Abstract:We theoretically study the electronic band structure of isolated unpaired and paired dangling bonds (DB), DB wires and DB clusters on H:Si(100)-(2$\times$1) surface using Extended Hückel Theory (EHT) and report their effect on the Si band gap. An isolated unpaired DB introduces a near-midgap state, whereas a paired DB leads to $\pi$ and $\pi^*$ states, similar to those introduced by an unpassivated asymmetric dimer (AD) Si(100)-(2$\times$1) surface. Such induced states have very small dispersion due to their isolation from the other states, which reside in conduction and valence band. On the other hand, the surface state induced due to an unpaired DB wire in the direction along the dimer row (referred to as $[\bar{1}10]$), has large dispersion due to the strong coupling between the adjacent DBs, being 3.84$Å$ apart. However, in the direction perpendicular to the dimer row (referred to as [110]), due to the reduced coupling between the DBs being 7.68$Å$ apart, the dispersion in the surface state is similar to that of an isolated unpaired DB. Apart from this, a paired DB wire in $[\bar{1}10]$ direction introduces $\pi$ and $\pi^*$ states similar to those of an AD surface and a paired DB wire in [110] direction exhibits surface states similar to those of an isolated paired DB, as expected. Besides this, we report the electronic structure of different DB clusters, which exhibit states inside the band gap that can be interpreted as superpositions of states due to unpaired and paired DBs.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to study the electronic band structures of isolated dangling bonds (DB), dangling - bond wires and dangling - bond clusters on the hydrogenated silicon (100)-(2×1) surface, and report the influence of these structures on the silicon band gap. Specifically, the authors use the extended Hückel theory (EHT) to calculate the electronic states of these structures in order to understand how they introduce new energy levels and the positions and properties of these energy levels in the silicon band gap. ### Main problem summary: 1. **Influence of isolated dangling bonds (DB)**: - Isolated unpaired dangling bonds (unpaired DB) will introduce a state near the mid - band gap. - Isolated paired dangling bonds (paired DB) will introduce π and π* states similar to those on the asymmetric dimer (AD) surface. 2. **Influence of dangling - bond wires (DB wires)**: - Unpaired dangling - bond wires in the [110] direction have large dispersion in their surface states due to strong coupling between adjacent dangling bonds. - Unpaired dangling - bond wires in the [110] direction have small dispersion, close to that of isolated unpaired dangling bonds, due to large spacing between dangling bonds. - Paired dangling - bond wires introduce π and π* states in the [110] direction, similar to isolated paired dangling bonds, but show smaller dispersion in the [110] direction. 3. **Influence of dangling - bond clusters (DB clusters)**: - States inside the dangling - bond clusters can be interpreted as superpositions of unpaired and paired dangling - bond states, but have larger dispersion due to interactions. ### Formula explanation: - The electronic band structure is calculated by the extended Hückel theory (EHT), involving the Fourier transforms of the Hamiltonian matrix $ H $ and the overlap matrix $ S $: \[ H(\vec{k})=\sum_{m = 1}^{N}H_{mn}e^{i\vec{k}\cdot(\vec{d}_m-\vec{d}_n)} \] \[ S(\vec{k})=\sum_{m = 1}^{N}S_{mn}e^{i\vec{k}\cdot(\vec{d}_m-\vec{d}_n)} \] where $\vec{k}=\vec{k}_1+\vec{k}_2$, $\vec{k}_1$ and $\vec{k}_2$ are the reciprocal lattice vectors of the surface Brillouin zone, and $\vec{d}_m-\vec{d}_n$ is the displacement between adjacent unit cells and the central unit cell. ### Conclusion: This study reveals the specific influences of different dangling - bond configurations on the electronic states of the silicon surface, especially the new states introduced within the band gap and their dispersion characteristics. This is of great significance for understanding the behavior of dangling bonds at the nanoscale and their potential applications.

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