Abstract:Presently Si-based field-effect transistors (FET) are approaching their physical limit and challenging Moore's law for their short-channel effect, and further scaling their gate length down to the sub-10 nm region is becoming extremely difficult. Two-dimensional (2D) layered semiconductors with atom-scale uniform thicknesses and absence of dangling bonds on the interface are considered as potential channel materials to support further miniaturization and integrated electronics. Wu F, et al. (2022 Nature 603 259) have successfully fabricated a FET with gate lengths below 1 nm using atomically thin molybdenum disulfide with exceptional device performance. This breakthrough has greatly encouraged further theoretical predictions regarding the performance of 2D devices. Additionally, 2D SnS exhibits high carrier mobility, anisotropic electronic properties, and stabilized in ambient condition conducive to advanced applications in 2D semiconductor technology. Herein, we explore the quantum transport properties of sub-5 nm monolayer (ML) SnS FET using first-principles quantum transport simulation. Considering the anisotropic electronic SnS, the double-gated-two-probe device model is constructed along the armchair and zigzag directions of ML SnS. After test five kinds of doping concentrations, a doping concentration of 5×10 13 cm -2 is the best one for SnS FET. We also used the underlap (UL) with range of 0, 2, and 4 nm to improve the device performance. On-state current ( I on ) is an important parameter for evaluating the transition speed of a logic device. A higher I on of a device can help to increase the switching speed of high-performance (HP) servers. The main conclusions are as follows. 1) I on of the n-type 2 nm (UL=4 armchair), 3 nm (UL=2), 4 nm (UL=3), 5 nm (UL=0) and the p-type 1 nm (UL=2 zigzag), 2 nm (UL=2 zigzag), 3 nm (UL=2,4 zigzag), 4 nm (UL=2,4 zigzag), and 5 nm (UL=0, armchair/zigzag) gate-length devices can meet the standards for HP applications for the next decade in the International Technology Roadmap for semiconductors (ITRS, 2013 version). 2) I on of the n-type device along the armchair direction (31-2369μA/μm) are larger than that in the zigzag direction (4.04-1943μA/μm), while p-type along the zigzag direction (545-4119μA/μm) are larger than that in the armchair direction (0.7-924μA/μm). Therefore, the p-type ML GeSe MOSFETs have a predominantly anisotropic current. 3) I on of the p-type 3 nm gate-length (UL=0) device along the zigzag direction has the highest valued 4119 μA/μm is 2.93 times larger than that in the same gate-length UL=2 (1407μA/μm). Hence, an overlong UL will weaken the performance of the device because the gate of the device cannot well control the UL region. Thus, a suitable length of UL for FET is very important. 4) Remarkably, I on of the p-type devices (zigzag), even at a 1 nm gate-length, can fulfill the requirements of HP applications for the next decade in the ITRS, with a value as high as 1934 μA/μm. To our knowledge, this is the best-performing device material reported at 1 nm gate length. 5) Subthreshold swing (SS) evaluates the control ability of the gate in the subthreshold region. The better the gate control, the smaller SS the device has. The limit of SS for traditional FETs is 60 mV/dec (at room temperature). Values of SS for ML SnS FET alone zigzag direction are less than those along the armchair direction because the leakage current is influenced by the effective mass.

Sub-5-nm Monolayer Silicane Transistor: A First-Principles Quantum Transport Simulation

Simulation Study of Device Physics Issues in III&#x2013;V MOSFETs at 10 Nm Node

Promising Properties of Sub-5 nm Monolayer MoSi2N4 Transistor

Quantum Transport Study of Si Ultrathin-Body Double-Gate Pmosfets: ${I}$ – ${V}$ , ${C}$ – ${V}$ , Energy Delay, and Parasitic Effects

Sub-5 Nm Monolayer MoS2 Transistors Toward Low-Power Devices

First-Principles-Based Quantum Transport Simulations of High- Performance and Low-Power MOSFETs Based on Monolayer Ga2O3

Strain Optimization in Silicon P-Type Double-Gate MOSFET at 7nm Channel Length

Monolayer WSi2N4: A promising channel material for sub-5-nm-gate homogeneous CMOS devices

Performance Analysis of Ultra-thin-Body, Double-Gate pMOSFETs at 5 nm Technology Node

Quantum Transport Simulation of Sub-1-nm Gate Length Monolayer MoS2 Transistors

Sub-5 nm Monolayer MoS 2 Transistors toward Low-Power Devices

Performance limits exploration of sub-5 nm monolayer germanane transistors: A first-principle quantum transport simulation

Simulations of Quantum Transport in Sub-5-nm Monolayer Phosphorene Transistors

Sub-5 nm Gate-Length Monolayer Selenene Transistors

High-performance Sub-10 Nm Monolayer Bi2O2Se Transistors

Excellent Device Performance of Sub‐5‐nm Monolayer Tellurene Transistors

Sub-5 Nm Monolayer Arsenene and Antimonene Transistors

High-performance Sub-5nm Monolayer Tin Sulfide (SnS) Field-effect Transistors: a First principles Study

Extending the Scaling Limit of Silicon Channel Transistors Through hhk-Silicene Monolayer: A Computational Study

Electronic Structure and Quantum Transport Properties of 2D SiP: A First-Principles Study