Spin-polarized quantum transport in Si dangling bond wires

Qi An,Chen Hu,Guanghua Yu,Hong Guo

DOI: https://doi.org/10.1039/d0nr00037j

IF: 6.7

2020-01-01

Nanoscale

Abstract:We report theoretical modeling of spin-dependent quantum transport properties of dangling bond wires (DBWs) on the Si(100)-2 × 1:H surface.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry

What problem does this paper attempt to address?

A spin-polarised first principles study of short dangling bond wires on Si(001)

C.F.Bird,D.R.Bowler

DOI: https://doi.org/10.1016/S0039-6028%2803%2900399-6

2003-03-06

Abstract:Short dangling bond wires (DB wires), fabricated on H-terminated Si(001) surfaces, show patterns of displacement that depend on their length. We have performed density function calculations, with and without spin-polarisation, designed to investigate the atomic and electronic structure of these wires. As expected, we find that even length wires are accurately modelled by non-spin polarised calculations, whilst odd length wires must be modelled using spin-polarised calculations. In particular, the use of spin-polarisation provides quantative agreement with STM observations, rather than the qualitative agreement reported elsewhere.

Materials Science
Spin transport in dangling-bond wires on doped H-passivated Si(100)

Mikaël Kepenekian,Roberto Robles,Riccardo Rurali,Nicolás Lorente

DOI: https://doi.org/10.1088/0957-4484/25/46/465703

2014-09-03

Abstract:New advances in single-atom manipulation are leading to the creation of atomic structures on H passivated Si surfaces with functionalities important for the development of atomic and molecular based technologies. We perform total-energy and electron-transport calculations to reveal the properties and understand the features of atomic wires crafted by H removal from the surface. The presence of dopants radically change the wire properties. Our calculations show that dopants have a tendency to approach the dangling-bond wires, and in these conditions, transport is enhanced and spin selective. These results have important implications in the development of atomic-scale spintronics showing that boron, and to a lesser extent phosphorous, convert the wires in high-quality spin filters.

Materials Science
Spin-Dependent Transport Through A Quantum Wire on A Graphene Surface

Fu-Bin Yang,Yan Cheng,Fu-Ti Liu,Xiang-Rong Chen

DOI: https://doi.org/10.1063/1.4773913

IF: 4

2013-01-01

Applied Physics Letters

Abstract:Electron transport through a quantum wire coupled with ferromagnetic leads on a graphene sheet is studied by the Keldysh nonequilibrium Green's function method. We investigate the dependence of the transport properties on the wire-graphene coupling strength in detail. It is found that the peaks of the density of states fade away and the current is suppressed with the increasing wire–graphene coupling strength. The spin polarized strength of the two leads can effectively suppress the current and the transmission. The results obtained provide valuable theoretical guidance to the spintronics experiment.
Quantum Size Effects in Competing Charge and Spin Orderings of Dangling Bond Wires on Si(001)

Ji Young Lee,Jun-Hyung Cho,Zhenyu Zhang

DOI: https://doi.org/10.1103/physrevb.80.155329

IF: 3.7

2009-01-01

Physical Review B

Abstract:Using spin-polarized density-functional theory calculations, we investigate the competition between charge and spin orderings in dangling-bond (DB) wires of increasing lengths fabricated on an H-terminated Si(001) surface. For wires containing less than ten DBs as studied in recent experiments, we find antiferromagnetic (AF) ordering to be energetically much more favorable than charge ordering. The energy preference of AF ordering shrinks in an oscillatory way as the wire length increases and preserves its sign even for DB wires of infinite length. The oscillatory behavior can be attributed to quantum size effects as the DB electrons fill discrete quantum levels. The predicted AF ordering is in startling contrast with the prevailing picture of charge ordering due to Jahn-Teller distortion or Peierls instability for wires of finite or infinite lengths, respectively.
Spin transport in quantum dot embedded in Aharonov–Bohm ring

