Abstract:Silicon vacancy (SiV) centers in diamond are candidates for quantum networks but exhibit charge instability under illumination. This work uses variable‐wavelength infra‐red excitation to characterize charge transfer from SiV0 to SiV− and from SiV− to SiV2−. These processes occur via different mechanisms, namely, single‐photon recombination and electron tunnelling from a nitrogen donor, findings supported by density functional theory modeling. The silicon vacancy (SiV) center in diamond is drawing much attention due to its optical and spin properties, attractive for quantum information processing and sensing. Comparatively little is known, however, about the dynamics governing SiV charge state interconversion mainly due to challenges associated with generating, stabilizing, and characterizing all possible charge states, particularly at room temperature. Here, multi‐color confocal microscopy and density functional theory are used to examine photo‐induced SiV recombination — from neutral, to single‐, to double‐negatively charged — over a broad spectral window in chemical‐vapor‐deposition (CVD) diamond under ambient conditions. For the SiV0 to SiV‐ transition, a linear growth of the photo‐recombination rate with laser power at all observed wavelengths is found, a hallmark of single photon dynamics. Laser excitation of SiV‒, on the other hand, yields only fractional recombination into SiV2‒, a finding that is interpreted in terms of a photo‐activated electron tunneling process from proximal nitrogen atoms.

Formation Mechanism of SiV in Diamond from Unintentional Silicon Doping by Microwave Plasma Chemical Vapor Deposition

Formation and properties of silicon vacancies in MPCVD-grown polycrystalline diamond

Fabrication of Diamond Nanoneedle Arrays Containing High‐Brightness Silicon‐Vacancy Centers

Large-scale Fabrication of High-Density Silicon-vacancy Centers via Helium-ion Implantation of Diamond Nucleation Surface

Photo‐Induced Charge State Dynamics of the Neutral and Negatively Charged Silicon Vacancy Centers in Room‐Temperature Diamond

Bright silicon vacancy centers in diamond/SiC composite films synthesized by a MPCVD method

First-principles Studies of the Effect of H and F Decoration on the Growth of Silicon Vacancy on (100) Surface in Diamond

Molecular dynamics simulation of silicon ion implantation into diamond and subsequent annealing

Shallow Silicon Vacancy Centers with lifetime-limited optical linewidths in Diamond Nanostructures

The Surface Effect on the Growth of Related Color Centers in Diamond

Improving the creation of SiV centers in diamond via sub-μs pulsed annealing treatment

Photo-induced charge state dynamics of the neutral and negatively charged silicon vacancy centers in room-temperature diamond

Tetramethysilane-assisted Enhancement of Diamond Nucleation on Silicon Substrate

Nucleation growth mechanism of diamond on 4H-SiC substrate by microwave plasma chemical vapor deposition

SiV0 centres in diamond: effect of isotopic substitution in carbon and silicon

Evaluation of single silicon vacancy centers in nanodiamonds created by ion implantation at cryogenic temperatures

Towards wafer-scale diamond nano- and quantum technologies

Tailoring of Nitrogen-Vacancy Colour Centers in Diamond Epilayers by in Situ Sulfur and Nitrogen Anion Engineering

Enhanced conversion efficiency of vacancy-related color centers in diamonds grown on a patterned metal surface by chemical vapor deposition

Fast optoelectronic charge state conversion of silicon vacancies in diamond

Revealing impurity evolution in silicon-doped diamond film via thermal oxidation