Abstract:Using first-principles density functional theory (DFT) hybrid functional calculations, we demonstrate the formation of a quantum spin Hall (QSH) state on a Ge(111) surface. We show that a 1/3 monolayer (ML) Cl-covered Ge(111) surface offers an ideal template for metal, such as Bi, deposition into a stable hexagonal overlayer 2D lattice, which we refer to as Bi@Cl-Ge(111). The band structure and band topology of Bi@Cl-Ge(111) are analyzed with respect to the effect of spin-orbit coupling (SOC). The Bi@Cl-Ge(111) exhibits a QSH state with a band gap of 0.54 eV. In contrast, the Au@Cl-Ge(111) is found to be a trivial semiconducting surface. The Ge(111) substrate acts as an orbital filter to critically select the orbital composition around the Fermi level. Our findings offer another possible system for experimental exploration of the growth of 2D topological materials on conventional semiconductor substrates, where the 2D overlayer is atomically bonded to, but electronically decoupled from, the underlying substrate, exhibiting an isolated topological quantum state inside the substrate band gap.

Quasiparticle Properties of Ge(111)-2 Times 1 Surface

Quasiparticle Surface Band Structure and Photoelectric Threshold of Ge(111)-2×1

Quasi-Particle Surface Band-Structure and Photoelectric Threshold of Ge(111)-2x1

Quasiparticle Intepretation of Photoemission Spectra and Optical Properties of GaAs(110)

Self-energy Effects on the Surface-State Energies of H-Si(111)1 X 1.

Atomic Structures Of The Ge/Si(113)-(2x2) Surface

Electronic structure of the c(4 x 2) reconstructed Ge(001) surface

Atomic Structures of the Ge/Si(113)-(2 X 2) Surface.

Atomic Structure of the Ge(313) Surface

Stability Of The Bi2se3(111) Topological State: Electron-Phonon And Electron-Defect Scattering

Atomic Structure of the Ge(101) Surface

Surface Structure of the (3x1) and (3x2) Reconstructions of Ge(113)

Formation of a quantum spin Hall state on a Ge(111) surface

Surface States On A Topologically Nontrivial Semimetal: The Case Of Sb(110)

Chemisorption of Group-Iii Metals on the (111) Surface of Group-Iv Semiconductors: In/Ge(111)

Structural Stability of the Ge/Si(1 1 3)-2×2 Surface

Triangular Mott-Hubbard Insulator Phases of Sn/Si(111) and Sn/Ge(111) Surfaces

The geometry structure and electronic states of chlorine on Cu(111) surface

Migration of Subsurface Self-Interstitial Atoms of the Ge(113) Surface and the Energy Barrier

Study Of The Na-Si(111) 3x1 Interface Using Core-Level Photoemission Spectroscopy

Temperature dependence of the Ge(111) surface electronic structure probed by inelastic H atom scattering