Abstract:Polysilicon serves as a primary raw material in the production of solar cells and semiconductors. However, its impurity content, particularly boron, poses significant challenges during the chemical vapor deposition (CVD) process. Therefore, it is essential to investigate the behavior of boron impurities during CVD. In this study, we conducted first-principles calculations to explore the adsorption behavior and deposition mechanism of boron-containing gases (BCl3, BHCl2, B2H6) on the Si(100) surface. We considered different adsorption sites and performed a systematic analysis of various adsorption systems' adsorption energy, charge transfer, and electronic properties. Our findings indicate that BCl3, BHCl2, and B2H6 molecules undergo dissociative chemisorption at specific adsorption sites. Moreover, charge transfer analysis confirms that each of these adsorbed molecules functions as an electron acceptor. Subsequent analyses, including total charge density (TCD), charge density difference (CDD), total density of states (TDOS), and projected density of states (PDOS), collectively underscore the robust electronic interactions between the gaseous molecules and the Si(100) surface. Through the computation of transition states and energy barriers across three potential reaction pathways, we identify a predominant sequence: BCl3 -> BCl2+Cl -> BCl+Cl -> B+Cl, that governs boron impurity formation on the Si(100) surface during CVD. Our work elucidates the underlying microscopic mechanisms of boron-containing gas adsorption and deposition in the CVD context.

Precursor Mechanism for Interaction of Bulk Interstitial Atoms with Si(100)

INTERACTION BETWEEN Li ATOMS ON Si(100)2×1 AND PHASE CHANGE OF SURFACE STRUCTURE

Physical model for surface annihilation of silicon interstitials during annealing

Theoretical Investigation of the Ammonia Adsorption Process on Si(100)-2×1 Surface

Atomistic modeling of diffusion processes at Al(Si)/Si(111) interphase boundaries obtained by vapor deposition

A First-Principles Investigation into the Adsorption Behavior and Deposition Mechanism of Boron-Containing Gases on Si(100) Surfaces During Chemical Vapor Deposition

Dimer-Flipping-Assisted Diffusion on A Si(001) Surface

Positron annihilation spectroscopy of the interface between nanocrystalline Si and SiO2

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

MOLECULAR DYNAMICS SIMULATIONS OF SINGLE Si ADATOM DIFFUSION ON THE Si(001) SURFACE AND ACROSS SINGLE-LAYER Si(001) STEPS

Existence probabilities of single Si atoms diffusing in Si(111)-(7 × 7) half-unit cells at room temperature

ATOMIC LEVEL STUDIES OF THE DYNAMICS AND DYNAMICAL BEHAVIOR OF SOLID SURFACES

Fast Diffusion Mechanism of Silicon Tri-interstitial Defects

First-principles Study of Adsorption and Diffusion on Ge/Si(001)-(2×8) and Ge/Si(105)-(1×2) Surfaces

Coupled surface and bulk diffusion in crystals

Release behavior of an interstitial helium atom from 3 C -SiC(100) subsurface: A first-principles study

An ab initio approach to anisotropic alloying into the Si(001) surface

Atomistic modeling of metal-nonmetal interphase boundary diffusion

Quantification of Interfacial Voids Using Positron Annihilation Spectroscopy for Mechanism Study on SiCN Bonding and SiN Bonding

The Role of Surface Annihilation in Annealing Investigated by Atomic Model Simulation

Mechanisms for NH3 Decomposition on Si(100)-(2 X 1) Surface: a Quantum Chemical Cluster Model Study.