Abstract:We have characterized thermal susceptibilities of the spectral band at 740 nm of silicon-vacancy (SiV) centers in Si- and Si,P-doped nanodiamonds over a temperature range from 295 K to 350 K, which is of interest for thermometry in biological systems. Si-doped crystals reveal linear dependence of the SiV zero-phonon line position, width and relative amplitude with susceptibilities of 0.0126(4) nm/K, 0.062(2) nm/K and $-0.037(2)$ K$^{-1}$, respectively. Si,P-doped nanodiamonds show significantly smaller (up to 35 % for the width) susceptibilities and prove control of SiV properties with additional chemical doping. It is argued that a significant contribution to the heating of the nanodiamonds induced by laser light can be intrinsic due to a high concentration and low luminescence quantum yield of SiV centers.

What problem does this paper attempt to address?

This paper aims to solve the problem of achieving high - precision, non - invasive temperature sensing in biological systems. Specifically, the authors studied the thermal sensitivity of the photoluminescence band of silicon - vacancy (SiV) color centers in silicon - doped (Si) and silicon - phosphorus - doped (Si,P) nanodiamonds at a wavelength of 740 nm in the temperature range from 295 K to 350 K. This temperature range is particularly important for biological applications. ### Main problems and solutions 1. **Temperature - dependent photoluminescence characteristics**: - The authors experimentally measured the photoluminescence characteristics of SiV color centers at different temperatures, including the zero - phonon line (ZPL) position, width, and relative amplitude. - Si - doped nanodiamonds showed a linear relationship between these parameters and temperature, with thermal sensitivities of $ s_{\lambda_{zpl}} = 0.0126(4) \, \text{nm/K} $, $ s_\gamma = 0.062(2) \, \text{nm/K} $, $ s_A = - 0.037(2) \, \text{K}^{-1} $ respectively. 2. **Effect of co - doping**: - Silicon - phosphorus - doped (Si,P) nanodiamonds showed a significantly smaller thermal sensitivity (for example, the thermal sensitivity of the width was reduced by about 35%), indicating that the thermal properties of SiV color centers can be regulated by introducing other chemical elements. - These results prove that additional chemical doping can significantly affect the thermal sensitivity of SiV color centers, thus providing a new research direction for improving the accuracy of temperature measurement. 3. **Laser heating effect**: - The study also explored the self - heating phenomenon of nanodiamonds caused by laser irradiation and found that this heating may be due to the high concentration and low luminescence quantum yield of SiV color centers. - The authors experimentally determined the influence of laser power on temperature and corrected the actual temperature to ensure the accuracy of measurement. ### Conclusion Through this study, the authors comprehensively characterized the luminescence characteristics of SiV color centers in nanodiamonds and their dependence on temperature, especially in the biologically relevant temperature range. In addition, they also proved that the thermal sensitivity of SiV color centers can be regulated by co - doping, providing theoretical basis and technical support for further optimizing optical thermometers.

Silicon-vacancy color centers in Si- and Si,P-doped nanodiamonds: thermal susceptibilities of photo luminescence band at 740 nm

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