J.S. Wei,R.Z. Wang,R.Y. Yuan,J.Q. You,H. Yan

DOI: https://doi.org/10.1016/j.physleta.2005.07.024

IF: 2.707

2005-01-01

Physics Letters A

Abstract:Spin polarized transport was studied by employing non-equilibrium Green function method, for a model of quantum dot (QD) embedded in a mesoscopic Aharonov–Bohm (AB) ring with magnetic field applied on QD. In comparison with the situation without magnetic field on QD, the average spin occupations separate with the increase in applied magnetic field on QD; in addition, magnetic field on QD has profound effect on the density of states for different spins in QD; on the other hand, the amplitude and phase of transmission for up spin and down spin were found to present novel effects, such as, the additional peak in the phase of transmission. To understand the spin transport in the system of QD coupled to AB ring, the effects of the two magnetic fields imposed on the QD and penetrating the AB ring should be considered.
Spin-Dependent Transport in Diluted-Magnetic-Semiconductor/Semiconductor Quantum Wires

Wen Xu,Yong Guo

DOI: https://doi.org/10.1063/1.2219336

IF: 2.877

2006-01-01

Journal of Applied Physics

Abstract:Spin-polarized transport properties have been investigated in diluted-magnetic-semiconductor/semiconductor quantum wires. We stress the effects introduced by the structural configuration and geometric parameters as well as the external magnetic field. It is found that the symmetric quantum wire shows quite different spin-dependent transport characteristics from the asymmetric one. It is also found that the spin-up component of the conductance can be considerably suppressed when the magnetic field is large enough, and thus nearly 100% spin polarization can be obtained in such kind of quantum wire. Moreover, one can effectively modulate the spin-dependent conductance in the quantum wire structure by varying the geometric parameters and the Fermi energy. (c) 2006 American Institute of Physics.
Anisotropic transport in quantum wires embedded in (110) plane

Fang Cheng,Kai Chang

DOI: https://doi.org/10.48550/arXiv.0911.0263

2009-11-02

Abstract:We investigate theoretically the effects of the Coulomb interaction and spin-orbit interactions (SOIs) on the anisotropic transport property of semiconductor quantum wires embedded in (110) plane. The anisotropy of the dc conductivity can be enhanced significantly by the Coulomb interaction for infinite-long quantum wires. But it is smeared out in quantum wires with finite length, while the ac conductivity still shows anisotropic behavior, from which one can detect and distinguish the strengths of the Rashba SOI and Dresselhaus SOI.

Strongly Correlated Electrons
Spin-orbit Interaction Induced Anisotropic Property in Interacting Quantum Wires

Fang Cheng,Guanghui Zhou,Kai Chang

DOI: https://doi.org/10.1186/1556-276x-6-213

2011-01-01

Nanoscale Research Letters

Abstract:We investigate theoretically the ground state and transport property of electrons in interacting quantum wires (QWs) oriented along different crystallographic directions in (001) and (110) planes in the presence of the Rashba spin-orbit interaction (RSOI) and Dresselhaus SOI (DSOI). The electron ground state can cross over different phases, e.g., spin density wave, charge density wave, singlet superconductivity, and metamagnetism, by changing the strengths of the SOIs and the crystallographic orientation of the QW. The interplay between the SOIs and Coulomb interaction leads to the anisotropic dc transport property of QW which provides us a possible way to detect the strengths of the RSOI and DSOI. PACS numbers: 73.63.Nm, 71.10.Pm, 73.23.-b, 71.70.Ej
Theoretical study of isolated dangling bonds, dangling bond wires and dangling bond clusters on H:Si(100)-(2$\times$1) surface

Hassan Raza

DOI: https://doi.org/10.1103/PhysRevB.76.045308

2006-11-16

Abstract:We theoretically study the electronic band structure of isolated unpaired and paired dangling bonds (DB), DB wires and DB clusters on H:Si(100)-(2$\times$1) surface using Extended Hückel Theory (EHT) and report their effect on the Si band gap. An isolated unpaired DB introduces a near-midgap state, whereas a paired DB leads to $\pi$ and $\pi^*$ states, similar to those introduced by an unpassivated asymmetric dimer (AD) Si(100)-(2$\times$1) surface. Such induced states have very small dispersion due to their isolation from the other states, which reside in conduction and valence band. On the other hand, the surface state induced due to an unpaired DB wire in the direction along the dimer row (referred to as $[\bar{1}10]$), has large dispersion due to the strong coupling between the adjacent DBs, being 3.84$Å$ apart. However, in the direction perpendicular to the dimer row (referred to as [110]), due to the reduced coupling between the DBs being 7.68$Å$ apart, the dispersion in the surface state is similar to that of an isolated unpaired DB. Apart from this, a paired DB wire in $[\bar{1}10]$ direction introduces $\pi$ and $\pi^*$ states similar to those of an AD surface and a paired DB wire in [110] direction exhibits surface states similar to those of an isolated paired DB, as expected. Besides this, we report the electronic structure of different DB clusters, which exhibit states inside the band gap that can be interpreted as superpositions of states due to unpaired and paired DBs.

