Abstract:The negative electron affinity (NEA) InxGa1-xAs photocathodes are of particular importance as a fundamental building block for the near infrared sensitivity image intensifier. However, a comprehensive understanding is still lacking of the activation mechanism in order to form NEA state. Here we perform a detailed theoretical research on the early stage of Cs adsorption on the As-rich beta(2)(2 x 4) reconstruction of In0.53Ga0.47As (0 0 1) surface by using first-principles calculations within the framework of density functional theory. Adsorption energies, work functions, dipole moments, band structures and density of states of In0.53Ga0.47As (0 0 1) beta(2) (2 x 4) surface corresponding to different Cs coverages are investigated. Calculation results indicate that Cs adsorption on In0.53Ga0.47As (0 0 1) beta(2)(2 x 4) surface becomes more and more difficult as Cs coverage increases. Cs-induced [Csn+-In-0(.)53 Ga0.47Asn-] dipoles are perpendicular to the substrate, which will decrease the work function and make the electrons easier to escape to the vacuum. However, excessive Cs adatoms will lead to the dipoles repelling each other, and some electrons return back to the substrate due to the electrostatic depolarization, resulting in the appearance of "Cs-kill" phenomenon and the work function rises again. Consequently, the optimal Cs coverage corresponding to the peak value of the InGaAs photocurrent should be considered in order to prevent the absence of the "Cs-kill" phenomenon. Meanwhile, there emerge new valence bands induced by Cs adsorption ranging from -25 eV to -22 eV and from -13 eV to 9 eV. Due to the combined effect of Cs 5s and 5p state electrons, the Fermi level moves into the conduction band, leading to the adsorption models showing more metallic properties.

Interaction in A Chemisorption System of the Submonolayer Cs on the Inp(110) Substrate

Nonmetallic Behavior of Cs/GaAs(110)

Electronic Structure of Sb on Inp(110) Surface Studied Theoretically

Theoretical-Study of Cn Chemisorbed on the Pd(111) Surface

INTERACTION BETWEEN Li ATOMS ON Si(100)2×1 AND PHASE CHANGE OF SURFACE STRUCTURE

Study Of The Na-Si(111) 3x1 Interface Using Core-Level Photoemission Spectroscopy

Chemisorption of Group-Iii Metals on the (111) Surface of Group-Iv Semiconductors: In/Ge(111)

STUDIES OF Na ADSORBED ORDERLY AND DISORDERLY ON Si(111) SURFACE USING PES

Study on the interface between the organic and inorganic semiconductors

Early Stage of Cs Activation Mechanism for In0.53Ga0.47As (0 0 1) Β2 (2 × 4) Surfaces: Insights from First-Principles Calculations

Electronic Structure and Trilayer Growth of Indium Films on Si(111): a Photoemission Study

Geometric and Electronic Structures at the Interface Between Iron Phthalocyanine and Si (110)

Pits and Adatoms at the Interface of 1-Ml C-84/Ag (111)

Adsorption Behavior of Iron Phthalocyanine on A Ag(110) Surface

Interaction, Electron-Transfer, And Work Function Of A Chemisorbed Alkali-Metal Submonolayer On A W(001) Surface

Studies on adsorption system of carbon monoxide on Cs/Ru(1010) surface by using synchrotron radiation

Electronic and Geometric Structure of Cs on Graphite (0001)

Atomic and Electronic Structures of Submonolayer in on Cu(111)

Insitu Electron-Spectroscopy Studies Of Interaction Between P And Gaas(100) Surface

Effect of the Surface States of Different Transition-Metal Substrates on a Cs Overlayer.

Adsorption of Indium on a InAs wetting layer deposited on the GaAs(001) surface