Abstract:Abstract Germanium selenide monolayer is promising in photoelectric applications for its natural p‐type semiconductor and complicated band structures. Basic experimental investigations of few‐to‐monolayer germanium selenide are still absent; major scientific challenge is to develop of techniques for controllably thinned monolayers. In this study laser thinned monolayer germanium selenide on SiO 2 /Si substrates is demonstrated. A broad photoluminescence spectrum with eight continues peaks is observed from visible to infrared wavebands centered at ≈589, 655, 737, 830, 1034, 1178, 1314, and 1456 nm, respectively. First‐principle calculations based on density functional theory illuminate the band structures of few‐to‐monolayer germanium selenide. Photoluminescence investigation combined with first‐principle calculations indicates that the indirect to direct bandgap transition happens at few layers of N = 3. Current–voltage and photoresponse characteristics of monolayer based devices show 3.3 times the photosensitivity and much faster falling edges compared with those of the pristine nanosheet based devices. The present results provide useful insight into deep understanding of thickness dependent performances of germanium selenide monocrystalline.

Quasiparticle Surface Band Structure and Photoelectric Threshold of Ge(111)-2×1

Quasi-Particle Surface Band-Structure and Photoelectric Threshold of Ge(111)-2x1

Quasiparticle Properties of Ge(111)-2 Times 1 Surface

Quasiparticle Intepretation of Photoemission Spectra and Optical Properties of GaAs(110)

Electronic structure of Ge/SixSnyGe1−x−y quantum dots

Electronic Band Structure of Epitaxial PbTe (111) Thin Films Observed by Angle-Resolved Photoemission Spectroscopy

Self-energy Effects on the Surface-State Energies of H-Si(111)1 X 1.

Experimental Determination of Deformation Potentials and Band Nonparabolicity Parameters for PbSe

Stability Of The Bi2se3(111) Topological State: Electron-Phonon And Electron-Defect Scattering

Study Of The Na-Si(111) 3x1 Interface Using Core-Level Photoemission Spectroscopy

The geometry structure and electronic states of chlorine on Cu(111) surface

Atomic Structures of the Ge/Si(113)-(2 X 2) Surface.

Atomic Structures Of The Ge/Si(113)-(2x2) Surface

Formation of a quantum spin Hall state on a Ge(111) surface

Interface-Induced Complex Electronic Interference Structures in Ag Films on Ge(111)

Strain-induced structure transformations on Si(111) and Ge(111) surfaces: a combined density-functional and scannning tunnneling microscopy report

Band Structure and Photoelectric Characterization of GeSe Monolayers

Experimental Determination of Valence Band Offset at Pbte/Ge(100) Interface by Synchrotron Radiation Photoelectron Spectroscopy

Electronic structure of the c(4 x 2) reconstructed Ge(001) surface

Ag ∕ Pb Te ( 111 ) Interface Behavior Studied by Photoemission Spectroscopy

S 1 Optical Characterizations of Surface States in Hybrid Lead-Halide Perovskites