Abstract:The critical behavior of the order-disorder phase transition in the buckled dimer structure of the Si(001) surface is investigated both theoretically by means of first-principles calculations and experimentally by spot profile analysis low-energy electron diffraction (SPA-LEED). We use density functional theory (DFT) with three different functionals commonly used for Si to determine the coupling constants of an effective lattice Hamiltonian describing the dimer interactions. Experimentally, the phase transition from the low-temperature $c(4 {\times} 2)$- to the high-temperature $p(2 {\times} 1)$-reconstructed surface is followed through the intensity and width of the superstructure spots within the temperature range 78-400 K. Near the critical temperature $T_c = 190.6\,\mathrm{K}$, we observe universal critical behavior of spot intensities and correlation lengths which falls into the universality class of the two-dimensional (2D) Ising model. From the ratio of correlation lengths along and across the dimer rows we determine effective nearest-neighbor couplings of an anisotropic 2D Ising model, $J_\parallel = (-24.9 \pm 0.9_\mathrm{stat} \pm 1.3_\mathrm{sys})\,\mathrm{meV}$ and $J_\perp = (-0.8 \pm 0.1_\mathrm{stat})\,\mathrm{meV}$. We find that the experimentally determined coupling constants of the Ising model can be reconciled with those of the more complex lattice Hamiltonian from DFT when the critical behavior is of primary interest. The anisotropy of the interactions derived from the experimental data via the 2D Ising model is best matched by DFT calculations using the PBEsol functional. The trends in the calculated anisotropy are consistent with the surface stress anisotropy predicted by the DFT functionals, pointing towards the role of surface stress reduction as a driving force for establishing the $c(4 {\times} 2)$-reconstructed ground state.

{\pi}-Conjugation in Epitaxial Si(111)-($\sqrt3$$\times$$\sqrt3$) Surface: an Unconventional "Bamboo Hat" Bonding Geometry for Si

π-Conjugation in Epitaxial Si(111)-($\sqrt3$$\times$$\sqrt3$) Surface: an Unconventional "Bamboo Hat" Bonding Geometry for Si

Π Conjugation in the Epitaxial Si(111)- 3 × 3 Surface: Unconventional “bamboo Hat” Bonding Geometry for Si

Evidence for 2-D pi-bonded Surface Reconstructions on Si(111)

Delocalized Surface State in Epitaxial Si(111) Film with Spontaneous √3 × √3 Superstructure

Structure and Stability of Si(114)-(2x1)

Multilayered Silicene: the Bottom-Up Approach for a Weakly Relaxed Si(111) with Dirac Surface States.

Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

Double-pentagon silicon chains in a quasi-1D Si/Ag(001) surface alloy

Topological Dirac States Beyond Π Orbitals for Silicene on SiC(0001) Surface

Structural stability and electronic properties of Sr induced (5×4) reconstruction on Si(111) surface

La induced Si 3 trimer monolayer on Si(111) surface: an ab initio study

A Two-Dimensional CaSi Monolayer with Quasi-Planar Pentacoordinate Silicon.

A New Structural Model For The Sic(0001)(3 X 3) Surface Derived From First Principles Studies

Templated Growth of Quasi-One Dimensional Molecular Structures on Si(111)-(4×1)–In Surface

Silicene vs. ordered 2D silicide: the atomic and electronic structure of the Si-$(\sqrt{19}\times\sqrt{19})R23.4^{\circ}$/Pt(111) surface reconstruction

Structural Tristability And Deep Dirac States In Bilayer Silicene On Ag(111) Surfaces

Electronic States of Si(100) Reconstructed Surfaces

Lanthanum-induced Quasi-One-dimensional Reconstructions on Si(111)

Strain-induced structure transformations on Si(111) and Ge(111) surfaces: a combined density-functional and scannning tunnneling microscopy report

Critical behavior of the dimerized Si(001) surface: Continuous order-disorder phase transition in the two-dimensional Ising universality class