Mesoscale and Nanoscale Physics
Elastic transport through dangling-bond silicon wires on H passivated Si(100)

Mikaël Kepenekian,Frederico D. Novaes,Roberto Robles,Serge Monturet,Hiroyo Kawai,Christian Joachim,Nicolás Lorente

DOI: https://doi.org/10.1088/0953-8984/25/2/025503

2012-06-11

Abstract:We evaluate the electron transmission through a dangling-bond wire on Si(100)-H (2x1). Finite wires are modelled by decoupling semi-infinite Si electrodes from the dangling-bond wire with passivating H atoms. The calculations are performed using density functional theory in a non-periodic geometry along the conduction direction. We also use Wannier functions to analyze our results and to build an effective tight-binding Hamiltonian that gives us enhanced insight in the electron scattering processes. We evaluate the transmission to the different solutions that are possible for the dangling-bond wires: Jahn-Teller distorted ones, as well as antiferromagnetic and ferromagnetic ones. The discretization of the electronic structure of the wires due to their finite size leads to interesting transmission properties that are fingerprints of the wire nature.

Materials Science
Energetics and stability of dangling-bond silicon wires on H passivated Si(100)

R Robles,M Kepenekian,S Monturet,C Joachim,N Lorente

DOI: https://doi.org/10.1088/0953-8984/24/44/445004

2012-09-28

Abstract:We evaluate the electronic, geometric and energetic properties of quasi 1D wires formed by dangling-bonds on Si(100)-H(2 × 1). The calculations are performed with density functional theory (DFT). Infinite wires are found to be insulating and Peierls distorted, however finite wires develop localized electronic states that can be of great use for atomic scale devices. The ground state solution of finite wires does not correspond to a geometrical distortion but rather to an antiferromagnetic ordering. For the stability of wires, the presence of abundant H atoms in nearby Si atoms can be a problem. We have evaluated the energy barriers for intradimer and intrarow diffusion, finding all of them about 1 eV or larger, even in the case where a H impurity is already sitting on the wire. These results are encouraging for using dangling-bond wires in future devices.
Understanding Spin Transport from Motion Insu(2)×u(1)fields

Pei-Qing Jin,You-Quan Li

DOI: https://doi.org/10.1103/physrevb.77.155304

IF: 3.7

2008-01-01

Physical Review B

Abstract:Starting from a continuum constituted by charged tops, we formulate the classical counterpart of a previously obtained covariant continuitylike equation for the spin current. Such a formulism provides an intuitive picture to elucidate the nonconservation of the spin current and to interpret the condition for the emergence of an infinite spin relaxation time. It also facilitates the discussion on the spin precession in a one-dimensional quantum wire with the Dresselhaus and Rashba spin-orbit couplings. Furthermore, we derive the diffusion equations for both the charge and spin densities and find that they couple to each other due to the Zitterbewegung.
Half-Metallic Silicon Nanowires: Multiple Surface Dangling Bonds and Nonmagnetic Doping

Zhuo Xu,Qing-Bo Yan,Qing-Rong Zheng,Gang Su

DOI: https://doi.org/10.1103/physrevb.80.081306

2009-01-01

Abstract:By means of first-principles density functional theory calculations, we find that hydrogen-passivated ultrathin silicon nanowires (SiNWs) along the [100] direction with symmetrical multiple surface dangling bonds (SDBs) and boron doping can have a half-metallic ground state with 100% spin polarization, where the half-metallicity is shown to be quite robust against external electric fields. Under the circumstances with various SDBs, the H-passivated SiNWs can also be ferromagnetic or antiferromagnetic semiconductors. The present study not only offers a possible route to engineer half-metallic SiNWs without containing magnetic atoms but also sheds light on manipulating spin-dependent properties of nanowires through surface passivation.
Topological States and Interplay Between Spin-Orbit and Zeeman Interactions in a Spinful Su-Schrieffer-Heeger Nanowire

