Abstract:Diamond color centers have proven to be versatile quantum emitters and exquisite sensors of stress, temperature, electric and magnetic fields, and biochemical processes. Among color centers, the silicon-vacancy (SiV[Formula: see text]) defect exhibits high brightness, minimal phonon coupling, narrow optical linewidths, and high degrees of photon indistinguishability. Yet the creation of reliable and scalable SiV[Formula: see text]-based color centers has been hampered by heterogeneous emission, theorized to originate from surface imperfections, crystal lattice strain, defect symmetry, or other lattice impurities. Here, we advance high-resolution cryo-electron microscopy combined with cathodoluminescence spectroscopy and 4D scanning transmission electron microscopy (STEM) to elucidate the structural sources of heterogeneity in SiV[Formula: see text] emission from nanodiamond with sub-nanometer-scale resolution. Our diamond nanoparticles are grown directly on TEM membranes from molecular-level seedings, representing the natural formation conditions of color centers in diamond. We show that individual subcrystallites within a single nanodiamond exhibit distinct zero-phonon line (ZPL) energies and differences in brightness that can vary by 0.1 meV in energy and over 70% in brightness. These changes are correlated with the atomic-scale lattice structure. We find that ZPL blue-shifts result from tensile strain, while ZPL red shifts are due to compressive strain. We also find that distinct crystallites host distinct densities of SiV[Formula: see text] emitters and that grain boundaries impact SiV[Formula: see text] emission significantly. Finally, we interrogate nanodiamonds as small as 40 nm in diameter and show that these diamonds exhibit no spatial change to their ZPL energy. Our work provides a foundation for atomic-scale structure-emission correlation, e.g., of single atomic defects in a range of quantum and two-dimensional materials.

Electrical tailoring of the photoluminescence of silicon-vacancy centers in diamond/silicon heterojunctions

Electroluminescence from Si Nanocrystal/c-Si Heterojunction Light-Emitting Diodes

Room temperature electroluminescence from a nanocrystalline diamond/Si heterojunction

Electrical excitation of silicon-vacancy centers in single crystal diamond

Fabrication of Diamond Nanoneedle Arrays Containing High‐Brightness Silicon‐Vacancy Centers

Fast optoelectronic charge state conversion of silicon vacancies in diamond

Enhanced Red Electroluminescence from A Polycrystalline Diamond Film/Si Heterojunction Structure

Unraveling sources of emission heterogeneity in Silicon Vacancy color centers with cryo-cathodoluminescence microscopy

Tailoring optical emission of silicon-vacancy centers in two-dimensional diamond nanosheets via a two-step oxidation approach

Hybrid Group IV Nanophotonic Structures Incorporating Diamond Silicon-Vacancy Color Centers

Photo‐Induced Charge State Dynamics of the Neutral and Negatively Charged Silicon Vacancy Centers in Room‐Temperature Diamond

Electron-beam-induced current evidence for room-temperature photoluminescence of silicon pn diode

Silicon-vacancy color centers in phosphorus-doped diamond

Large-scale Fabrication of High-Density Silicon-vacancy Centers via Helium-ion Implantation of Diamond Nucleation Surface

Enhanced conversion efficiency of vacancy-related color centers in diamonds grown on a patterned metal surface by chemical vapor deposition

Bidirectional Direct-Current Electroluminescence from I-Mgxzn1−xo/n-zno/siox Double-Barrier Heterostructures on Si

Photoluminescence study on the optical properties of silicon-vacancy centre in diamond

Optical properties of silicon-implanted polycrystalline diamond membranes

Probing NV and SiV charge state dynamics using high-voltage nanosecond pulse and photoluminescence spectral analysis

Single-photon emission from silicon-vacancy color centers in polycrystalline diamond membranes