Abstract:Diamond color centers have proven to be versatile quantum emitters and exquisite sensors of stress, temperature, electric and magnetic fields, and biochemical processes. Among color centers, the silicon-vacancy (SiV[Formula: see text]) defect exhibits high brightness, minimal phonon coupling, narrow optical linewidths, and high degrees of photon indistinguishability. Yet the creation of reliable and scalable SiV[Formula: see text]-based color centers has been hampered by heterogeneous emission, theorized to originate from surface imperfections, crystal lattice strain, defect symmetry, or other lattice impurities. Here, we advance high-resolution cryo-electron microscopy combined with cathodoluminescence spectroscopy and 4D scanning transmission electron microscopy (STEM) to elucidate the structural sources of heterogeneity in SiV[Formula: see text] emission from nanodiamond with sub-nanometer-scale resolution. Our diamond nanoparticles are grown directly on TEM membranes from molecular-level seedings, representing the natural formation conditions of color centers in diamond. We show that individual subcrystallites within a single nanodiamond exhibit distinct zero-phonon line (ZPL) energies and differences in brightness that can vary by 0.1 meV in energy and over 70% in brightness. These changes are correlated with the atomic-scale lattice structure. We find that ZPL blue-shifts result from tensile strain, while ZPL red shifts are due to compressive strain. We also find that distinct crystallites host distinct densities of SiV[Formula: see text] emitters and that grain boundaries impact SiV[Formula: see text] emission significantly. Finally, we interrogate nanodiamonds as small as 40 nm in diameter and show that these diamonds exhibit no spatial change to their ZPL energy. Our work provides a foundation for atomic-scale structure-emission correlation, e.g., of single atomic defects in a range of quantum and two-dimensional materials.

Improving the creation of SiV centers in diamond via sub-μs pulsed annealing treatment

Fabrication of Diamond Nanoneedle Arrays Containing High‐Brightness Silicon‐Vacancy Centers

Large-scale Fabrication of High-Density Silicon-vacancy Centers via Helium-ion Implantation of Diamond Nucleation Surface

Bright Near-Surface Silicon Vacancy Centers in Diamond Fabricated by Femtosecond Laser Ablation

Electrical excitation of silicon-vacancy centers in single crystal diamond

Unraveling sources of emission heterogeneity in Silicon Vacancy color centers with cryo-cathodoluminescence microscopy

Shallow Silicon Vacancy Centers with lifetime-limited optical linewidths in Diamond Nanostructures

Plasmon Resonance Enhanced Temperature-Dependent Photoluminescence of Si-V Centers in Diamond

Formation Mechanism and Regulation of Silicon Vacancy Centers in Polycrystalline Diamond Films

Scalable Focused Ion Beam Creation of Nearly Lifetime-Limited Single Quantum Emitters in Diamond Nanostructures

Research Progress on Silicon Vacancy Color Centers in Diamond

Scalable creation of silicon-vacancy color centers in diamond by ion implantation through a 1-$μ$m pinhole

Tailoring optical emission of silicon-vacancy centers in two-dimensional diamond nanosheets via a two-step oxidation approach

Evaluation of single silicon vacancy centers in nanodiamonds created by ion implantation at cryogenic temperatures

Formation Mechanism of SiV in Diamond from Unintentional Silicon Doping by Microwave Plasma Chemical Vapor Deposition

Varying temperature and silicon content in nanodiamond growth: effects on silicon-vacancy centers

Hybrid Group IV Nanophotonic Structures Incorporating Diamond Silicon-Vacancy Color Centers

Array of bright silicon-vacancy centers in diamond fabricated by low-energy focused ion beam implantation

Single photon emission from silicon-vacancy centres in CVD-nano-diamonds on iridium

Single-photon emission from silicon-vacancy color centers in polycrystalline diamond membranes

Molecular dynamics simulation of silicon ion implantation into diamond and subsequent annealing