Zhi-Hai Liu,O. Entin-Wohlman,A. Aharony,J. Q. You,H. Q. Xu

DOI: https://doi.org/10.1103/physrevb.104.085302

2021-01-01

Abstract:The interplay between the spin-orbit and Zeeman interactions acting on a spinful Su-Schrieffer-Heeger model is studied based on an InAs nanowire subjected to a periodic gate potential along the axial direction. It is shown that a nontrivial topological phase can be achieved by regulating the confining-potential configuration. In the absence of the Zeeman field, we prove that the topology of the chain is not affected by the Rashba spin-orbit interaction due to the persisting chiral symmetry. The energies of the edge modes can be manipulated by varying the magnitude and direction of the external magnetic field. Remarkably, the joint effect of the two spin-related interactions leads to novel edge states that appear in the gap formed by the anti-crossing of the bands of a finite spinful dimerized chain, and can be merged into the bulk states by tilting the magnetic-field direction.
Crystallographic plane tuning of charge and spin transport in semiconductor quantum wires.

Miao Wang,Kai Chang,L G Wang,Ning Dai,F M Peeters

DOI: https://doi.org/10.1088/0957-4484/20/36/365202

IF: 3.5

2009-01-01

Nanotechnology

Abstract:We investigate theoretically the charge and spin transport in quantum wires grown along different crystallographic planes in the presence of the Rashba spin-orbit interaction (RSOI) and the Dresselhaus spin-orbit interaction (DSOI). We find that changing the crystallographic planes leads to a variation of the anisotropy of the conductance due to a different interplay between the RSOI and DSOI, since the DSOI is induced by bulk inversion asymmetry, which is determined by crystallographic plane. This interplay depends sensitively on the crystallographic planes, and consequently leads to the anisotropic charge and spin transport in quantum wires embedded in different crystallographic planes.
Theory of atomic scale quantum dots in silicon: dangling bond quantum dots on silicon surface

Alain Delgado,Marek Korkusinski,Pawel Hawrylak

DOI: https://doi.org/10.48550/arXiv.1809.08376

2019-07-26

Abstract:We present here a theory and a computational tool, Silicon-{\sc Qnano}, to describe atomic scale quantum dots in Silicon. The methodology is applied to model dangling bond quantum dots (DBQDs) created on a passivated H:Si-(100)-(2$\times$1) surface by removal of a Hydrogen atom. The electronic properties of DBQD are computed by embedding it in a computational box of Silicon atoms. The surfaces of the computational box were constructed by using DFT as implemented in {\sc Abinit} program. The top layer was reconstructed by the formation of Si dimers passivated with H atoms while the bottom layer remained unreconstructed and fully saturated with H atoms. The computational box Hamiltonian was approximated by a tight-binding (TB) Hamiltonian by expanding the electron wave functions as a Linear Combination of Atomic Orbitals and fitting the bandstructure to {\it ab-initio} results. The parametrized TB Hamiltonian was used to model large finite Si(100) boxes (slabs) with number of atoms exceeding present capabilities of {\it ab-initio} calculations. The removal of one hydrogen atom from the reconstructed surface resulted in a DBQD state with wave function strongly localized around the Si atom and energy in the silicon bandgap. The DBQD could be charged with zero, one and two electrons. The Coulomb matrix elements were calculated and the charging energy of a two electron complex in a DBQD obtained.

Materials Science
Spin-Polarized Ballistic Transport In Diluted Magnetic Semiconductor Quantum Wire Systems

Kai Chang,F. Peeters

DOI: https://doi.org/10.1103/PhysRevB.68.205320

IF: 3.7

2003-01-01

Physical Review B

Abstract:The energy dispersion of an electron in a double quantum wire with a diluted magnetic semiconductor barrier in between is calculated. An external magnetic field modifies significantly the energy dispersion of the electron which is different for the two spin states. The conductance exhibits many interesting peaks and dips which are directly related to the energy dispersions of the different electron spin states. These phenomena are attributed to the interwell coupling which can be tuned by the magnetic field due to the s-d exchange interaction.
Spin-polarization-dependent quantum transport through a quantum-dot array

Rui Wang,Jianming Wang,J.-Q. Liang

DOI: https://doi.org/10.1016/j.physb.2006.04.001

2007-01-01

Abstract:Quantum transport through a quantum dot (QD) array coupled with two semi-infinite leads is investigated in terms of the tight-binding Hamilton which is spin-dependent due to external magnetic fields. By use of the transfer matrix method we found that both the reflection and transmission probabilities display complex spectra. The total and relative transmissions are also investigated.
Scanning tunneling spectroscopy reveals a silicon dangling bond charge state transition

