Abstract:In this work, first-principle calculations within Density Functional Theory (DFT) were performed to study the structural, electronic, and optical properties of eight different bilayer van der Waals (vdW) heterostructures composed of SiGe and AsSb monolayers. These heterobilayers exhibit large energy bandgap (90 meV–459 meV) with linear energy–momentum relationship, implying high charge carrier mobility. Application of external vertical electric field can effectively modulate the energy bandgap of these heterobilayers from 64 meV to 459 meV, depending on stacking orders. Our study shows that a moderate amount of electric field can almost linearly tune the energy bandgap, however, semiconductor to metal transition occurs beyond a certain limit. The mechanism of energy bandgap tuning by the external electric field was examined by studying differential charge density. The optical properties such as complex dielectric function, electron energy loss function, complex refractive index, reflectivity, absorption coefficient, and optical conductivity of these SiGe/AsSb heterobilayers are studied for parallelly and perpendicularly polarized incident light. Our research demonstrates that these heterostructures exhibit variable plasma frequency depending on the stacking order of the heterostructures, anisotropic reflectivity i.e., birefringence properties in response to the incident light's polarization. Also, they exhibit high refractive indices (∼3) and absorption coefficients (∼10 5 cm −1 ) from visible to ultraviolet incident light frequencies. Our study proposes several SiGe/AsSb heterobilayers with unique electronic and optical properties which may have potential applications in nanoscale electronic and optoelectronic applications.

Probing dynamic behavior of electric fields and band diagrams in complex semiconductor heterostructures

Contactless method to measure 2DEG charge density and band structure in high electron mobility transistor structures

Electric field mapping of wide-bandgap semiconductor devices at a submicrometre resolution

Quantum Time-Dependent Monte Carlo Simulation of Electron Devices with 2D Linear-Band Materials: a Genuine TeraHertz Signature for Graphene

Probing Semiconductor Band Structures and Heterojunction Interface Properties with Ballistic Carrier Emission: Gaas/Alxga1-Xas As A Model System

Electron and Hole Photoemission Detection for Band Offset Determination of Tunnel Field-Effect Transistor Heterojunctions

Probing Metastable Space-Charge Potentials in a Wide Band Gap Semiconductor

Bandgap engineering of two-dimensional semiconductor materials

Probing metastable space-charge potentials in a wide bandgap semiconductor

Electrically stimulated optical spectroscopy of interface defects in wide-bandgap field-effect transistors

Bandgap and Band Offsets Determination of Semiconductor Heterostructures Using Three-Terminal Ballistic Carrier Spectroscopy

External electric field assisted energy band gap modulation and optical properties of SiGe/AsSb heterobilayers

Visualizing Band Profiles of Gate-Tunable Junctions in MoS2/WSe2 Heterostructure Transistors.

Visualizing electrostatic gating effects in two-dimensional heterostructures

Real-space observation of a two-dimensional electron gas at semiconductor heterointerfaces

Control of Electron Tunnelling by Fine Band Engineering of Semiconductor Potential Barriers.

Measuring electrical properties in semiconductor devices by pixelated STEM and off-axis electron holography (or convergent beams vs. plane waves).

Negative Transconductance and Negative Differential Resistance in Asymmetric Narrow Bandgap 2D-3D Heterostructures

Theoretical Investigation of Charge Transfer Between Two Defects in a Wide-Bandgap Semiconductor

Probing energy barriers and quantum confined states of buried semiconductor heterostructures with ballistic carrier injection: An experimental study

Optical Determination of Gate--Tunable Bandgap in Bilayer Graphene - Escholarship