Abstract:We report on the total-energy electronic-structure calculations on the basis of the density-functional theory that clarify atomic and electronic structures of the silicene on the Ag(111), the hexagonal BN, and the hydrogen-processed Si(111) surfaces. On the Ag(111) surfaces which are most commonly used as substrates for the silicene in current experiments, we find several stable and metastable structures with the 4 x 4, root 13 x root 13, and 2 root 3 x 2 root 3 periodicities with respect to the 1 x 1 Ag(111) lateral cell within the total-energy difference of 70 meV per Si atom. Those stable structures show the excellent agreement with the scanning tunneling microscopy measurement in their structural characteristics. The metastable structures with comparable total energies await experimental observations. In all the stable and metastable structures, the silicene is buckled substantially so that the pi state rehybridizes with the sigma state, leading to the pi+ state, and then the linear energy dispersion peculiar to the Dirac electrons disappears in several cases associated with the opening of the energy gap. Moreover, we find that the substantial mixing of the pi+ state, generated in such a way, with the states of the Ag atoms in the substrate converts the pi+ state to the mixed pi+ state and thus makes the state shift downwards or upwards, eventually annihilating Dirac electrons near the Fermi level. The absence of Dirac electrons caused in this way is found to be common to all the stable and metastable structures of the silicene on the Ag(111) substrates. We also find that the interaction between the pi+ and the substrate orbitals should be weak enough to preserve Dirac electrons and at the same time be sizable to keep the system stable. We then propose two specific substrates as good candidates for the silicene with Dirac electrons, i.e., hexagonal BN and the hydrogen-processed Si(111) surface. We clarify that the silicene on those substrates are stable enough with the binding energy comparable to or twice that of the graphite and preserve Dirac electrons near the Fermi level.

Topological Dirac States Beyond Π Orbitals for Silicene on SiC(0001) Surface

Dumbbell Silicene: A Strain-Induced Room Temperature Quantum Spin Hall Insulator

All-Silicon Topological Semimetals with Closed Nodal Line.

Tight-binding model and ab initio calculation of silicene with strong spin-orbit coupling in low-energy limit

Quantum Spin Hall Effect In Silicene And Two-Dimensional Germanium

Quantum Valley Hall States and Topological Transitions in Pt(Ni, Pd)-Decorated Silicene: A First-Principles Study

Resolving the Controversial Existence of Silicene and Germanene Nanosheets Grown on Graphite.

Phase Diagrams and Topological Mixed Edge States in Silicene with Intrinsic and Extrinsic Rashba Effects

Quantum spin/valley Hall effect and topological insulator phase transitions in silicene

Absence And Presence Of Dirac Electrons In Silicene On Substrates

Topological States in a Two-Dimensional Metal Alloy in Si Surface: BiAg/Si(111)- 4×4 Surface

Direct Evidence of Interaction-Induced Dirac Cones in a Monolayer Silicene/ag(111) System.

Strain-induced Large Band-Gap Topological Insulator in a New Stable Silicon Allotrope: Dumbbell Silicene

Tailoring topological states in silicene using different halogen-passivated Si(111) substrates

Observation of Dirac Cone Warping and Chirality Effects in Silicene

Electron Delocalization in Gate-Tunable Gapless Silicene

Electronic Structure and Quasiparticle Band Gap of Silicene Structures

Electronic Structure and Quasiparticle Bandgap of Silicene Structures

Low-Energy Effective Hamiltonian Involving Spin-Orbit Coupling In Silicene And Two-Dimensional Germanium And Tin

Antiferromagnetic and Topological States in Silicene: A Mean Field Study

Quantum Spin Hall Effect in Tilted Penta Silicene and Its Isoelectronic Substitutions.