi,Rainer Stöhr,Andrej Denisenko,Farida Shagieva,Nils Trautmann,Ulrich Vogl,Badou Sene,Florian Kaiser,Andrea Zappe,Rolf Reuter,Jörg Wrachtrup
DOI: https://doi.org/10.1103/PhysRevApplied.21.014055
2024-06-12
Abstract:The continuous scaling of semiconductor-based technologies to micron and sub-micron regimes has resulted in higher device density and lower power dissipation. Many physical phenomena such as self-heating or current leakage become significant at such scales, and mapping current densities to reveal these features is decisive for the development of modern electronics. However, advanced non-invasive technologies either offer low sensitivity or poor spatial resolution and are limited to two-dimensional spatial mapping. Here we use near-surface nitrogen-vacancy centres in diamond to probe Oersted fields created by current flowing within a multi-layered integrated circuit in pre-development. We show the reconstruction of the three-dimensional components of the current density with a magnitude down to about $\approx 10 \,\rm \mu A / \mu m^2$ and sub-micron spatial resolution at room temperature. We also report the localisation of currents in different layers and observe anomalous current flow in an electronic chip. Our method provides, therefore a decisive step toward three-dimensional current mapping in technologically relevant nanoscale electronics chips.
Applied Physics,Mesoscale and Nanoscale Physics,Quantum Physics
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