Abstract:Silicene, a silicon analogue of graphene, has attracted increasing attention during the past few years. As early as in 1994, the possibility of stage corrugation in the Si analogs of graphite had already been theoretically explored. But there were very few studies on silicene until 2009, when silicene with a low buckled structure was confirmed to be dynamically stable by ab initio calculations. In spite of the low buckled geometry, silicene shares most of the outstanding electronic properties of planar graphene (e.g., the "Dirac cone", high Fermi velocity and carrier mobility). Compared with graphene, silicene has several prominent advantages: (1) a much stronger spin-orbit coupling, which may lead to a realization of quantum spin Hall effect in the experimentally accessible temperature, (2) a better tunability of the band gap, which is necessary for an effective field effect transistor (FET) operating at room temperature, (3) an easier valley polarization and more suitability for valleytronics study. From 2012, monolayer silicene sheets of different superstructures were successfully synthesized on various substrates, including Ag(111), Ir(1 1 I), ZrB2(0001), ZrC(111) and MoS2 surfaces. Multilayer silicene sheets have also been grown on Ag(1 1 1) surface. The experimental successes have stimulated many efforts to explore the intrinsic properties as well as potential device applications of silicene, including quantum spin Hall effect, quantum anomalous Hall effect, quantum valley Hall effect, superconductivity, band engineering, magnetism, thermoelectric effect, gas sensor, tunneling FET, spin filter, and spin FET, etc. Recently, a silicene FET has been fabricated, which shows the expected ambipolar Dirac charge transport and paves the way towards silicene-based nanoelectronics. This comprehensive review covers all the important theoretical and experimental advances on silicene to date, from the basic theory of intrinsic properties, experimental synthesis and characterization, modulation of physical properties by modifications, and finally to device explorations. (C) 2016 Elsevier Ltd. All rights reserved.

Electronic Structure and Quasiparticle Band Gap of Silicene Structures

Electronic Structure and Quasiparticle Bandgap of Silicene Structures

Quasi-Particle Band Structure and Enhanced Excitonic Effect of Silicane by Using GW and BSE Calculation

Dumbbell Silicene: A Strain-Induced Room Temperature Quantum Spin Hall Insulator

Tuning the Band Gap in Silicene by Oxidation

Electron Delocalization in Gate-Tunable Gapless Silicene

Topological Dirac States Beyond Π Orbitals for Silicene on SiC(0001) Surface

Electronic Structure Of Silicene On Ag(111): Strong Hybridization Effects

Tunable Electronic and Optical Properties of Monolayer Silicane under Tensile Strain: a Many-Body Study.

Dirac Points And Van Hove Singularities Of Silicene Under Uniaxial Strain

The Effects Of Thermal And Electric Fields On The Electronic Structures Of Silicene

Tight-binding model and ab initio calculation of silicene with strong spin-orbit coupling in low-energy limit

Semiconducting Silicene: A Two-Dimensional Silicon Allotrope with Hybrid Honeycomb-Kagome Lattice

Chemical Functionalization of Silicene

Strain and chirality effects on the mechanical and electronic properties of silicene and silicane under uniaxial tension

Silicene nanomesh

Modulation of Electronic Properties with External Fields in Silicene-Based Nanostructures

Integer quantum Hall effect and topological phase transitions in silicene

First-principles calculations of mechanical and electronic properties of silicene under strain

Rise of Silicene: A Competitive 2d Material

Silicene transistors— A reviewProject supported by the National Natural Science Foundation of China (Grant Nos. 11274016, 11474012, and 1207141) and the National Basic Research Program of China (Grant Nos. 2013CB932604 and 2012CB619304).