Abstract:Low-temperature growth of diamond films using the chemical vapor deposition (CVD) method is not so widely reported and its initial periods of nucleation and growth phenomenon are of particular interest to the researchers. Four sets of substrates were selected for growing diamond films using linear antenna microwave plasma-enhanced CVD (LA-MPCVD). Among them, silicon and sapphire substrates were pre-treated with detonation nanodiamond (DND) seeds before diamond growth, for enhancement of its nucleation. Carbon nanotube (CNT) films on Si substrates were also used as another template for LA-MPCVD diamond growth. To enhance diamond nucleation during CVD growth, some of the CNT films were again pre-treated by the electrophoretic deposition (EPD) of diamond nanoparticles. All these substrates were then put inside the LA-MPCVD chamber to grow diamond films under variable processing conditions. Microwave input powers (1100–2800 W), input power modes (pulse or continuous), antenna-to-stage distances (5–6.5 cm), process gas recipes (with or without CO2), methane gas percentages (3%–5%), and deposition times (11–120 min) were altered to investigate their effect on the growth of diamond film on the pre-treated substrates. The substrate temperatures were found to vary from as low as 170 °C to a maximum of 307 °C during the alteration of the different processing parameters. Contrary to the conventional MPCVD, it was observed that during the first hour of LA-MPCVD diamond growth, DND seeds and the nucleating structures do not coalesce together to make a continuous film. Deposition time was the most critical factor in fully covering the substrate surfaces with diamond film, since the substrate temperature could not become stable during the first hour of LA-MPCVD. CNTs were found to be oxidized rapidly under LA-MPCVD plasma conditions; therefore, a CO2-free process gas recipe was used to reduce CNT burning. Moreover, EPD-coated CNTs were found to be less oxidized by the LACVD plasma during diamond growth.

Vertical-Substrate MPCVD Epitaxial Nanodiamond Growth

Vertical-substrate Epitaxial Growth of Single-Crystal Diamond by Microwave Plasma-Assisted Chemical Vapor Deposition

High quality CVD single crystal diamonds grown on nanorods patterned diamond seed

Recent progress in homoepitaxial single-crystal diamond growth via MPCVD

Recent advances in high-growth rate single-crystal CVD diamond

Ultrathin Nanocrystalline Diamond Films with Silicon Vacancy Color Centers via Seeding by 2 nm Detonation Nanodiamonds

Large Area Single-Crystal Diamond Synthesis by 915 MHz Microwave Plasma-Assisted Chemical Vapor Deposition

Optimization Design of MPCVD Single Crystal Diamond Growth Based on Plasma Diagnostics

Early Periods of Low-Temperature Linear Antenna CVD Nucleation and Growth Study of Nanocrystalline Diamond Films

Progress of Diamond Substrate Development

Vapor phase nucleation and sedimentation of dispersed nanodiamonds by MPCVD

Very high growth rate chemical vapor deposition of single-crystal diamond.

Tailoring of Nitrogen-Vacancy Colour Centers in Diamond Epilayers by in Situ Sulfur and Nitrogen Anion Engineering

Homoepitaxy Growth of Single Crystal Diamond under 300 torr Pressure in the MPCVD System

Optimizing MPCVD Systems for Diamond Growth Through Advanced Microwave Transmission Theory

NV-doped microstructures with preferential orientation by growth on heteroepitaxial diamond

Fast, Efficient Tailoring Growth of Nanocrystalline Diamond Films by Fine-Tuning of Gas-Phase Composition Using Microwave Plasma Chemical Vapor Deposition

Nanocrystalline Diamond Film Grown by Pulsed Linear Antenna Microwave CVD

Fabrication of Diamond Nanoneedle Arrays Containing High‐Brightness Silicon‐Vacancy Centers

Multiple Enlarged Growth of Single Crystal Diamond by MPCVD with PCD-rimless Top Surface

Silicon substrate surface modification with nanodiamonds for CVD-synthesis of polycrystalline diamond