Abstract:Color centers in diamond are important quantum emitters for a broad range of applications ranging from quantum sensing to quantum optics. Understanding the internal energy level structure is of fundamental importance for future applications. We experimentally investigate the level structure of an ensemble of few negatively charged silicon-vacancy (SiV$^{-}$) and germanium-vacancy (GeV$^{-}$) centers in bulk diamond at room temperature by photoluminescence (PL) and excitation (PLE) spectroscopy over a broad wavelength range from 460 nm to 650 nm and perform power-dependent saturation measurements. For SiV$^{-}$ our experimental results confirm the presence of a higher energy transition at ~ 2.31 eV. By comparison with detailed theoretical simulations of the imaginary dielectric function we interpret the transition as a dipole-allowed transition from $^{2}E_{g}$-state to $^{2}A_{2u}$-state where the corresponding $a_{2u}$-level lies deeply inside the diamond valence band. Therefore, the transition is broadened by the diamond band. At higher excitation power of 10 mW we indicate signs of a parity-conserving transition at ~2.03 eV supported by saturation measurements. For GeV$^{-}$ we demonstrate that the PLE spectrum is in good agreement with the mirror image of the PL spectrum of the zero-phonon line (ZPL). Experimentally we do not observe a higher lying energy level up to a transition wavelength of 460 nm. The observed PL spectra are identical, independent of excitation wavelength, suggesting a rapid decay to $^{2}E_{u}$ excited state and followed by optical transition to $^{2}E_{g}$ ground state. Our investigations convey important insights for future quantum optics and quantum sensing experiments based on SiV$^{-}$ center and GeV$^{-}$ center in diamond.

Photoluminescence study on the optical properties of silicon-vacancy centre in diamond

Photoluminescence excitation spectroscopy of SiV$^{-}$ and GeV$^{-}$ color center in diamond

Photoluminescence of SiV centers in single crystal CVD diamond in situ doped with Si from silane

Electrical excitation of silicon-vacancy centers in single crystal diamond

Multiphoton-Excited Fluorescence of Silicon-Vacancy Color Centers in Diamond

Research Progress on Silicon Vacancy Color Centers in Diamond

Low temperature investigations of single silicon vacancy colour centres in diamond

Photo‐Induced Charge State Dynamics of the Neutral and Negatively Charged Silicon Vacancy Centers in Room‐Temperature Diamond

Plasmon Resonance Enhanced Temperature-Dependent Photoluminescence of Si-V Centers in Diamond

Photoluminescence of SiV Centers in CVD Diamond Particles with Specific Crystallographic Planes

Formation Mechanism and Regulation of Silicon Vacancy Centers in Polycrystalline Diamond Films

Silicon-vacancy color centers in Si- and Si,P-doped nanodiamonds: thermal susceptibilities of photo luminescence band at 740 nm

Fluorescence and polarization spectroscopy of single silicon vacancy centers in heteroepitaxial nanodiamonds on iridium

Photo-induced charge state dynamics of the neutral and negatively charged silicon vacancy centers in room-temperature diamond

Photoluminescence of nitrogen-vacancy and silicon-vacancy color centers in phosphorus-doped diamond at room and higher temperatures

Phonon-Assisted Photoluminescence Up-Conversion of Silicon-Vacancy Centers in Diamond.

Optical properties of silicon-implanted polycrystalline diamond membranes

Fabrication of Diamond Nanoneedle Arrays Containing High‐Brightness Silicon‐Vacancy Centers

Evaluation of single silicon vacancy centers in nanodiamonds created by ion implantation at cryogenic temperatures

Improving the creation of SiV centers in diamond via sub-μs pulsed annealing treatment

Electrical tailoring of the photoluminescence of silicon-vacancy centers in diamond/silicon heterojunctions