Abstract:The critical behavior of the order-disorder phase transition in the buckled dimer structure of the Si(001) surface is investigated both theoretically by means of first-principles calculations and experimentally by spot profile analysis low-energy electron diffraction (SPA-LEED). We use density functional theory (DFT) with three different functionals commonly used for Si to determine the coupling constants of an effective lattice Hamiltonian describing the dimer interactions. Experimentally, the phase transition from the low-temperature $c(4 {\times} 2)$- to the high-temperature $p(2 {\times} 1)$-reconstructed surface is followed through the intensity and width of the superstructure spots within the temperature range 78-400 K. Near the critical temperature $T_c = 190.6\,\mathrm{K}$, we observe universal critical behavior of spot intensities and correlation lengths which falls into the universality class of the two-dimensional (2D) Ising model. From the ratio of correlation lengths along and across the dimer rows we determine effective nearest-neighbor couplings of an anisotropic 2D Ising model, $J_\parallel = (-24.9 \pm 0.9_\mathrm{stat} \pm 1.3_\mathrm{sys})\,\mathrm{meV}$ and $J_\perp = (-0.8 \pm 0.1_\mathrm{stat})\,\mathrm{meV}$. We find that the experimentally determined coupling constants of the Ising model can be reconciled with those of the more complex lattice Hamiltonian from DFT when the critical behavior is of primary interest. The anisotropy of the interactions derived from the experimental data via the 2D Ising model is best matched by DFT calculations using the PBEsol functional. The trends in the calculated anisotropy are consistent with the surface stress anisotropy predicted by the DFT functionals, pointing towards the role of surface stress reduction as a driving force for establishing the $c(4 {\times} 2)$-reconstructed ground state.

Dimer-Flipping-Assisted Diffusion on A Si(001) Surface

MOLECULAR DYNAMICS SIMULATIONS OF SINGLE Si ADATOM DIFFUSION ON THE Si(001) SURFACE AND ACROSS SINGLE-LAYER Si(001) STEPS

First-principles Study of Adsorption and Diffusion on Ge/Si(001)-(2×8) and Ge/Si(105)-(1×2) Surfaces

Ab initio study of subsurface diffusion of Cu on the H-passivated Si(001) surface

Structural and Electronic Properties of Ge-Si, Sn-Si, and Pb-Si Dimers on Si(001) from Density-Functional Calculations

Self-Diffusion Mechanisms of Adatom on Al (001), (011) and (111) Surfaces

Existence probabilities of single Si atoms diffusing in Si(111)-(7 × 7) half-unit cells at room temperature

Precursor Mechanism for Interaction of Bulk Interstitial Atoms with Si(100)

Adsorption and Diffusion of Silver on SiC(111) and ZrC(111) Surfaces: A First Principles Study

Theoretical Investigation of the Ammonia Adsorption Process on Si(100)-2×1 Surface

Atomistic modeling of diffusion processes at Al(Si)/Si(111) interphase boundaries obtained by vapor deposition

Clarification of Au dimer adsorption sites on Si (111)-7×7 surface by AFM/KPFM

Systematical Study of Dimer Diffusion on Metal Fcc(001) Surfaces

INTERACTION BETWEEN Li ATOMS ON Si(100)2×1 AND PHASE CHANGE OF SURFACE STRUCTURE

Study Of The Na-Si(111) 3x1 Interface Using Core-Level Photoemission Spectroscopy

Adatom Self-Diffusion on Pt (100) Surface by an Ad-Dimer Migrating

A Density Functional Theory Computational Study of Adsorption of Di-Meta-Cyano Azobenzene Molecules on Si (111) Surfaces

Exchange Rotation Mechanism For Dimer Diffusion On Metal Fcc (001) Surfaces

Simulation of Dimer Diffusion on Metal Fcc (001) Surfaces by Molecular Dynamics

Fast Diffusion Mechanism of Silicon Tri-interstitial Defects

Critical behavior of the dimerized Si(001) surface: Continuous order-disorder phase transition in the two-dimensional Ising universality class