Dangling Bond Electronic State on an InP(¯111) Surface

XY HOU,GS DONG,XM DING,X WANG

DOI: https://doi.org/10.1016/s0039-6028(87)80339-4

IF: 1.9

1987-01-01

Surface Science

Abstract:The energy dispersion relation of the surface dangling bond state on a clean InP(¯111) surface has been measured by angle-resolved photoemission. The dispersion curve along the ¯Γ¯X direction is identical with those along the ¯Γ¯L direction in the Brillouin zone, and both have 1×1 periodicity. Under excitation by an s-polarized incident wave, the surface state peak vanishes in UPS; this implies that the dangling bonds are perpendicular to the surface and might be related to surface phosphorus atoms. A theoretical calculation based upon a slab model and the extended Hückel theory agreed well with the experimental result if a surface atomic structure with the outmost four layers displaced from their ordinary positions is postulated. In an optimal situation, the displacements take the following values: δ1(P)=0.1 Å, δ2(In)=−0.3 Å, δ3(P)=0.2 Å and δ4(In)=−0.1 Å, where a positive sign represents an outward displacement, a negative sign means an inward displacement.