Abstract:MD simulations were conducted to study the self-interstitial migration in zirconium. By defining the crystal lattice point, at which more than one atom fall in the Wigner-Seitz cell of the lattice point, for the location of interstitial atoms (LSIA), three types of events were identified for LSIA migration: the jump remaining in one <112_0> direction (ILJ), the jump from one <112_0> to another <112_0> direction in the same basal plane (OLJ) and the jump from one basal plane to an adjacent basal plane (OPJ). The occurrence frequencies of the three types were calculated. ILJ was found to be the dominant event in the temperature range (300K to 1200K), but the occurrence frequencies of OLJ and OPJ increased with increasing temperature. Although the three types of jumps may not follow Brownian and Arrhenius behavior, on the whole, the migration of the LSIAs tend to be Brownian-like. Moreover, the migration trajectories of LSAs in the hcp basal-plane are not what are observed if only conventional one- or two-dimensional migrations exist; rather, they exhibit the feature we call fraction-dimensional. Namely, the trajectories are composed of line segments in <112_0> directions with the average length of the line segments varying with the temperature. Using MC simulations, the potential kinetic impacts of the fraction-dimensional migration, measured by the average number of lattice sites visited per jump event n_SPE was analyzed. The significant differences between the n_SPE value of the fraction-dimensional migration and those of the conventional one- and two-dimensional migrations suggest that the conventional diffusion coefficient, which cannot reflect the feature of fraction-dimensional migration, cannot give an accurate description of the underlying kinetics of SIAs in Zr.

Migration of Subsurface Self-Interstitial Atoms of the Ge(113) Surface and the Energy Barrier

In Situ Atomistic Observation of Grain Boundary Migration Subjected to Defect Interaction

The Migration of a Si Atom Adsorbed on the Si(100)-2 × 1 Surface

Adatom Diffusion On Ge(111) And The Corresponding Activation Energy Barrier

Measurement of Ehrlich-Schwoebel barrier contribution to the self-organized formation of ordered surface patterns on Ge(001)

Ge Migration Effect of Si/Ge-N/Si(100) Heterostructure Films Probed by Grazing Incidence Fluorescence X-Ray Absorption Fine Structure

Investigation on Ge Surface Diffusion Via Growing Ge Quantum Dots on Top of Si Pillars

Strain-induced structure transformations on Si(111) and Ge(111) surfaces: a combined density-functional and scannning tunnneling microscopy report

First-principles Study of Adsorption and Diffusion on Ge/Si(001)-(2×8) and Ge/Si(105)-(1×2) Surfaces

Precursor Mechanism for Interaction of Bulk Interstitial Atoms with Si(100)

On the fraction-dimension migration of self-interstitials in zirconium

Chemisorption of Group-Iii Metals on the (111) Surface of Group-Iv Semiconductors: In/Ge(111)

CONCERTED MOTION OF Ge ADATOMS ON THE MODERATE TEMPERATURE PHASE OF THE Ge(111) SURFACE

Comparison of Different Scattering Mechanisms in the Ge (111), (110), and (100) Inversion Layers of Nmosfets with Si Nmosfets under High Normal Electric Fields

Atomic Structures of the Ge/Si(113)-(2 X 2) Surface.

Atomic Structures Of The Ge/Si(113)-(2x2) Surface

Impact of strain and surface reconstruction on long-range diffusion of Ge atoms on Ge(111) surface

Quasiparticle Properties of Ge(111)-2 Times 1 Surface

Self-Diffusion of Ge in Amorphous Ge x Si1- x Films Studied In Situ by Neutron Reflectometry

Ge/Si Interdiffusion In The Gesi Dots And Wetting Layers

Strains in Si Substrate Induced by Formation of Ge Islands