Fast optoelectronic charge state conversion of silicon vacancies in diamond

Manuel Rieger,Viviana Villafane,Lina M. Todenhagen,Stephan Matthies,Stefan Appel,Martin S. Brandt,Kai Mueller,Jonathan J. Finley

DOI: https://doi.org/10.1126/sciadv.adl4265

2023-10-19

Abstract:Group IV vacancy color centers in diamond are promising spin-photon interfaces with strong potential for applications for photonic quantum technologies. Reliable methods for controlling and stabilizing their charge state are urgently needed for scaling to multi-qubit devices. Here, we manipulate the charge state of silicon vacancy (SiV) ensembles by combining luminescence and photo-current spectroscopy. We controllably convert the charge state between the optically active SiV$^-$ and dark SiV$^{2-}$ with MHz rates and 90% contrast by judiciously choosing the local potential applied to in-plane surface electrodes and the laser excitation wavelength. We observe intense SiV$^-$ photoluminescence under hole-capture, measure the intrinsic conversion time from the dark SiV$^{2-}$ to the bright SiV$^-$ to be 36.4(6.7)ms and demonstrate how it can be enhanced by a factor of $10^5$ via optical pumping. Moreover, we obtain new information on the defects that contribute to photo-conductivity, indicating the presence of substitutional nitrogen and divacancies.

Quantum Physics,Applied Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: how to reliably control and stabilize the charge state of silicon vacancies (SiV) in diamond to achieve the expansion of multi - qubit devices. Specifically, the research focuses on achieving rapid and controllable conversion of the charge state of SiV aggregates by combining photoluminescence and photocurrent spectroscopy techniques.

### Research Background and Problem Description

In the application of photonic quantum technology, color centers in diamond (especially Group IV vacancy color centers, such as silicon vacancy SiV, germanium vacancy GeV, and tin vacancy SnV) have great potential as spin - photon interfaces. These color centers possess excellent optical properties, such as bright zero - phonon lines, large Debye - Waller factors, and lifetime - limited linewidths. However, in order to achieve the expansion of multi - qubit devices, methods for reliably controlling and stabilizing the charge states of these color centers are required.

### Research Methods and Main Findings

1. **Experimental Design**:
- High - purity CVD - grown single - crystal diamond samples were used, and SiV centers were generated by 28Si ion implantation.
- Interdigitated metal contact electrodes were defined on the diamond surface to apply a local electric field.
- In combination with quasi - resonant optical irradiation, effective and reversible control of the SiV charge state was achieved.

2. **Main Results**:
- By controlling the local potential applied to the planar surface electrodes and the laser excitation wavelength, charge - state conversion with a contrast of > 90% could be achieved at a MHz rate.
- Strong SiV− photoluminescence was observed, and the intrinsic conversion time from the dark state SiV2− to the bright state SiV− was measured to be 36.4(67) milliseconds.
- Through optical pumping, this conversion time could be accelerated by more than 5 orders of magnitude.
- Defects causing photoconductivity were discovered, including substitutional nitrogen and double vacancies.

### Key Formulas and Parameters

- Photocurrent signal model:
\[
I_j = S A^* T^2 e^{-\phi_j / (k_B T + h\nu)}
\]
where \(S\) is the junction area, \(A^*\) is the Richardson constant, \(T\) is the temperature, \(k_B\) is the Boltzmann constant, \(h\nu\) is the laser photon energy, and \(\phi_j\) is the effectively corrected Schottky barrier height.

- Schottky barrier height:
\[
\phi_j = \phi_0 \pm eV \left(1 - \frac{1}{n_j}\right)
\]
where \(\phi_0\) is the ideal Schottky barrier at zero bias, \(V\) is the voltage drop at each gold - diamond junction, and \(n_j\) is the ideality factor of the double Schottky barrier formed at each contact point.

### Summary

This research shows that by combining electrical and optical means, the charge state of SiV can be efficiently controlled and converted in the kHz to MHz range. This provides important technical support for the further development of quantum photonic devices based on diamond color centers.