Abstract:It is significant to prepare large-scale and high-quality graphene on SiC substrate for the research of the device in nanoelectronics. This review presents a brief overview on the progress in the growth mechanism for epitaxial graphene on SiC substrate surface, the methods of modification and the research of graphene-based devices. Graphene has attracted the interest of the scientists due to its exceptional electronic properties, which make it a promising material for nanoelectronics. Nowadays, the high-quality epitaxial graphene can be obtained with the smooth morphology, few defects, large size by controling the environment, annealing temperature and vapor pressure. The special structure that the first carbon layer grown above the Si-terminated SiC substrate form strong covalent bonds with substrate, results in some unusual properties such as opening a band gap in the graphene bilayer and a n-type doping of the graphene layers. The rotated fault, which is owed to decoupling effect, has been observed in C-terminated multilayer graphene. And such intrinsic properties of graphene depend on the atom type of SiC surface, surface state, weakness of bonds and the transformation of the electrons between the few-layer graphene and SiC substrate. Some limitations (such as little band gap, intrinsic n-type character, etc.) resulted from the properties of epitaxial graphene must be overcome for the device application. Thus tremendous effort has been devoted to achieve the deliberate control of the band gap, the density and character of its charge carriers. Having a deep understanding of the unique properties for epitaxial graphene, this article then selectively reviews modification methods by considing the type of atoms, size of atoms, work function and electron affinity. In order to manufacture well-behaved devices, many of the fundamental problems of graphene-based eletronics, including methods to make metal contacts, nanoscale patterning and other technical details should be addressed perfectly. It is also important to control the material of gate, modulate the face of substrate, the width of channel in order to improve the performance of the graphene-based devices such as carrier mobility and I-on/I-off ratios. The combination between the experiment and calculation (such as Monte Carlo simulation, density functional theory, molecular dynamics simulation etc.) can make a deeper understanding of the effects of SiC substrate and the methods of modification, which can be served as a guide for further research.

Silicene transistors— A reviewProject supported by the National Natural Science Foundation of China (Grant Nos. 11274016, 11474012, and 1207141) and the National Basic Research Program of China (Grant Nos. 2013CB932604 and 2012CB619304).

Tunable and sizable band gap in silicene by surface adsorption.

Tunable Band Gap and Doping Type in Silicene by Surface Adsorption: Towards Tunneling Transistors.

Rise of Silicene: A Competitive 2d Material

Silicene nanomesh

Dumbbell Silicene: A Strain-Induced Room Temperature Quantum Spin Hall Insulator

Semiconducting Silicene: A Two-Dimensional Silicon Allotrope with Hybrid Honeycomb-Kagome Lattice

Tuning the Band Gap in Silicene by Oxidation

Silicene spintronics — A concise reviewProject supported by the National Natural Science Foundation of China (Grant Nos. 11274016 and 11474012), the National Basic Research Program of China (Grant Nos. 2013CB932604 and 2012CB619304), and a National Science Foundation (Grant No. 1207141).

Two-Dimensional Silicon Atomic Layer Field-Effect Transistors: Electronic Property, Metal-Semiconductor Contact, and Device Performance

A Silicon Cluster Based Single Electron Transistor with Potential Room-Temperature Switching

Sub-5-nm Monolayer Silicane Transistor: A First-Principles Quantum Transport Simulation

Electronic Structure and Quasiparticle Band Gap of Silicene Structures

Electronic Structure and Quasiparticle Bandgap of Silicene Structures

Substrate-induced half-metallic property in epitaxial silicene

Negative-Differential-Resistance Devices Achieved by Band-Structure Engineering in Silicene under Periodic Potentials

Modulation of Electronic Properties with External Fields in Silicene-Based Nanostructures

Progress of Properties, Modification and Applications of Graphene on SiC Substrate

Extending the Scaling Limit of Silicon Channel Transistors Through hhk-Silicene Monolayer: A Computational Study

Tunable bandgap in silicene and germanene.

Quasi-free-standing Bilayer Epitaxial Graphene Field-Effect Transistors on 4H-Sic (0001) Substrates