Abstract:Despite a large bandgap of 5.5 eV, charge carriers in diamonds can be excited by visible light thanks to the presence of surface states. These transitions are identified by combining X‐ray and UV–Vis spectroscopic techniques, bringing a new understanding of the sub‐bandgap photocurrent observed with diamond electrodes, which could enable to visible light‐driven photo(electro)chemical CO2 and N2 reduction reactions. Solvated electrons are highly reductive chemical species whose chemical properties remain largely unknown. Diamond materials are proposed as a promising emitter of solvated electrons and visible light excitation would enable solar‐driven CO2 or N2 reductions reactions in aqueous medium. But sub‐bandgap excitation remains challenging. In this work, the role of surface states on diamond materials for charge separation and emission in both gaseous and aqueous environments from deep UV to visible light excitation is elucidated. Four different X‐ray and UV–vis spectroscopy methods are applied to diamond materials with different surface termination, doping and crystallinity. Surface states are found to dominate sub‐bandgap charge transfer. However, the surface charge separation is drastically reduced for boron‐doped diamond due to a very high density of bulk defects. In a gaseous atmosphere, the oxidized diamond surface maintains a negative electron affinity, allowing charge emission, due to remaining hydrogenated and hydroxylated groups. In an aqueous electrolyte, a photocurrent for illumination down to 3.5 eV is observed for boron‐doped nanostructured diamond, independent of the surface termination. This study opens new perspectives on photo‐induced interfacial charge transfer processes from metal‐free semiconductors such as diamonds.

Three-dimensional charge transport mapping by two-photon absorption edge transient-current technique in synthetic single-crystalline diamond

3D-mapping and manipulation of photocurrent in an optoelectronic diamond device

3D‐Mapping and Manipulation of Photocurrent in an Optoelectronic Diamond Device

Three-dimensional imaging of integrated-circuit activity using quantum defects in diamond

Numerical Parameterization of Chemical-Vapor-Deposited (CVD) Single-Crystal Diamond for Device Simulation and Analysis

Imaging dark charge emitters in diamond via carrier-to-photon conversion

Probing metastable space-charge potentials in a wide bandgap semiconductor

A multi-electrode two-dimensional position sensitive diamond detector

Spatial mapping of band bending in semiconductor devices using in-situ quantum sensors

Mapping the local spatial charge in defective diamond by means of NV sensors - A "self-diagnostic" concept

Surface‐Mediated Charge Transfer of Photogenerated Carriers in Diamond

Probing Metastable Space-Charge Potentials in a Wide Band Gap Semiconductor

Electrically stimulated optical spectroscopy of interface defects in wide-bandgap field-effect transistors

Sub-diffraction optical manipulation of the chargestate of nitrogen vacancy center in diamond

Giant photon-drag-induced ultrafast photocurrent in diamond for nonlinear photonics

Theoretical Investigation of Charge Transfer Between Two Defects in a Wide-Bandgap Semiconductor

Electron-induced state conversion in diamond NV centers measured with pump-probe cathodoluminescence spectroscopy

Computing Using Shallow NV-Center Charges in Diamond

Subdiffraction optical manipulation of the charge state of nitrogen vacancy center in diamond