Abstract:Parabolic IV-VI multiple-quantum well structures were grown on BaF2(111) substrates by molecular beam epitaxy and characterized by differential Fourier transform infrared transmission spectroscopy. To reduce unwanted Fabry-Perot interference fringes, the top surface of the parabolic MQW samples was coated with an antireflection film enabling unambiguous observation of subband transitions without superimposed interference fringes. Up to six principle quantized electron and hole transitions were observed. In contrast to III-V quantum well systems, the "forbidden" Deltan=2 quantum transitions are not observed in the IV-VI parabolic wells. Compared with the strain effect, the quantum size effect dominates the splitting of the degeneracy of the normal and oblique valleys at the L-point in the Brillouin zone. Intervalley splitting energies and the spacings of the principle energy levels in the parabolic wells allowed determination of the deformation potential constants for PbSe, D-d=6.1 eV and D-u=-1.3 eV. From the fitting to the high-quantized energy levels observed in the differential transmission spectra, the nonparabolicity parameters for conduction and valence bands of PbSe are determined to be 1.9x10(-15) cm(2).

Quasi-Particle Surface Band-Structure and Photoelectric Threshold of Ge(111)-2x1

Quasiparticle Surface Band Structure and Photoelectric Threshold of Ge(111)-2×1

Quasiparticle Properties of Ge(111)-2 Times 1 Surface

Quasiparticle Intepretation of Photoemission Spectra and Optical Properties of GaAs(110)

Self-energy Effects on the Surface-State Energies of H-Si(111)1 X 1.

Electronic Band Structure of Epitaxial PbTe (111) Thin Films Observed by Angle-Resolved Photoemission Spectroscopy

Atomic Structures of the Ge/Si(113)-(2 X 2) Surface.

Atomic Structures Of The Ge/Si(113)-(2x2) Surface

Stability Of The Bi2se3(111) Topological State: Electron-Phonon And Electron-Defect Scattering

The geometry structure and electronic states of chlorine on Cu(111) surface

Experimental Determination of Deformation Potentials and Band Nonparabolicity Parameters for PbSe

Formation of a quantum spin Hall state on a Ge(111) surface

Study Of The Na-Si(111) 3x1 Interface Using Core-Level Photoemission Spectroscopy

Strain-induced structure transformations on Si(111) and Ge(111) surfaces: a combined density-functional and scannning tunnneling microscopy report

Structural Stability of the Ge/Si(1 1 3)-2×2 Surface

Electronic structure of the c(4 x 2) reconstructed Ge(001) surface

Interface-Induced Complex Electronic Interference Structures in Ag Films on Ge(111)

Surface States On A Topologically Nontrivial Semimetal: The Case Of Sb(110)

Electronic-Structure And Its Dependence On Local Order For H/Si(111)-(1x1) Surfaces

Atomic Structure of the Ge(313) Surface

Atomic Structure of the Ge(101) Surface