Abstract:Nitrogen-vacancy (NV) and silicon-vacancy (SiV) color defects in diamond are promising systems for applications in quantum technology. The NV and SiV centers have multiple charge states, and their charge states have different electronic, optical and spin properties. For the NV centers, most investigations for quantum sensing applications are targeted on the negatively charged NV (NV$^{-}$), and it is important for the NV centers to be in the NV$^{-}$ state. However, it is known that the NV centers are converted to the neutrally charged state (NV$^{0}$) under laser excitation. An energetically favorable charge state for the NV and SiV centers depends on their local environments. It is essential to understand and control the charge state dynamics for their quantum applications. In this work, we discuss the charge state dynamics of NV and SiV centers under high-voltage nanosecond pulse discharges. The NV and SiV centers coexist in the diamond crystal. The high-voltage pulses enable manipulating the charge states efficiently. These voltage-induced changes in charge states are probed by their photoluminescence spectral analysis. The analysis result from the present experiment shows that the high-voltage nanosecond pulses cause shifts of the chemical potential and can convert the charge states of NV and SiV centers with the transition rates of $\sim$ MHz. This result also indicates that the major population of the SiV centers in the sample is the doubly negatively charged state (SiV$^{2-}$), which is often overlooked because of its non-fluorescent and non-magnetic nature. This demonstration paves a path for a method of rapid manipulation of the NV and SiV charge states in the future.

Fast optoelectronic charge state conversion of silicon vacancies in diamond

Fast optoelectronic charge state conversion of silicon vacancies in diamond

Photo‐Induced Charge State Dynamics of the Neutral and Negatively Charged Silicon Vacancy Centers in Room‐Temperature Diamond

Photo-induced charge state dynamics of the neutral and negatively charged silicon vacancy centers in room-temperature diamond

Probing NV and SiV charge state dynamics using high-voltage nanosecond pulse and photoluminescence spectral analysis

Shallow Silicon Vacancy Centers with lifetime-limited optical linewidths in Diamond Nanostructures

Electrical charge state identification and control for the silicon vacancy in 4H-SiC

Rapid, in-situ neutralization of nitrogen- and silicon-vacancy centers in diamond using above-band-gap optical excitation

Wavelength dependence of nitrogen-vacancy center charge cycling

Electrical Charge State Manipulation of Single Silicon Vacancies in a Silicon Carbide Quantum Optoelectronic Device

Neutral Silicon Vacancy Centers in Diamond via Photoactivated Itinerant Carriers

Optical charge state control of spin defects in 4H-SiC

Cavity-enhanced single photon source based on the silicon vacancy center in diamond

Hybrid Group IV Nanophotonic Structures Incorporating Diamond Silicon-Vacancy Color Centers

Multiphoton-Excited Fluorescence of Silicon-Vacancy Color Centers in Diamond

Electrical tailoring of the photoluminescence of silicon-vacancy centers in diamond/silicon heterojunctions

Subdiffraction optical manipulation of the charge state of nitrogen vacancy center in diamond

Sub-diffraction optical manipulation of the chargestate of nitrogen vacancy center in diamond

Plasmonic Diamond Membranes for Ultrafast Silicon Vacancy Emission

The silicon vacancy centers in SiC: determination of intrinsic spin dynamics for integrated quantum photonics

A Diamond-Photonics Platform Based on Silicon-Vacancy Centers in a Single Crystal Diamond Membrane and a Fiber-Cavity