Abstract:Nitrogen-vacancy (NV) and silicon-vacancy (SiV) color defects in diamond are promising systems for applications in quantum technology. The NV and SiV centers have multiple charge states, and their charge states have different electronic, optical and spin properties. For the NV centers, most investigations for quantum sensing applications are targeted on the negatively charged NV (NV$^{-}$), and it is important for the NV centers to be in the NV$^{-}$ state. However, it is known that the NV centers are converted to the neutrally charged state (NV$^{0}$) under laser excitation. An energetically favorable charge state for the NV and SiV centers depends on their local environments. It is essential to understand and control the charge state dynamics for their quantum applications. In this work, we discuss the charge state dynamics of NV and SiV centers under high-voltage nanosecond pulse discharges. The NV and SiV centers coexist in the diamond crystal. The high-voltage pulses enable manipulating the charge states efficiently. These voltage-induced changes in charge states are probed by their photoluminescence spectral analysis. The analysis result from the present experiment shows that the high-voltage nanosecond pulses cause shifts of the chemical potential and can convert the charge states of NV and SiV centers with the transition rates of $\sim$ MHz. This result also indicates that the major population of the SiV centers in the sample is the doubly negatively charged state (SiV$^{2-}$), which is often overlooked because of its non-fluorescent and non-magnetic nature. This demonstration paves a path for a method of rapid manipulation of the NV and SiV charge states in the future.

Probing Metastable Space-Charge Potentials in a Wide Band Gap Semiconductor

Probing metastable space-charge potentials in a wide bandgap semiconductor

Theoretical Investigation of Charge Transfer Between Two Defects in a Wide-Bandgap Semiconductor

Probing dynamic behavior of electric fields and band diagrams in complex semiconductor heterostructures

Quantum electrometry of non-volatile space charges in diamond

Semiempirical $\textit{ab initio}$ modeling of bound states of deep defects in semiconductor quantum technologies

Charge-State Stability of Color Centers in Wide-Bandgap Semiconductors

3D-mapping and manipulation of photocurrent in an optoelectronic diamond device

Imaging dark charge emitters in diamond via carrier-to-photon conversion

Identifying and mitigating charge instabilities in shallow diamond nitrogen-vacancy centers

Quantum spin probe of single charge dynamics

Electrical Charge State Manipulation of Single Silicon Vacancies in a Silicon Carbide Quantum Optoelectronic Device

Spatial mapping of band bending in semiconductor devices using in-situ quantum sensors

Three-dimensional charge transport mapping by two-photon absorption edge transient-current technique in synthetic single-crystalline diamond

Computing Using Shallow NV-Center Charges in Diamond

Manipulating solid-state spin concentration through charge transport

Probing NV and SiV charge state dynamics using high-voltage nanosecond pulse and photoluminescence spectral analysis

Detection and modeling of hole capture by single point defects under variable electric fields

Optical Writing and Electro-Optic Imaging of Reversible Space Charges in Semi-Insulating CdTe Diodes

High spatial resolution charge sensing of quantum Hall states

Quantum enhanced electric field mapping within semiconductor devices