Hatem Labidi,Marco Taucer,Mohammad Rashidi,Mohammad Koleini,Lucian Livadaru,Jason Pitters,Martin Cloutier,Mark Salomons,Robert A Wolkow

DOI: https://doi.org/10.1088/1367-2630/17/7/073023

2015-07-15

New Journal of Physics

Abstract:We report the study of single dangling bonds (DBs) on a hydrogen-terminated silicon (100) surface using a low-temperature scanning tunneling microscope. By investigating samples prepared with different annealing temperatures, we establish the critical role of subsurface arsenic dopants on the DB electronic properties. We show that when the near-surface concentration of dopants is depleted as a result of 1250 °C flash anneals, a single DB exhibits a sharp conduction step in its I(V) spectroscopy that is not due to a density of states effect but rather corresponds to a DB charge state transition. The voltage position of this transition is perfectly correlated with bias-dependent changes in the STM images of the DB at different charge states. Density functional theory calculations further highlight the role of subsurface dopants on DB properties by showing the influence of the DB-dopant distance on the DB state. We discuss possible theoretical models of electronic transport through the DB that could account for our experimental observations.

physics, multidisciplinary
Formation of quantum spin Hall state on Si surface and energy gap scaling with strength of spin orbit coupling

Miao Zhou,Wenmei Ming,Zheng Liu,Zhengfei Wang,Yugui Yao,Feng Liu

DOI: https://doi.org/10.1038/srep07102

IF: 4.6

2014-01-01

Scientific Reports

Abstract:For potential applications in spintronics and quantum computing, it is desirable to place a quantum spin Hall insulator [i.e., a 2D topological insulator (TI)] on a substrate while maintaining a large energy gap. Here, we demonstrate a unique approach to create the large-gap 2D TI state on a semiconductor surface, based on first-principles calculations and effective Hamiltonian analysis. We show that when heavy elements with strong spin orbit coupling (SOC) such as Bi and Pb atoms are deposited on a patterned H-Si(111) surface into a hexagonal lattice, they exhibit a 2D TI state with a large energy gap of ≥0.5 eV. The TI state arises from an intriguing substrate orbital filtering effect that selects a suitable orbital composition around the Fermi level, so that the system can be matched onto a four-band effective model Hamiltonian. Furthermore, it is found that within this model, the SOC gap does not increase monotonically with the increasing strength of SOC. These interesting results may shed new light in future design and fabrication of large-gap topological quantum states.

Spin-polarized quantum transport in Si dangling bond wires

A spin-polarised first principles study of short dangling bond wires on Si(001)

Spin transport in dangling-bond wires on doped H-passivated Si(100)

Spin-Dependent Transport Through A Quantum Wire on A Graphene Surface

Quantum Size Effects in Competing Charge and Spin Orderings of Dangling Bond Wires on Si(001)

Spin transport in quantum dot embedded in Aharonov–Bohm ring

Spin-Dependent Transport in Diluted-Magnetic-Semiconductor/Semiconductor Quantum Wires

Anisotropic transport in quantum wires embedded in (110) plane

Spin-orbit Interaction Induced Anisotropic Property in Interacting Quantum Wires

Theoretical study of isolated dangling bonds, dangling bond wires and dangling bond clusters on H:Si(100)-(2$\times$1) surface

Elastic transport through dangling-bond silicon wires on H passivated Si(100)

Energetics and stability of dangling-bond silicon wires on H passivated Si(100)

Understanding Spin Transport from Motion Insu(2)×u(1)fields

Half-Metallic Silicon Nanowires: Multiple Surface Dangling Bonds and Nonmagnetic Doping

Topological States and Interplay Between Spin-Orbit and Zeeman Interactions in a Spinful Su-Schrieffer-Heeger Nanowire

Crystallographic plane tuning of charge and spin transport in semiconductor quantum wires.

Theory of atomic scale quantum dots in silicon: dangling bond quantum dots on silicon surface

Spin-Polarized Ballistic Transport In Diluted Magnetic Semiconductor Quantum Wire Systems

Spin-polarization-dependent quantum transport through a quantum-dot array

Scanning tunneling spectroscopy reveals a silicon dangling bond charge state transition

Formation of quantum spin Hall state on Si surface and energy gap scaling with strength of spin orbit coupling