Abstract:We present a joint experimental and theoretical determination of structures of Ag adatoms on the Ge(111) surface using low energy electron diffraction, low energy electron microscopy, scanning tunneling microscopy, and density functional theory-based calculations, as functions of coverages and temperature. Experimentally for clean Ge(111), c(2X8) and (2X1) phases occur, while Ag overlayers cause (4X4), (V3XV3)R30 and (3X1) surface structural phases. The dependence of the growth behavior of these different phases was examined as a function of temperature, Ag deposition rate and coverage, substrate step density, and history of temperature cycling. First-principles calculations of the electronic and geometric structures and vibrational dynamics show the Ge(111)-c(2X8) configuration with Ge adatoms adsorbed on three-fold hollow (T4) sites to be the energetically most favored phase of the Ge(111) surface, among unreconstructed Ge(111), reconstructed Ge(111)-2X1, and Ge(111)-c(2X8) structures. The Ge(111)-Ag(3X1) overlayer of the system has Ge atoms forming a honeycomb chain on a missing top layer reconstructed surface, with metal at 1/3 ML coverage in channel. The Ge (111)-Ag(V3XV3)R30 overlayer contains one monolayer Ag forming inequivalent Ag triangles in a surface unit cell on the missing top layer reconstructed Ge(111) surface. The Ge(111)-Ag(4X4) overlayer formed at low Ag coverage contains two triangular subunits at different heights: one with six Ag adatoms and the other with three Ge adatoms on the intact double layer Ge(111) surface. The temperature and coverage dependent surface phase diagram, obtained by minimizing the surface free energy, captures the main features of the experimental phase diagram.

Chemisorption of Group-Iii Metals on the (111) Surface of Group-Iv Semiconductors: In/Ge(111)

Surfaces and Interfaces of Group IV Semiconductors

Atomic structure of the Ge(112)-(4 x 1) - In reconstruction

ATOMIC STRUCTURE OF THE Ge(112)-(4 × 1)-In RECONSTRUCTION

Surface reconstruction and faceting of group IIIIV(113) systems — common characteristics of the stable surface structures

Surface Structure of the (3x1) and (3x2) Reconstructions of Ge(113)

Study Of The Na-Si(111) 3x1 Interface Using Core-Level Photoemission Spectroscopy

Atomic structure of the Ge(001)-(7x5.5)-Ga surface

Interface Formation Of Ge/Znse(100) And Ge/Zns(111) Heterojunctions Studied By Synchrotron Radiation Photoemission

Electronic Structure and Trilayer Growth of Indium Films on Si(111): a Photoemission Study

A Comparative Study of the Thermal Stability of the (103) Surface of Group-Iii-metal/group-iv-semiconductor Systems

Interaction in A Chemisorption System of the Submonolayer Cs on the Inp(110) Substrate

Atomic Structure of the Ge(313) Surface

Atomic-Scale Study of Ge-Induced Incommensurate Phases on Si(111)

The Study of Ag Adsorbed on Ge(111) 2×1 Surfaces Using First-Principles Calculations

Strain-induced structure transformations on Si(111) and Ge(111) surfaces: a combined density-functional and scannning tunnneling microscopy report

Study of Si and Ge growth on Si(100) surface

Surface Reconstruction of Germanium: Hydrogen Intercalation and Graphene Protection

Electron Energy Loss Spectroscopy, Low Energy Electron Diffraction, and Auger Electron Spectroscopy Study of Indium Overlayers on Si(111) and Si(100) Surfaces

Sub-monolayer structures of Ag overlayers on Ge(111): experimental observations and first-principles study

Atomic Structures of the Ge/Si(113)-(2 X 2) Surface.